Qorvo 27.5 - 31 GHz, 14 Watt GaN Amplifier QPA2211D

Description
Qorvo's QPA2211D is a Ka-band power amplifier fabricated on Qorvo's 0.15um GaN on SiC process (QGaN15). Operating between 27.5 and 31 GHz, it achieves 5 W linear power with −25 dBc intermodulation distortion products and 26 dB small signal gain. Saturated output power is 14 W with power-added efficiency of 34%. QPA2211D is ideally suited to support satellite communications and 5G infrastructure. To simplify system integration, the QPA2211D is fully matched to 50 ohms with integrated DC blocking caps on both I/O ports. The QPA2211D is 100% DC and RF tested on-wafer to ensure compliance to electrical specifications. Lead-free and RoHS compliant. For additional information on GaN thermal performance refer to the following application note and video.
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Description
Qorvo's QPA2211D is a Ka-band power amplifier fabricated on Qorvo's 0.15um GaN on SiC process (QGaN15). Operating between 27.5 and 31 GHz, it achieves 5 W linear power with −25 dBc intermodulation distortion products and 26 dB small signal gain. Saturated output power is 14 W with power-added efficiency of 34%. QPA2211D is ideally suited to support satellite communications and 5G infrastructure. To simplify system integration, the QPA2211D is fully matched to 50 ohms with integrated DC blocking caps on both I/O ports. The QPA2211D is 100% DC and RF tested on-wafer to ensure compliance to electrical specifications. Lead-free and RoHS compliant. For additional information on GaN thermal performance refer to the following application note and video.
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Suppliers

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27.5 - 31 GHz, 14 Watt GaN Amplifier - QPA2211D - Qorvo
Greensboro, NC, United States
27.5 - 31 GHz, 14 Watt GaN Amplifier
QPA2211D
27.5 - 31 GHz, 14 Watt GaN Amplifier QPA2211D
Qorvo's QPA2211D is a Ka-band power amplifier fabricated on Qorvo's 0.15um GaN on SiC process (QGaN15). Operating between 27.5 and 31 GHz, it achieves 5 W linear power with −25 dBc intermodulation distortion products and 26 dB small signal gain. Saturated output power is 14 W with power-added efficiency of 34%. QPA2211D is ideally suited to support satellite communications and 5G infrastructure. To simplify system integration, the QPA2211D is fully matched to 50 ohms with integrated DC blocking caps on both I/O ports. The QPA2211D is 100% DC and RF tested on-wafer to ensure compliance to electrical specifications. Lead-free and RoHS compliant. For additional information on GaN thermal performance refer to the following application note and video.

Qorvo's QPA2211D is a Ka-band power amplifier fabricated on Qorvo's 0.15um GaN on SiC process (QGaN15). Operating between 27.5 and 31 GHz, it achieves 5 W linear power with −25 dBc intermodulation distortion products and 26 dB small signal gain. Saturated output power is 14 W with power-added efficiency of 34%.
QPA2211D is ideally suited to support satellite communications and 5G infrastructure.
To simplify system integration, the QPA2211D is fully matched to 50 ohms with integrated DC blocking caps on both I/O ports.
The QPA2211D is 100% DC and RF tested on-wafer to ensure compliance to electrical specifications.
Lead-free and RoHS compliant.

For additional information on GaN thermal performance refer to the following application note and video.

Supplier's Site Datasheet
RF Amplifiers - 2312-QPA2211D-ND - DigiKey
Thief River Falls, MN, United States
RF Amplifiers
2312-QPA2211D-ND
RF Amplifiers 2312-QPA2211D-ND
27.5-31 GHZ, 14 W GAN AMP

27.5-31 GHZ, 14 W GAN AMP

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Technical Specifications

  Qorvo DigiKey
Product Category RF Amplifiers RF Amplifiers
Product Number QPA2211D 2312-QPA2211D-ND
Product Name 27.5 - 31 GHz, 14 Watt GaN Amplifier RF Amplifiers
Applications Military / Defense; Mobile / Wireless Systems 5G
RoHS Compliant RoHS
Frequency Range 27500 to 31000 MHz 27500 to 31000 MHz
Minimum Gain 17 dB 26 dB
Maximum Gain 17 dB 26 dB
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