Qorvo 8.5 - 11 GHz, 4 Watt GaN Power Amplifier QPA1022

Description
Qorvo's QPA1022 is a packaged, high performance power amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). Covering 8.5 - 11.0 GHz, the QPA1022 provides > 4 W of saturated output power and 24.5 dB of large-signal gain while achieving 45% power-added efficiency. Packaged in a small 4 x 4 mm plastic overmold QFN, the QPA1022 is matched to 50Ω with integrated DC blocking capacitors at RF output and DC grounded input port. It also has a built-in power detector for system RF power checking. With a compact dimension, it can support tight lattice spacing requirements for phased array radar applications. It is also an ideal component to support test instrumentation and commercial communication systems. For additional information on GaN thermal performance refer to the following application note and video.
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Description
Qorvo's QPA1022 is a packaged, high performance power amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). Covering 8.5 - 11.0 GHz, the QPA1022 provides > 4 W of saturated output power and 24.5 dB of large-signal gain while achieving 45% power-added efficiency. Packaged in a small 4 x 4 mm plastic overmold QFN, the QPA1022 is matched to 50Ω with integrated DC blocking capacitors at RF output and DC grounded input port. It also has a built-in power detector for system RF power checking. With a compact dimension, it can support tight lattice spacing requirements for phased array radar applications. It is also an ideal component to support test instrumentation and commercial communication systems. For additional information on GaN thermal performance refer to the following application note and video.
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8.5 - 11 GHz, 4 Watt GaN Power Amplifier - QPA1022 - Qorvo
Greensboro, NC, United States
8.5 - 11 GHz, 4 Watt GaN Power Amplifier
QPA1022
8.5 - 11 GHz, 4 Watt GaN Power Amplifier QPA1022
Qorvo's QPA1022 is a packaged, high performance power amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). Covering 8.5 - 11.0 GHz, the QPA1022 provides > 4 W of saturated output power and 24.5 dB of large-signal gain while achieving 45% power-added efficiency. Packaged in a small 4 x 4 mm plastic overmold QFN, the QPA1022 is matched to 50Ω with integrated DC blocking capacitors at RF output and DC grounded input port. It also has a built-in power detector for system RF power checking. With a compact dimension, it can support tight lattice spacing requirements for phased array radar applications. It is also an ideal component to support test instrumentation and commercial communication systems. For additional information on GaN thermal performance refer to the following application note and video.

Qorvo's QPA1022 is a packaged, high performance power amplifier fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). Covering 8.5 - 11.0 GHz, the QPA1022 provides > 4 W of saturated output power and 24.5 dB of large-signal gain while achieving 45% power-added efficiency.

Packaged in a small 4 x 4 mm plastic overmold QFN, the QPA1022 is matched to 50Ω with integrated DC blocking capacitors at RF output and DC grounded input port. It also has a built-in power detector for system RF power checking. With a compact dimension, it can support tight lattice spacing requirements for phased array radar applications. It is also an ideal component to support test instrumentation and commercial communication systems.

For additional information on GaN thermal performance refer to the following application note and video.

Supplier's Site Datasheet

Technical Specifications

  Qorvo
Product Category RF Amplifiers
Product Number QPA1022
Product Name 8.5 - 11 GHz, 4 Watt GaN Power Amplifier
Amplifier Type Power Amplifier
Applications Radar Systems
RoHS Compliant RoHS
Frequency Range 8500 to 11000 MHz
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