Qorvo 10.7 - 12.7 GHz, 35 Watt GaN Amplifier QPA1006D

Description
Qorvo's QPA1006D is a wide band power amplifier MMIC fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). Covering 10.7 - 12.7 GHz, the QPA1006D provides > 35 Watts of saturated output power and > 17 dB of large-signal gain while achieving > 39% power-added efficiency. The QPA1006D RF input port is DC coupled to ground for optimum ESD performance. The QPA1006D RF ports have DC blocking capacitors and are matched to 50 ohms. The QPA1006D can support a wide range of operating conditions, including CW operation, making it well-suited for both commercial and military systems. Lead-free and RoHS compliant. For additional information on GaN thermal performance refer to the following application note and video.
Request a Quote Datasheet
Description
Qorvo's QPA1006D is a wide band power amplifier MMIC fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). Covering 10.7 - 12.7 GHz, the QPA1006D provides > 35 Watts of saturated output power and > 17 dB of large-signal gain while achieving > 39% power-added efficiency. The QPA1006D RF input port is DC coupled to ground for optimum ESD performance. The QPA1006D RF ports have DC blocking capacitors and are matched to 50 ohms. The QPA1006D can support a wide range of operating conditions, including CW operation, making it well-suited for both commercial and military systems. Lead-free and RoHS compliant. For additional information on GaN thermal performance refer to the following application note and video.
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Suppliers

Company
Product
Description
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10.7 - 12.7 GHz, 35 Watt GaN Amplifier - QPA1006D - Qorvo
Greensboro, NC, United States
10.7 - 12.7 GHz, 35 Watt GaN Amplifier
QPA1006D
10.7 - 12.7 GHz, 35 Watt GaN Amplifier QPA1006D
Qorvo's QPA1006D is a wide band power amplifier MMIC fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). Covering 10.7 - 12.7 GHz, the QPA1006D provides > 35 Watts of saturated output power and > 17 dB of large-signal gain while achieving > 39% power-added efficiency. The QPA1006D RF input port is DC coupled to ground for optimum ESD performance. The QPA1006D RF ports have DC blocking capacitors and are matched to 50 ohms. The QPA1006D can support a wide range of operating conditions, including CW operation, making it well-suited for both commercial and military systems. Lead-free and RoHS compliant. For additional information on GaN thermal performance refer to the following application note and video.

Qorvo's QPA1006D is a wide band power amplifier MMIC fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). Covering 10.7 - 12.7 GHz, the QPA1006D provides > 35 Watts of saturated output power and > 17 dB of large-signal gain while achieving > 39% power-added efficiency.

The QPA1006D RF input port is DC coupled to ground for optimum ESD performance. The QPA1006D RF ports have DC blocking capacitors and are matched to 50 ohms.

The QPA1006D can support a wide range of operating conditions, including CW operation, making it well-suited for both commercial and military systems.

Lead-free and RoHS compliant.

For additional information on GaN thermal performance refer to the following application note and video.

Supplier's Site Datasheet
RF Amplifiers - 2312-QPA1006D-ND - DigiKey
Thief River Falls, MN, United States
RF Amplifiers
2312-QPA1006D-ND
RF Amplifiers 2312-QPA1006D-ND
10.7-12.7 GHZ 35W PA DIE

10.7-12.7 GHZ 35W PA DIE

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Technical Specifications

  Qorvo DigiKey
Product Category RF Amplifiers RF Amplifiers
Product Number QPA1006D 2312-QPA1006D-ND
Product Name 10.7 - 12.7 GHz, 35 Watt GaN Amplifier RF Amplifiers
Applications Radar Systems; SATCOM Radar
RoHS Compliant RoHS
Frequency Range 10700 to 12700 MHz 10700 to 12700 MHz
Minimum Gain 17 dB 21.6 dB
Maximum Gain 17 dB 21.6 dB
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