OSI Optoelectronics' 1990 R&D 100 award winning X-UV detector series are a unique class of silicon photodiodes designed for additional sensitivity in the X-Ray region of the electromagnetic spectrum without use of any scintillator crystals or screens. Over a wide range of sensitivity from 200 nm to 0.07 nm (6 eV to 17,600 eV), one electron-hole pair is created per 3.63eV of incident energy which corresponds to extremely high stable quantum efficiencies predicted by Eph/3.63eV (see graph below). For measurement of radiation energies above 17.6 keV, refer to the "fully Depleted High Speed and High Energy Radiation Detectors" section. A reverse bias can be applied to reduce the capacitance and increase speed of response. In the unbiased mode, these detectors can be used for applications requiring low noise and low drift. These detectors are also excellent choices for detecting light wavelengths between 350 to 100 nm. The detectors can be coupled to a charge sensitive preamplifier or low-noise op-amp as shown in the circuit on the opposite page.
| OSI Optoelectronics | |
|---|---|
| Product Category | Photodiodes |
| Product Number | XUV-100 |
| Product Name | X-Ray Photodiode |
| Photodiode Type | PIN Photodiode |
| Photodiode Spectral Response | X-ray; UV |
| Spectral Response Range | 200 to 1100 nm (2000 to 11000 Å) |
| Photodiode Material | Silicon |
