The Large Active Area High Speed Detectors can be fully depleted to achieve the lowest possible junction capacitance for fast response times. They may be operated at a higher reverse voltage, up to the maximum allowable value, for achieving even faster response times in Nano seconds. The high reverse bias at this point, increases the effective electric field across the junction, hence increasing the charge collection time in the depleted region. Note that this is achieved without the sacrifice for the high responsivity as well as active area. The Large Active Area Radiation Detectors can also be fully depleted for applications measuring high energy X-rays, X-rays as well as high energy particles such as electrons, alpha rays and heavy ions. These types of radiation can be measured with two different methods. Indirect and direct.
| OSI Optoelectronics | RS Components, Ltd. | |
|---|---|---|
| Product Category | Photodiodes | Photodiodes |
| Product Number | PIN-RD15 | 1769790 |
| Product Name | Large Active Area, High Speed Photodiode | Photodiodes |
| Photodiode Type | PIN Photodiode | |
| Photodiode Spectral Response | X-ray | Visible |
| Spectral Response Range | 350 to 1100 nm (3500 to 11000 Å) | 350 to 1100 nm (3500 to 11000 Å) |
| Peak Sensitivity Wavelength | 900 nm (9000 Å) | 900 nm (9000 Å) |
| Photodiode Material | Silicon | Silicon; Si |
