The dual LED series consists of a 660nm (red) LED and a companion IR LED such as 880 / 895, 905, or 940nm. They are widely used for ratio metric measurements such as medical analytical and monitoring devices. They can also be used in applications requiring a low cost Bi-Wavelength light source. Two types of pin configurations are available: 1.) three leads with one common anode or cathode, or 2.) two leads parallel back-to-back connection. They are available in two types of packaging. Clear lead frame molded side looker, and leadless ceramic substrate. The matching photodetectors' responses are optimized for maximum responsivity at 660nm as well as near IR wavelengths. They exhibit low capacitance and low dark currents and are available in three different active area sizes in the same two types of packaging as the dual emitters: Clear lead frame molded side looker and leadless ceramic substrate.
OSI Optoelectronics offers a line of high quality and reliability plastic encapsulated photodiodes. These molded devices are available in a variety of shapes and sizes of photodetectors and packages, including industry standard T1 and T13/4, flat and lensed side lookers as well as a surface mount version (SOT-23). They are excellent for mounting on PCB and hand held devices in harsh environments. They have an excellent response in the NIR spectrum ans are also available with visible blocking compounds, transmitting only in the 700-1100 nm range. They offer fast switching time, low capacitance as well as low dark current. They can be utilized in both photoconductive and photovoltaic modes of operation.
| OSI Optoelectronics | OSI Optoelectronics | |
|---|---|---|
| Product Category | Photodiodes | Photodiodes |
| Product Number | PIN-4.0-LLS | PIN-4.0-LLS |
| Product Name | Photodiode | Molded Photodiodes |
| Photodiode Type | PIN Photodiode | PIN Photodiode |
| Photodiode Spectral Response | Visible; IR | Visible; IR |
| Spectral Response Range | 350 to 1100 nm (3500 to 11000 Å) | 350 to 1100 nm (3500 to 11000 Å) |
| Peak Sensitivity Wavelength | 660 nm (6600 Å) | |
| Photodiode Material | Silicon |