The G14858-0020AA is an InGaAs avalanche photodiode designed for distance measurement and low-light-level detection, featuring reduced dark current through an improved device structure. It is packaged in a TO-18 case with a 0.2 mm diameter photosensitive area and a borosilicate glass AR-coated window optimized for 1.55 µm. The device operates with a breakdown voltage of 50 to 80 V at 100 µA dark current, a terminal capacitance of 2.0 pF at 95% of breakdown voltage, and a cutoff frequency of 0.9 GHz at M=10 and 50 ‰Ω load. It exhibits a peak sensitivity wavelength of 1.55 µm, photosensitivity of 0.65 to 0.8 A/W at M=1, and dark current of 20 to 50 nA at VR=0.95×VBR. Operable from -40 to +85 °C and stored from -55 to +125 °C, it sustains a maximum reverse current of 2 mA and forward current of 10 mA.
InGaAs APD that greatly reduces dark current
This InGaAs APD greatly reduces dark current over existing products by the use of a new device structure and improved processing.
The G14858-0020AA is used for distance measurement, low-light-level detection, and so on.
Features
- Low dark current
- Low capacitance
- High sensitivity
| Hamamatsu Photonics Europe | |
|---|---|
| Product Category | Photodiodes |
| Product Number | G14858-0020AA |
| Product Name | InGaAs APDs |
| Photodiode Type | Avalanche Photodiode |
| Spectral Response Range | 950 to 1700 nm (9500 to 17000 Å) |
| Peak Sensitivity Wavelength | 1550 nm (15500 Å) |
| Photodiode Material | Indium Gallium Arsenide |
