OSI Optoelectronics Photovoltaic Series PIN-10DP

Description
The Photovoltaic Detector series is utilized for applications requiring high sensitivity and moderate response speeds, with an additional sensitivity in the visible-blue region for the blue enhanced series. The spectral response ranges from 350 to 1100 nm, making the regular photovoltaic devices ideal for visible and near IR applications. For additional sensitivity in the 350 to 550 nm region, the blue enhanced devices are more suitable. These detectors have high shunt resistance and low noise, and exhibit long term stability. Unbiased operation of these detectors offers stability under wide temperature variations in DC or low speed applications. For high light levels ( greater than 10mW/cm2), the Photoconductive Series detectors should be considered for better linearity. These detectors are not designed to be reverse biased! Very slight improvement in response time may be obtained with a slight bias. Applying a reverse bias of more than a few volts (>3V) will permanently damage the detectors. If faster response times are required, The Photoconductive Series should be considered. Refer to the Photovoltaic Mode (PV) paragraph in the "Photodiode Characteristics" section of this catalog for detailed information on electronics set up.
Request a Quote Datasheet
Description
The Photovoltaic Detector series is utilized for applications requiring high sensitivity and moderate response speeds, with an additional sensitivity in the visible-blue region for the blue enhanced series. The spectral response ranges from 350 to 1100 nm, making the regular photovoltaic devices ideal for visible and near IR applications. For additional sensitivity in the 350 to 550 nm region, the blue enhanced devices are more suitable. These detectors have high shunt resistance and low noise, and exhibit long term stability. Unbiased operation of these detectors offers stability under wide temperature variations in DC or low speed applications. For high light levels ( greater than 10mW/cm2), the Photoconductive Series detectors should be considered for better linearity. These detectors are not designed to be reverse biased! Very slight improvement in response time may be obtained with a slight bias. Applying a reverse bias of more than a few volts (>3V) will permanently damage the detectors. If faster response times are required, The Photoconductive Series should be considered. Refer to the Photovoltaic Mode (PV) paragraph in the "Photodiode Characteristics" section of this catalog for detailed information on electronics set up.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Photovoltaic Series - PIN-10DP - OSI Optoelectronics
Hawthorne, CA, United States
Photovoltaic Series
PIN-10DP
Photovoltaic Series PIN-10DP
The Photovoltaic Detector series is utilized for applications requiring high sensitivity and moderate response speeds, with an additional sensitivity in the visible-blue region for the blue enhanced series. The spectral response ranges from 350 to 1100 nm, making the regular photovoltaic devices ideal for visible and near IR applications. For additional sensitivity in the 350 to 550 nm region, the blue enhanced devices are more suitable. These detectors have high shunt resistance and low noise, and exhibit long term stability. Unbiased operation of these detectors offers stability under wide temperature variations in DC or low speed applications. For high light levels ( greater than 10mW/cm2), the Photoconductive Series detectors should be considered for better linearity. These detectors are not designed to be reverse biased! Very slight improvement in response time may be obtained with a slight bias. Applying a reverse bias of more than a few volts (>3V) will permanently damage the detectors. If faster response times are required, The Photoconductive Series should be considered. Refer to the Photovoltaic Mode (PV) paragraph in the "Photodiode Characteristics" section of this catalog for detailed information on electronics set up.

The Photovoltaic Detector series is utilized for applications requiring high sensitivity and moderate response speeds, with an additional sensitivity in the visible-blue region for the blue enhanced series. The spectral response ranges from 350 to 1100 nm, making the regular photovoltaic devices ideal for visible and near IR applications. For additional sensitivity in the 350 to 550 nm region, the blue enhanced devices are more suitable. These detectors have high shunt resistance and low noise, and exhibit long term stability. Unbiased operation of these detectors offers stability under wide temperature variations in DC or low speed applications. For high light levels ( greater than 10mW/cm2), the Photoconductive Series detectors should be considered for better linearity. These detectors are not designed to be reverse biased! Very slight improvement in response time may be obtained with a slight bias. Applying a reverse bias of more than a few volts (>3V) will permanently damage the detectors. If faster response times are required, The Photoconductive Series should be considered. Refer to the Photovoltaic Mode (PV) paragraph in the "Photodiode Characteristics" section of this catalog for detailed information on electronics set up.

Supplier's Site Datasheet
Photodiodes - 1837181 - RS Components, Ltd.
Corby, Northants, United Kingdom
Photodiodes
1837181
Photodiodes 1837181
Photovoltaic Si Photodiode,100mm2

Photovoltaic Si Photodiode,100mm2

Supplier's Site
Photodiodes - 1837131 - RS Components, Ltd.
Corby, Northants, United Kingdom
Photodiodes
1837131
Photodiodes 1837131
Photovoltaic Si Photodiode,100mm2

Photovoltaic Si Photodiode,100mm2

Supplier's Site

Technical Specifications

  OSI Optoelectronics RS Components, Ltd.
Product Category Photodiodes Photodiodes
Product Number PIN-10DP 1837181
Product Name Photovoltaic Series Photodiodes
Photodiode Type PIN Photodiode
Photodiode Spectral Response Visible; IR IR
Spectral Response Range 350 to 1100 nm (3500 to 11000 Å) 350 to 1100 nm (3500 to 11000 Å)
Peak Sensitivity Wavelength 970 nm (9700 Å) 970 nm (9700 Å)
Photodiode Material Silicon Silicon; Si
Unlock Full Specs
to access all available technical data

Similar Products

Integrating Sphere Detector, Collimated Beam, 3.3 in., 400-1100 nm - 819C-SL-3.3-CAL2 - Newport MKS
Specs
Spectral Response Range 400 to 1100 nm (4000 to 11000 Å)
View Details
Photodiodes - 2121833 - RS Components, Ltd.
RS Components, Ltd.
Specs
Photodiode Spectral Response IR
Peak Sensitivity Wavelength 5000 nm (50000 Å)
Photodiode Package Ceramic
View Details
Si APDs - S2385 - Hamamatsu Photonics Europe
Hamamatsu Photonics Europe
Specs
Photodiode Type Avalanche Photodiode
Spectral Response Range 400 to 1000 nm (4000 to 10000 Å)
Peak Sensitivity Wavelength 800 nm (8000 Å)
View Details
Molded Photodiodes - PIN-01-CJ - OSI Optoelectronics
Specs
Photodiode Type PIN Photodiode
Photodiode Spectral Response Visible; IR
Spectral Response Range 350 to 1100 nm (3500 to 11000 Å)
View Details