The S2385 is a silicon avalanche photodiode designed for near-infrared detection at 800 nm, operating at low bias voltages up to 200 V. It features a photosensitive area of 3.0 mm in diameter, housed in a TO-8 package. The device exhibits a typical breakdown voltage of 95 V with a temperature coefficient of 0.65 V/°C, a dark current of up to 30 nA at 20 °C, and a terminal capacitance of 40 pF. It supports operation between -20 °C and +85 °C, with a storage temperature range of -55 °C to +125 °C. The spectral response range is 400 nm to 1000 nm, with peak sensitivity at 800 nm and a quantum efficiency of 75% at M=1. The maximum forward current is 10 mA, and the reverse current limit is 200 µA.
Low bias operation, for 800 nm band
| Hamamatsu Photonics Europe | |
|---|---|
| Product Category | Photodiodes |
| Product Number | S2385 |
| Product Name | Si APDs |
| Photodiode Type | Avalanche Photodiode |
| Spectral Response Range | 400 to 1000 nm (4000 to 10000 Å) |
| Peak Sensitivity Wavelength | 800 nm (8000 Å) |
| Photodiode Material | Silicon |
