OSI Optoelectronics Chip on Carrier Photodiode FCI-InGaAS-120LCER

Description
FCI-InGaAs-XXX-LCER with active area sizes of 70µm, 120µm, 300µm, 400µm, 500µm are part of OSI Optoelectronics' high speed IR sensitive photodiodes mounted on gull wing ceramic substrates. The chips can be epoxy/eutectic mounted onto the ceramic substrate.
Datasheet
Description
FCI-InGaAs-XXX-LCER with active area sizes of 70µm, 120µm, 300µm, 400µm, 500µm are part of OSI Optoelectronics' high speed IR sensitive photodiodes mounted on gull wing ceramic substrates. The chips can be epoxy/eutectic mounted onto the ceramic substrate.
Datasheet

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Chip on Carrier Photodiode - FCI-InGaAS-120LCER - OSI Optoelectronics
Hawthorne, CA, United States
Chip on Carrier Photodiode
FCI-InGaAS-120LCER
Chip on Carrier Photodiode FCI-InGaAS-120LCER
FCI-InGaAs-XXX-LCER with active area sizes of 70µm, 120µm, 300µm, 400µm, 500µm are part of OSI Optoelectronics' high speed IR sensitive photodiodes mounted on gull wing ceramic substrates. The chips can be epoxy/eutectic mounted onto the ceramic substrate.

FCI-InGaAs-XXX-LCER with active area sizes of 70µm, 120µm, 300µm, 400µm, 500µm are part of OSI Optoelectronics' high speed IR sensitive photodiodes mounted on gull wing ceramic substrates. The chips can be epoxy/eutectic mounted onto the ceramic substrate.

Supplier's Site Datasheet

Technical Specifications

  OSI Optoelectronics
Product Category Photodiodes
Product Number FCI-InGaAS-120LCER
Product Name Chip on Carrier Photodiode
Photodiode Type PIN Photodiode
Photodiode Spectral Response IR
Spectral Response Range 900 to 1700 nm (9000 to 17000 Å)
Peak Sensitivity Wavelength 1550 nm (15500 Å)
Photodiode Material Indium Gallium Arsenide
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