OSI Optoelectronics Chip on Carrier Photodiode FCI-InGaAS-120ACER

Description
FCI-InGaAs-XXX-ACER with active area sizes of 70µm, 120µm, 300µm, 400µm, 500µm is part of OSI Optoelectronics' high speed IR sensitive photodiodes mounted on angled ceramic substrates. The ceramic substrate with an angled surface by 5° greatly reduces the back reflection. The chips can be epoxy/eutectic mounted onto the angled ceramic substrate.
Datasheet
Description
FCI-InGaAs-XXX-ACER with active area sizes of 70µm, 120µm, 300µm, 400µm, 500µm is part of OSI Optoelectronics' high speed IR sensitive photodiodes mounted on angled ceramic substrates. The ceramic substrate with an angled surface by 5° greatly reduces the back reflection. The chips can be epoxy/eutectic mounted onto the angled ceramic substrate.
Datasheet

Suppliers

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Chip on Carrier Photodiode - FCI-InGaAS-120ACER - OSI Optoelectronics
Hawthorne, CA, United States
Chip on Carrier Photodiode
FCI-InGaAS-120ACER
Chip on Carrier Photodiode FCI-InGaAS-120ACER
FCI-InGaAs-XXX-ACER with active area sizes of 70µm, 120µm, 300µm, 400µm, 500µm is part of OSI Optoelectronics' high speed IR sensitive photodiodes mounted on angled ceramic substrates. The ceramic substrate with an angled surface by 5° greatly reduces the back reflection. The chips can be epoxy/eutectic mounted onto the angled ceramic substrate.

FCI-InGaAs-XXX-ACER with active area sizes of 70µm, 120µm, 300µm, 400µm, 500µm is part of OSI Optoelectronics' high speed IR sensitive photodiodes mounted on angled ceramic substrates. The ceramic substrate with an angled surface by 5° greatly reduces the back reflection. The chips can be epoxy/eutectic mounted onto the angled ceramic substrate.

Supplier's Site Datasheet

Technical Specifications

  OSI Optoelectronics
Product Category Photodiodes
Product Number FCI-InGaAS-120ACER
Product Name Chip on Carrier Photodiode
Photodiode Type PIN Photodiode
Photodiode Spectral Response IR
Spectral Response Range 900 to 1700 nm (9000 to 17000 Å)
Peak Sensitivity Wavelength 1550 nm (15500 Å)
Photodiode Material Indium Gallium Arsenide
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