Nexperia B.V. 50 V, 100 mA NPN/PNP Resistor-Equipped Transistor; R1 = 4.7 kΩ, R2 = open PEMD6,115

NPN/PNP Resistor-Equipped Transistor (RET) in a ultra small flat lead SOT666 Surface-Mounted Device (SMD) plastic package.

NPN/NPN complement: PEMH7

PNP/PNP complement: PEMB3

Features and benefits

• Built-in bias resistors
• Simplifies circuit design
• Reduces component count
• Reduces pick and place costs

Applications

• Low current peripheral driver
• Controlling IC inputs
• Replaces general-purpose transistors in digital applications

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

TRANS PREBIAS 1NPN 1PNP SOT-666

TRANS PREBIAS 1NPN 1PNP SOT-666

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 300mW Surface Mount SOT-666

PEMD6; PUMD6 - NPN/PNP resistor-equipped transistors; R1 = 4.7 kOhm, R2 = open SOT 6-Pin Product overview: PEMD6,115 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 4.7 kOhm. Search-friendly keywords include transistor, BJT, switching, amplification, 4.7 kOhm, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-PEMD6,115 can be used for catalog matching and distributor lookup.