Nexperia B.V. NPN resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 10 kOhm PDTC123YU,115

Description
NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123YU Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs Applications General-purpose switching and amplification Inverter and interface circuits Circuit drivers
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Description
NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123YU Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs Applications General-purpose switching and amplification Inverter and interface circuits Circuit drivers
Request a Quote
Datasheet
Datasheet Summary
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NPN resistor-equipped transistor with integrated bias resistors R1 = 2.2 kΩ and R2 = 10 kΩ in a SOT323 (SC-70) surface-mounted package measuring 2 mm × 1.25 mm × 0.95 mm. Features a collector-emitter voltage rating of 50 V, collector current of 100 mA, and total power dissipation of 200 mW at 25 °C ambient temperature. Junction temperature ranges from -65 °C to 150 °C. Qualified in accordance with AEC-Q101 for automotive applications. Thermal resistance from junction to ambient is 625 K/W when mounted on a standard FR4 PCB. Collector-emitter saturation voltage is ≤150 mV at 10 mA collector current and 0.5 mA base current. DC current gain is ≥35 at 5 mA collector current and 5 V collector-emitter voltage.

Datasheet Summary
Powered by GS/AI

NPN resistor-equipped transistor with integrated bias resistors R1 = 2.2 kΩ and R2 = 10 kΩ in a SOT323 (SC-70) surface-mounted package measuring 2 mm × 1.25 mm × 0.95 mm. Features a collector-emitter voltage rating of 50 V, collector current of 100 mA, and total power dissipation of 200 mW at 25 °C ambient temperature. Junction temperature ranges from -65 °C to 150 °C. Qualified in accordance with AEC-Q101 for automotive applications. Thermal resistance from junction to ambient is 625 K/W when mounted on a standard FR4 PCB. Collector-emitter saturation voltage is ≤150 mV at 10 mA collector current and 0.5 mA base current. DC current gain is ≥35 at 5 mA collector current and 5 V collector-emitter voltage.

Suppliers

Company
Product
Description
Supplier Links
NPN resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 10 kOhm - PDTC123YU,115 - Nexperia B.V.
Nijmegen, Netherlands
NPN resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 10 kOhm
PDTC123YU,115
NPN resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 10 kOhm PDTC123YU,115
NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA123YU Features and benefits Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs Applications General-purpose switching and amplification Inverter and interface circuits Circuit drivers

NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package.

PNP complement: PDTA123YU

Features and benefits

  • Built-in bias resistors
  • Simplifies circuit design
  • Reduces component count
  • Reduces pick and place costs

Applications

  • General-purpose switching and amplification
  • Inverter and interface circuits
  • Circuit drivers
Supplier's Site Datasheet
Singapore, Singapore
Automotive 50V 100mA 200mW Bipolar Transistor
292-PDTC123YU,115
Automotive 50V 100mA 200mW Bipolar Transistor 292-PDTC123YU,115
Trans Digital BJT NPN 50V 100mA 200mW Automotive 3-Pin SC-70 T/R Product overview: PDTC123YU,115 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 50V, 100mA, 200mW. Search-friendly keywords include transistor, BJT, switching, amplification, Automotive, 50V, 100mA, 200mW, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-PDTC123YU,115 can be used for catalog matching and distributor lookup.

Trans Digital BJT NPN 50V 100mA 200mW Automotive 3-Pin SC-70 T/R Product overview: PDTC123YU,115 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Automotive, 50V, 100mA, 200mW. Search-friendly keywords include transistor, BJT, switching, amplification, Automotive, 50V, 100mA, 200mW, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-PDTC123YU,115 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - PDTC123YU,115 - 1087219-PDTC123YU,115 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - PDTC123YU,115
1087219-PDTC123YU,115
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - PDTC123YU,115 1087219-PDTC123YU,115
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1087219-PDTC123YU,11 5 Packaging: Reel - TR Mounting: SMD (SMT) Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 10k Categories: Discrete Semiconductor Products Status: Active Case / Package: SOT-323-3 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 150mV @ 500μA, 10mA Collector Cut-off Current(Max): 1μA Typical Gain (hFE) (Min): 35 @ 5mA, 5V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Sufficient

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1087219-PDTC123YU,115
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: SOT-323-3
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 150mV @ 500μA, 10mA
Collector Cut-off Current(Max): 1μA
Typical Gain (hFE) (Min): 35 @ 5mA, 5V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
 - PDTC123YU,115 - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

Supplier's Site Datasheet
Single, Pre-Biased Bipolar Transistors - 1727-1708-1-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
1727-1708-1-ND
Single, Pre-Biased Bipolar Transistors 1727-1708-1-ND
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 200mW Surface Mount SOT-323

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 200mW Surface Mount SOT-323

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - 1727-1708-6-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
1727-1708-6-ND
Single, Pre-Biased Bipolar Transistors 1727-1708-6-ND
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 200mW Surface Mount SOT-323

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 200mW Surface Mount SOT-323

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Single, Pre-Biased Bipolar Transistors - 1727-1708-2-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
1727-1708-2-ND
Single, Pre-Biased Bipolar Transistors 1727-1708-2-ND
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 200mW Surface Mount SOT-323

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 200mW Surface Mount SOT-323

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - PDTC123YU,115 - ODG (Origin Data Global)
Shenzhen, China
Single, Pre-Biased Bipolar Transistors
PDTC123YU,115
Single, Pre-Biased Bipolar Transistors PDTC123YU,115
TRANS PREBIAS NPN 200MW SOT323

TRANS PREBIAS NPN 200MW SOT323

Supplier's Site Datasheet
Bipolar Pre-Biased / Digital Transistor, Brt, 50 V, 100 Ma, 2.2 Kohm, 10 Kohm, 0.22, Sot-323 Rohs Compliant Nexperia - 34R4451 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar Pre-Biased / Digital Transistor, Brt, 50 V, 100 Ma, 2.2 Kohm, 10 Kohm, 0.22, Sot-323 Rohs Compliant Nexperia
34R4451
Bipolar Pre-Biased / Digital Transistor, Brt, 50 V, 100 Ma, 2.2 Kohm, 10 Kohm, 0.22, Sot-323 Rohs Compliant Nexperia 34R4451
Bipolar Pre-Biased / Digital Transistor, BRT, 50 V, 100 mA, 2.2 kohm, 10 kohm, 0.22, SOT-323 RoHS Compliant: Yes

Bipolar Pre-Biased / Digital Transistor, BRT, 50 V, 100 mA, 2.2 kohm, 10 kohm, 0.22, SOT-323 RoHS Compliant: Yes

Supplier's Site
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PDTC123YU,115
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PDTC123YU,115
TRANS PREBIAS NPN 50V SOT323

TRANS PREBIAS NPN 50V SOT323

Supplier's Site

Technical Specifications

  Nexperia B.V. ERSAELECTRONICS PTE. LTD. Win Source Electronics Rochester Electronics DigiKey ODG (Origin Data Global) Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number PDTC123YU,115 292-PDTC123YU,115 1087219-PDTC123YU,115 PDTC123YU,115 1727-1708-1-ND PDTC123YU,115 34R4451 PDTC123YU,115
Product Name NPN resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 10 kOhm Automotive 50V 100mA 200mW Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - PDTC123YU,115 Single, Pre-Biased Bipolar Transistors Single, Pre-Biased Bipolar Transistors Bipolar Pre-Biased / Digital Transistor, Brt, 50 V, 100 Ma, 2.2 Kohm, 10 Kohm, 0.22, Sot-323 Rohs Compliant Nexperia Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Package Type SOT323; SOT323 SOT323 SOT3; SOT323; SOT-323-3 SOT323 SOT323; SC-70, SOT-323 SOT323; SC-70, SOT-323 TO-3; SOT3; SOT323 Automotive
Polarity NPN; NPN - Pre-Biased NPN NPN NPN - Pre-Biased; NPN
Packing Method Tape Reel; Tape & Reel Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
Transistor Grade / Operating Range Automotive
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