NPN resistor-equipped transistor with built-in bias resistors R1 = 2.2 kΩ and R2 = 10 kΩ in a DFN1006-3 (SOT883) surface-mount package measuring 1 mm × 0.6 mm × 0.48 mm. Offers a collector-emitter voltage rating of 50 V, collector current of 100 mA, and maximum power dissipation of 250 mW at 25 °C. AEC-Q101 qualified for automotive applications. Junction temperature range is -65 °C to 150 °C.
NPN Resistor-Equipped Transistor (RET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package.
PNP complement: PDTA123YM
Features and benefits
Applications
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
PDTC123Y series - NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm DFN 3-Pin Product overview: PDTC123YM,315 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 2.2 kOhm, 10 kOhm, DFN. Search-friendly keywords include transistor, BJT, switching, amplification, 2.2 kOhm, 10 kOhm, DFN, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-PDTC123YM,315 can be used for catalog matching and distributor lookup.
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1087217-PDTC123YM,31
Packaging: Reel - TR
Mounting: SMD (SMT)
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: DFN1006-3
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 150mV @ 500μA, 10mA
Collector Cut-off Current(Max): 1μA
Typical Gain (hFE) (Min): 35 @ 5mA, 5V
Maximum Power Dissipation: 250mW
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Balance
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250mW Surface Mount SOT-883
TRANS PREBIAS NPN 50V SOT883
TRANS PREBIAS NPN 50V SOT883
RF TRANSISTOR ROHS COMPLIANT: YES
TRANS PREBIAS NPN 50V SOT883
| Nexperia B.V. | Rochester Electronics | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Transistors | RF Transistors | Bipolar RF Transistors |
| Product Number | PDTC123YM,315 | PDTC123YM,315 | 292-PDTC123YM,315 | 1087217-PDTC123YM,315 | 1727-PDTC123YM,315TR-ND | 29AK3134 | PDTC123YM,315 |
| Product Name | NPN resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 10 kOhm | 2.2 kOhm 10 kOhm DFN Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - PDTC123YM,315 | Single, Pre-Biased Bipolar Transistors | Rf Transistor Rohs Compliant Nexperia | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | |
| Package Type | SOT883 SOT883 | SOT883 | SOT3; DFN1006-3 | SC-101, SOT-883 | TO-3 | SC-101, SOT-883 | |
| Polarity | NPN | NPN; NPN - Pre-Biased | NPN | ||||
| Packing Method | Tape Reel; Tape & Reel | Tape Reel; Tape & Reel (TR) | |||||
| Transistor Grade / Operating Range | Automotive |
