Nexperia B.V. 60 V, 2 A NPN low VCEsat transistor PBSS4260QAZ

Description
NPN low VCEsat transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement: PBSS5260QA. Features and benefits Very Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC High energy efficiency due to less heat generation Reduced Printed-Circuit Board (PCB) area requirments Solderable side pads Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
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Request a Quote Datasheet
Description
NPN low VCEsat transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement: PBSS5260QA. Features and benefits Very Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC High energy efficiency due to less heat generation Reduced Printed-Circuit Board (PCB) area requirments Solderable side pads Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
60 V, 2 A NPN low VCEsat transistor - PBSS4260QAZ - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
60 V, 2 A NPN low VCEsat transistor
PBSS4260QAZ
60 V, 2 A NPN low VCEsat transistor PBSS4260QAZ
NPN low VCEsat transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement: PBSS5260QA. Features and benefits Very Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain hFE at high IC High energy efficiency due to less heat generation Reduced Printed-Circuit Board (PCB) area requirments Solderable side pads Applications Loadswitch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)

NPN low VCEsat transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

PNP complement: PBSS5260QA.

Features and benefits

  • Very Low collector-emitter saturation voltage VCEsat
  • High collector current capability IC and ICM
  • High collector current gain hFE at high IC
  • High energy efficiency due to less heat generation
  • Reduced Printed-Circuit Board (PCB) area requirments
  • Solderable side pads

Applications

  • Loadswitch
  • Battery-driven devices
  • Power management
  • Charging circuits
  • Power switches (e.g. motors, fans)
Supplier's Site Datasheet
Single Bipolar Transistors - 1727-PBSS4260QAZTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-PBSS4260QAZTR-ND
Single Bipolar Transistors 1727-PBSS4260QAZTR-ND
Bipolar (BJT) Transistor NPN 60V 2A 180MHz 325mW Surface Mount DFN1010D-3

Bipolar (BJT) Transistor NPN 60V 2A 180MHz 325mW Surface Mount DFN1010D-3

Buy Now Datasheet
Single Bipolar Transistors - 1727-PBSS4260QAZCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-PBSS4260QAZCT-ND
Single Bipolar Transistors 1727-PBSS4260QAZCT-ND
Bipolar (BJT) Transistor NPN 60V 2A 180MHz 325mW Surface Mount DFN1010D-3

Bipolar (BJT) Transistor NPN 60V 2A 180MHz 325mW Surface Mount DFN1010D-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 992796-PBSS4260QAZ - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
992796-PBSS4260QAZ
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 992796-PBSS4260QAZ
Win Source Part Number: 992796-PBSS4260QAZ Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Tape & Reel Standard Package: 5,000 Mounting: SMD (SMT) Power - Max: 325 mW Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 2 A Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 190mV @ 50mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 2V Frequency - Transition: 180MHz Package / Case: 3-XDFN Exposed Pad Supplier Device Package: DFN1010D-3 Temperature Range - Operating: 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 63 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0075 Mfr: Nexperia USA Inc. Other Names: 568-12680-6-ND,568-1 2680-2-ND,PBSS4260QA ,147,PBSS4260QA,568- 10935-6-ND,1727-1464 -1-ND,568-12680-6,56 8-10935-2-ND,PBSS426 0QAZ-ND,568-12680-1, NEXNXPPBSS4260QAZ,56 8-12680-2,568-12680- 1-ND,1727-1464-2-ND, 1727-1464-1,568-1093 5-2,568-10935-1,568- 10935-6,568-10935-1- ND,1727-1464-6-ND,17 27-2381-6,1727-1464- 6,2156-PBSS4260QAZ-N EX,1727-2381-2,1727- 1464-2,934067162147, 1727-2381-1 Base Product Number: PBSS4260

Win Source Part Number: 992796-PBSS4260QAZ
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Package: Tape & Reel
Standard Package: 5,000
Mounting: SMD (SMT)
Power - Max: 325 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 2 A
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 190mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 2V
Frequency - Transition: 180MHz
Package / Case: 3-XDFN Exposed Pad
Supplier Device Package: DFN1010D-3
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 63 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0075
Mfr: Nexperia USA Inc.
Other Names: 568-12680-6-ND,568-12680-2-ND,PBSS4260QA,147,PBSS4260QA,568-10935-6-ND,1727-1464-1-ND,568-12680-6,568-10935-2-ND,PBSS4260QAZ-ND,568-12680-1,NEXNXPPBSS4260QAZ,568-12680-2,568-12680-1-ND,1727-1464-2-ND,1727-1464-1,568-10935-2,568-10935-1,568-10935-6,568-10935-1-ND,1727-1464-6-ND,1727-2381-6,1727-1464-6,2156-PBSS4260QAZ-NEX,1727-2381-2,1727-1464-2,934067162147,1727-2381-1
Base Product Number: PBSS4260

Buy Now Datasheet
- PBSS4260QAZ - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
PBSS4260QAZ
PBSS4260QAZ
Small Signal Bipolar Transistor

Small Signal Bipolar Transistor

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
PBSS4260QAZ
Bipolar Transistors - BJT PBSS4260QAZ
Bipolar Transistors - BJT 60 V, 2 A NPN low VCEsat (BISS) transi

Bipolar Transistors - BJT 60 V, 2 A NPN low VCEsat (BISS) transi

Buy Now Datasheet
Bipolar (Bjt) Single Transistor, Npn, 60 V, 180 Mhz, 325 Mw, 2 A, 40 Rohs Compliant Nexperia - 68Y7775 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Bipolar (Bjt) Single Transistor, Npn, 60 V, 180 Mhz, 325 Mw, 2 A, 40 Rohs Compliant Nexperia
68Y7775
Bipolar (Bjt) Single Transistor, Npn, 60 V, 180 Mhz, 325 Mw, 2 A, 40 Rohs Compliant Nexperia 68Y7775
Bipolar (BJT) Single Transistor, NPN, 60 V, 180 MHz, 325 mW, 2 A, 40 RoHS Compliant: Yes

Bipolar (BJT) Single Transistor, NPN, 60 V, 180 MHz, 325 mW, 2 A, 40 RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. DigiKey Win Source Electronics Rochester Electronics VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number PBSS4260QAZ 1727-PBSS4260QAZTR-ND 992796-PBSS4260QAZ PBSS4260QAZ PBSS4260QAZ 68Y7775
Product Name 60 V, 2 A NPN low VCEsat transistor Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors - BJT Bipolar (Bjt) Single Transistor, Npn, 60 V, 180 Mhz, 325 Mw, 2 A, 40 Rohs Compliant Nexperia
Package Type SOT1215 SOT1215 3-XDFN Exposed Pad SOT3 SOT1215 TO-3
Polarity NPN NPN NPN
Transistor Grade / Operating Range Automotive
IC(max) 2000 milliamps
Power Gain 40 dB
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