Nexperia B.V. 60 V, 1.5 A PNP BISS loadswitch PBLS6021D,115

Description
PNP low VCEsat transistor and NPN Resistor- Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. Features and benefits Low VCEsat and resistor-equipped transistor in one package Low threshold voltage (<1 V) compared to MOSFET Space-saving solution Reduction of component count Applications Supply line switches Battery charger switches High-side switches for LEDs, drivers and backlights Portable equipment
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Description
PNP low VCEsat transistor and NPN Resistor- Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. Features and benefits Low VCEsat and resistor-equipped transistor in one package Low threshold voltage (<1 V) compared to MOSFET Space-saving solution Reduction of component count Applications Supply line switches Battery charger switches High-side switches for LEDs, drivers and backlights Portable equipment
Request a Quote
Datasheet
Datasheet Summary
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PNP low Vₓₑsat transistor and NPN resistor-equipped transistor in a TSOP6 (SOT457) surface-mounted plastic package, with a collector-emitter voltage rating of -60 V, collector current of -1.5 A, and peak collector current of -3 A for the PNP transistor. The NPN transistor has a collector-emitter voltage rating of 50 V and output current of 100 mA. The device features a low threshold voltage (<1 V), reduced component count, and is qualified for automotive applications. Thermal resistance from junction to ambient ranges from 165 K/W on a ceramic PCB to 260 K/W in free air. Maximum junction temperature is 150 °C.

Datasheet Summary
Powered by GS/AI

PNP low Vₓₑsat transistor and NPN resistor-equipped transistor in a TSOP6 (SOT457) surface-mounted plastic package, with a collector-emitter voltage rating of -60 V, collector current of -1.5 A, and peak collector current of -3 A for the PNP transistor. The NPN transistor has a collector-emitter voltage rating of 50 V and output current of 100 mA. The device features a low threshold voltage (<1 V), reduced component count, and is qualified for automotive applications. Thermal resistance from junction to ambient ranges from 165 K/W on a ceramic PCB to 260 K/W in free air. Maximum junction temperature is 150 °C.

Suppliers

Company
Product
Description
Supplier Links
60 V, 1.5 A PNP BISS loadswitch - PBLS6021D,115 - Nexperia B.V.
Nijmegen, Netherlands
60 V, 1.5 A PNP BISS loadswitch
PBLS6021D,115
60 V, 1.5 A PNP BISS loadswitch PBLS6021D,115
PNP low VCEsat transistor and NPN Resistor- Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. Features and benefits Low VCEsat and resistor-equipped transistor in one package Low threshold voltage (<1 V) compared to MOSFET Space-saving solution Reduction of component count Applications Supply line switches Battery charger switches High-side switches for LEDs, drivers and backlights Portable equipment

PNP low VCEsat transistor and NPN Resistor- Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.

Features and benefits

  • Low VCEsat and resistor-equipped transistor in one package
  • Low threshold voltage (<1 V) compared to MOSFET
  • Space-saving solution
  • Reduction of component count

Applications

  • Supply line switches
  • Battery charger switches
  • High-side switches for LEDs, drivers and backlights
  • Portable equipment
Supplier's Site Datasheet
Bipolar Transistor Arrays, Pre-Biased - 1727-2377-2-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
1727-2377-2-ND
Bipolar Transistor Arrays, Pre-Biased 1727-2377-2-ND
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 60V 100mA, 1.5A 150MHz 760mW Surface Mount 6-TSOP

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 60V 100mA, 1.5A 150MHz 760mW Surface Mount 6-TSOP

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PBLS6021D,115 - 1086383-PBLS6021D,115 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PBLS6021D,115
1086383-PBLS6021D,115
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PBLS6021D,115 1086383-PBLS6021D,115
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1086383-PBLS6021D,11 5 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 150MHz Transistor Polarity: 1 NPN Pre-Biased, 1 PNP Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 2.2k Categories: Discrete Semiconductor Products Status: Active Case / Package: 6-TSOP Maximum Current Collector: 100mA, 1.5A VCEO Maximum Collector-Emitter Breakdown Voltage: 50V, 60V Max Vce (sat): 150mV @ 500μA, 10mA / 260mV @ 100mA, 1.5A Collector Cut-off Current(Max): 1μA, 100nA Typical Gain (hFE) (Min): 30 @ 20mA, 5V / 140 @ 1A, 2V Maximum Power Dissipation: 760mW Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1086383-PBLS6021D,115
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 150MHz
Transistor Polarity: 1 NPN Pre-Biased, 1 PNP
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 2.2k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: 6-TSOP
Maximum Current Collector: 100mA, 1.5A
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V, 60V
Max Vce (sat): 150mV @ 500μA, 10mA / 260mV @ 100mA, 1.5A
Collector Cut-off Current(Max): 1μA, 100nA
Typical Gain (hFE) (Min): 30 @ 20mA, 5V / 140 @ 1A, 2V
Maximum Power Dissipation: 760mW
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
 - PBLS6021D,115 - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon

Supplier's Site Datasheet
Singapore, Singapore
Bipolar Transistor
293-PBLS6021D,115
Bipolar Transistor 293-PBLS6021D,115
TRANS PREBIAS 1NPN 1PNP 6TSOP Product overview: PBLS6021D,115 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-PBLS6021D,115 can be used for catalog matching and distributor lookup.

TRANS PREBIAS 1NPN 1PNP 6TSOP Product overview: PBLS6021D,115 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-PBLS6021D,115 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - PBLS6021D,115 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
PBLS6021D,115
Discrete Semiconductor Products - Transistors - Bipolar (BJT) PBLS6021D,115
TRANS PREBIAS 1NPN 1PNP 6TSOP

TRANS PREBIAS 1NPN 1PNP 6TSOP

Supplier's Site
Transistor, Bipolar Rohs Compliant Nexperia - 29AK2868 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, Bipolar Rohs Compliant Nexperia
29AK2868
Transistor, Bipolar Rohs Compliant Nexperia 29AK2868
TRANSISTOR, BIPOLAR ROHS COMPLIANT: YES

TRANSISTOR, BIPOLAR ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey Win Source Electronics Rochester Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number PBLS6021D,115 1727-2377-2-ND 1086383-PBLS6021D,115 PBLS6021D,115 293-PBLS6021D,115 PBLS6021D,115 29AK2868
Product Name 60 V, 1.5 A PNP BISS loadswitch Bipolar Transistor Arrays, Pre-Biased TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - PBLS6021D,115 Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT) Transistor, Bipolar Rohs Compliant Nexperia
Package Type SOT457 SOT457 SC-74, SOT-457 SOT3; 6-TSOP SOT457 Tape & Reel (TR) TO-3
Polarity NPN; PNP NPN; PNP; 1 NPN Pre-Biased, 1 PNP NPN; PNP PNP
Packing Method Tape Reel; Tape & Reel Tape & Reel (TR) Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
IC(max) 100000 to ? milliamps 100 to 1500 milliamps
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