The BUK7Y72-80E is an N-channel MOSFET designed for automotive applications, compliant with AEC-Q101 standards. It operates at a maximum drain-source voltage of 80V and can handle a continuous drain current of up to 16A. The device features a low on-state resistance of 72 mΩ at a gate-source voltage of 10V, which contributes to efficient power management. It is rated for operation in thermally demanding environments, with a maximum junction temperature of 175 °C. The LFPAK56 package allows for effective thermal dissipation, making it suitable for high-performance power switching applications, including motor control and transmission systems. The product is also RoHS compliant, ensuring it meets environmental regulations.
Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Features and benefits
Applications
N-Channel 80V 16A (Tc) 45W (Tc) Surface Mount LFPAK56, Power-SO8
N-Channel 80V 16A (Tc) 45W (Tc) Surface Mount LFPAK56, Power-SO8
N-Channel 80V 16A (Tc) 45W (Tc) Surface Mount LFPAK56, Power-SO8
MOSFET N-CH 80V 16A LFPAK56
MOSFET, AEC-Q101, N-CH, 80V, 16A, LFPAK56 ROHS COMPLIANT: YES
MOSFET N-CH 80V 16A LFPAK56
| Nexperia B.V. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BUK7Y72-80EX | 1727-1894-2-ND | BUK7Y72-80EX | BUK7Y72-80EX | 73AH9780 | BUK7Y72-80EX |
| Product Name | N-channel 80 V, 72 mΩ standard level MOSFET in LFPAK56 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, Aec-Q101, N-Ch, 80V, 16A, Lfpak56 Rohs Compliant Nexperia | Single FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 80 volts | 80 volts | ||||
| IDSS | 16000 milliamps | 16000 milliamps | ||||
| VGS(off) | 20 volts | |||||
| PD | 45 milliwatts | 45000 milliwatts |