Nexperia B.V. N-channel 40 V, 2 mOhm standard level MOSFET in LFPAK88 BUK7S2R0-40HJ

Description
Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a copper-clip LFPAK88 package. This product has been fully designed and qualified to meet beyond AEC-Q101 requirements delivering high performance and reliability. Features and benefits Fully automotive qualified to beyond AEC-Q101: -55 °C to +175 °C rating suitable for thermally demanding environments LFPAK88 package: Designed for smaller footprint and improved power density over older wire bond packages such as D²PAK for today’s space constrained high power automotive applications Thin package and copper clip enables LFPAK88 to be highly efficient thermally LFPAK copper clip technology enabling improvements over wire bond packages by: Increased maximum current capability and excellent current spreading Improved RDSon Low source inductance Low thermal resistance Rth LFPAK Gull Wing leads: Flexible leads enabling high Board Level Reliability absorbing mechanical and thermal cycling stress, unlike traditional QFN packages Visual (AOI) soldering inspection, no need for expensive x-ray equipment Easy solder wetting for good mechanical solder joint Unique 40 V Trench 9 superjunction technology: Reduced cell pitch and superjunction platform enables lower RDSon in the same footprint Improved SOA and avalanche capability compared to standard TrenchMOS Tight VGS(th) limits enable easy paralleling of MOSFETs Applications 12 V automotive systems 48 V DC/DC systems (on 12 V secondary side) Higher power motors, lamps and solenoid control Reverse polarity protection Ultra high performance power switching
  • N-channel 40 V, 2 mOhm standard level MOSFET in LFPAK88 - BUK7S2R0-40HJ - Nexperia B.V.
    Nexperia B.V.
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    DigiKey
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    DigiKey
  • Single FETs, MOSFETs - 1727-BUK7S2R0-40HJCT-ND - DigiKey
    DigiKey
  • Mosfet, N-Ch, 40V, 190A, Lfpak88 Rohs Compliant Nexperia - 56AJ9601 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BUK7S2R0-40HJ - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
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Description
Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a copper-clip LFPAK88 package. This product has been fully designed and qualified to meet beyond AEC-Q101 requirements delivering high performance and reliability. Features and benefits Fully automotive qualified to beyond AEC-Q101: -55 °C to +175 °C rating suitable for thermally demanding environments LFPAK88 package: Designed for smaller footprint and improved power density over older wire bond packages such as D²PAK for today’s space constrained high power automotive applications Thin package and copper clip enables LFPAK88 to be highly efficient thermally LFPAK copper clip technology enabling improvements over wire bond packages by: Increased maximum current capability and excellent current spreading Improved RDSon Low source inductance Low thermal resistance Rth LFPAK Gull Wing leads: Flexible leads enabling high Board Level Reliability absorbing mechanical and thermal cycling stress, unlike traditional QFN packages Visual (AOI) soldering inspection, no need for expensive x-ray equipment Easy solder wetting for good mechanical solder joint Unique 40 V Trench 9 superjunction technology: Reduced cell pitch and superjunction platform enables lower RDSon in the same footprint Improved SOA and avalanche capability compared to standard TrenchMOS Tight VGS(th) limits enable easy paralleling of MOSFETs Applications 12 V automotive systems 48 V DC/DC systems (on 12 V secondary side) Higher power motors, lamps and solenoid control Reverse polarity protection Ultra high performance power switching
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Datasheet
Datasheet Summary
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N-channel 40 V MOSFET using Trench 9 superjunction technology in an LFPAK88 package, designed for automotive applications with a 1.6 mm body height and 8 mm × 8 mm footprint. It is rated for -55 °C to +175 °C operation, supports continuous drain currents up to 190 A, and has a typical on-state resistance of 1.7 mΩ at 25 °C. The device meets beyond AEC-Q101 requirements, features a copper clip for low thermal resistance and high current capability, and includes gull-wing leads for improved board-level reliability. It is suited for 12 V and 48 V automotive power systems, motor control, and reverse polarity protection.

Datasheet Summary
Powered by GS/AI

N-channel 40 V MOSFET using Trench 9 superjunction technology in an LFPAK88 package, designed for automotive applications with a 1.6 mm body height and 8 mm × 8 mm footprint. It is rated for -55 °C to +175 °C operation, supports continuous drain currents up to 190 A, and has a typical on-state resistance of 1.7 mΩ at 25 °C. The device meets beyond AEC-Q101 requirements, features a copper clip for low thermal resistance and high current capability, and includes gull-wing leads for improved board-level reliability. It is suited for 12 V and 48 V automotive power systems, motor control, and reverse polarity protection.

Suppliers

Company
Product
Description
Supplier Links
N-channel 40 V, 2 mOhm standard level MOSFET in LFPAK88 - BUK7S2R0-40HJ - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
N-channel 40 V, 2 mOhm standard level MOSFET in LFPAK88
BUK7S2R0-40HJ
N-channel 40 V, 2 mOhm standard level MOSFET in LFPAK88 BUK7S2R0-40HJ
Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a copper-clip LFPAK88 package. This product has been fully designed and qualified to meet beyond AEC-Q101 requirements delivering high performance and reliability. Features and benefits Fully automotive qualified to beyond AEC-Q101: -55 °C to +175 °C rating suitable for thermally demanding environments LFPAK88 package: Designed for smaller footprint and improved power density over older wire bond packages such as D²PAK for today’s space constrained high power automotive applications Thin package and copper clip enables LFPAK88 to be highly efficient thermally LFPAK copper clip technology enabling improvements over wire bond packages by: Increased maximum current capability and excellent current spreading Improved RDSon Low source inductance Low thermal resistance Rth LFPAK Gull Wing leads: Flexible leads enabling high Board Level Reliability absorbing mechanical and thermal cycling stress, unlike traditional QFN packages Visual (AOI) soldering inspection, no need for expensive x-ray equipment Easy solder wetting for good mechanical solder joint Unique 40 V Trench 9 superjunction technology: Reduced cell pitch and superjunction platform enables lower RDSon in the same footprint Improved SOA and avalanche capability compared to standard TrenchMOS Tight VGS(th) limits enable easy paralleling of MOSFETs Applications 12 V automotive systems 48 V DC/DC systems (on 12 V secondary side) Higher power motors, lamps and solenoid control Reverse polarity protection Ultra high performance power switching

Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a copper-clip LFPAK88 package. This product has been fully designed and qualified to meet beyond AEC-Q101 requirements delivering high performance and reliability.

Features and benefits

  • Fully automotive qualified to beyond AEC-Q101:
    • -55 °C to +175 °C rating suitable for thermally demanding environments
  • LFPAK88 package:
    • Designed for smaller footprint and improved power density over older wire bond packages such as D²PAK for today’s space constrained high power automotive applications
    • Thin package and copper clip enables LFPAK88 to be highly efficient thermally
  • LFPAK copper clip technology enabling improvements over wire bond packages by:
    • Increased maximum current capability and excellent current spreading
    • Improved RDSon
    • Low source inductance
    • Low thermal resistance Rth
  • LFPAK Gull Wing leads:
    • Flexible leads enabling high Board Level Reliability absorbing mechanical and thermal cycling stress, unlike traditional QFN packages
    • Visual (AOI) soldering inspection, no need for expensive x-ray equipment
    • Easy solder wetting for good mechanical solder joint
  • Unique 40 V Trench 9 superjunction technology:
    • Reduced cell pitch and superjunction platform enables lower RDSon in the same footprint
    • Improved SOA and avalanche capability compared to standard TrenchMOS
    • Tight VGS(th) limits enable easy paralleling of MOSFETs

Applications

  • 12 V automotive systems
  • 48 V DC/DC systems (on 12 V secondary side)
  • Higher power motors, lamps and solenoid control
  • Reverse polarity protection
  • Ultra high performance power switching
Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-BUK7S2R0-40HJTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-BUK7S2R0-40HJTR-ND
Single FETs, MOSFETs 1727-BUK7S2R0-40HJTR-ND
N-Channel 40V 190A (Ta) 183W (Ta) Surface Mount LFPAK88 (SOT1235)

N-Channel 40V 190A (Ta) 183W (Ta) Surface Mount LFPAK88 (SOT1235)

Buy Now Datasheet
Single FETs, MOSFETs - 1727-BUK7S2R0-40HJDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-BUK7S2R0-40HJDKR-ND
Single FETs, MOSFETs 1727-BUK7S2R0-40HJDKR-ND
N-Channel 40V 190A (Ta) 183W (Ta) Surface Mount LFPAK88 (SOT1235)

N-Channel 40V 190A (Ta) 183W (Ta) Surface Mount LFPAK88 (SOT1235)

Buy Now Datasheet
Single FETs, MOSFETs - 1727-BUK7S2R0-40HJCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-BUK7S2R0-40HJCT-ND
Single FETs, MOSFETs 1727-BUK7S2R0-40HJCT-ND
N-Channel 40V 190A (Ta) 183W (Ta) Surface Mount LFPAK88 (SOT1235)

N-Channel 40V 190A (Ta) 183W (Ta) Surface Mount LFPAK88 (SOT1235)

Buy Now Datasheet
Mosfet, N-Ch, 40V, 190A, Lfpak88 Rohs Compliant Nexperia - 56AJ9601 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 40V, 190A, Lfpak88 Rohs Compliant Nexperia
56AJ9601
Mosfet, N-Ch, 40V, 190A, Lfpak88 Rohs Compliant Nexperia 56AJ9601
MOSFET, N-CH, 40V, 190A, LFPAK88 ROHS COMPLIANT: YES

MOSFET, N-CH, 40V, 190A, LFPAK88 ROHS COMPLIANT: YES

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BUK7S2R0-40HJ - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BUK7S2R0-40HJ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BUK7S2R0-40HJ
BUK7S2R0-40H/SOT1235 /LFPAK88

BUK7S2R0-40H/SOT1235/LFPAK88

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey Newark, An Avnet Company Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number BUK7S2R0-40HJ 1727-BUK7S2R0-40HJTR-ND 56AJ9601 BUK7S2R0-40HJ
Product Name N-channel 40 V, 2 mOhm standard level MOSFET in LFPAK88 Single FETs, MOSFETs Mosfet, N-Ch, 40V, 190A, Lfpak88 Rohs Compliant Nexperia Discrete Semiconductor Products - Transistors - FETs, MOSFETs
MOSFET Operating Mode Enhancement
V(BR)DSS 40 volts
IDSS 190000 milliamps
VGS(off) 20 volts
PD 183 milliwatts
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