P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Trench MOSFET technology
Extended temperature range Tj = 175 °C
Side wettable flanks for optical solder inspection
AEC-Q101 qualified
Applications
Relay driver
High-speed line driver
High-side load switch
Switching circuits
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
- Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
- Trench MOSFET technology
- Extended temperature range Tj = 175 °C
- Side wettable flanks for optical solder inspection
- AEC-Q101 qualified
Applications
- Relay driver
- High-speed line driver
- High-side load switch
- Switching circuits
