PNP Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package.
NPN complement: BST52
Features and benefits
Applications
BST60; BST61; BST62 - PNP Darlington transistors SOT-89 3-Pin Product overview: BST62,115 from Nexperia is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SOT-89. Search-friendly keywords include transistor, BJT, switching, amplification, SOT-89, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BST62,115 can be used for catalog matching and distributor lookup.
Bipolar (BJT) Transistor PNP - Darlington 80V 1A 200MHz 1.3W Surface Mount SOT-89
Bipolar (BJT) Transistor PNP - Darlington 80V 1A 200MHz 1.3W Surface Mount SOT-89
Bipolar (BJT) Transistor PNP - Darlington 80V 1A 200MHz 1.3W Surface Mount SOT-89
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1024549-BST62,115
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 200MHz
Transistor Polarity: PNP - Darlington
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-89-3
Maximum Current Collector: 1A
VCEO Maximum Collector-Emitter Breakdown Voltage: 80V
Max Vce (sat): 1.3V @ 500μA, 500mA
Collector Cut-off Current(Max): 50nA
Typical Gain (hFE) (Min): 2000 @ 500mA, 10V
Maximum Power Dissipation: 1.3W
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited
Bipolar (BJT) Single Transistor, Darlington, PNP, -80 V, 200 MHz, 1.3 W, -1 A, 2000 RoHS Compliant: Yes
Bipolar (BJT) Single Transistor, Darlington, PNP, -80 V, 200 MHz, 1.3 W, -1 A, 2000 RoHS Compliant: Yes
TRANS PNP DARL 80V 1A SOT89
| Nexperia B.V. | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Darlington Transistors | Bipolar RF Transistors | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | BST62,115 | 276-BST62,115 | 1727-BST62,115TR-ND | 1024549-BST62,115 | 34R3041 | BST62,115 |
| Product Name | PNP Darlington transistor | SOT-89 Bipolar Transistor | Single Bipolar Transistors | TRANSISTORS - Transistors (BJT) - Single - BST62,115 | Bipolar (Bjt) Single Transistor, Darlington, Pnp, -80 V, 200 Mhz, 1.3 W, -1 A, 2000 Rohs Compliant Nexperia | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| VCEO | -80 volts | 80 volts | ||||
| IC(max) | -1 milliamps | 1000 milliamps | ||||
| PD | 1.3 milliwatts | |||||
| TJ | 150 C (302 F) |
