Nexperia B.V. N-channel 60 V, 67 mΩ standard level MOSFET in LFPAK33 BUK7M67-60EX

Description
Standard level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. Features and benefits Q101 Compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True standard level gate with VGS(th) rating of greater than 1 V at 175 °C Applications 12 V automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching
  • N-channel 60 V, 67 mΩ standard level MOSFET in LFPAK33 - BUK7M67-60EX - Nexperia B.V.
    Nexperia B.V.
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  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BUK7M67-60EX - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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  • Mosfet, Aec-Q101, N-Ch, 60V, Sot-1210; Transistor Polarity Nexperia - 28AK6714 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Standard level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. Features and benefits Q101 Compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True standard level gate with VGS(th) rating of greater than 1 V at 175 °C Applications 12 V automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-channel 60 V, 67 mΩ standard level MOSFET in LFPAK33 - BUK7M67-60EX - Nexperia B.V.
Nexperia B.V.
Nijmegen, Netherlands
N-channel 60 V, 67 mΩ standard level MOSFET in LFPAK33
BUK7M67-60EX
N-channel 60 V, 67 mΩ standard level MOSFET in LFPAK33 BUK7M67-60EX
Standard level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. Features and benefits Q101 Compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 °C rating True standard level gate with VGS(th) rating of greater than 1 V at 175 °C Applications 12 V automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching

Standard level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

Features and benefits

  • Q101 Compliant
  • Repetitive avalanche rated
  • Suitable for thermally demanding environments due to 175 °C rating
  • True standard level gate with VGS(th) rating of greater than 1 V at 175 °C

Applications

  • 12 V automotive systems
  • Motors, lamps and solenoid control
  • Transmission control
  • Ultra high performance power switching
Supplier's Site Datasheet
Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs - - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Manufacturer: Nexperia USA Inc. Category: Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs Series: Automotive, AEC-Q101, TrenchMOS™ Package: Tape & Reel (TR) /Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Supplier Device Package: LFPAK33 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V

Manufacturer: Nexperia USA Inc.
Category: Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs
Series: Automotive, AEC-Q101, TrenchMOS™
Package: Tape & Reel (TR) /Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Supplier Device Package: LFPAK33
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 334 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V

Buy Now Datasheet
Single FETs, MOSFETs - 1727-2564-2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2564-2-ND
Single FETs, MOSFETs 1727-2564-2-ND
N-Channel 60V 14A (Tc) 31W (Tc) Surface Mount LFPAK33

N-Channel 60V 14A (Tc) 31W (Tc) Surface Mount LFPAK33

Buy Now Datasheet
Single FETs, MOSFETs - 1727-2564-1-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2564-1-ND
Single FETs, MOSFETs 1727-2564-1-ND
N-Channel 60V 14A (Tc) 31W (Tc) Surface Mount LFPAK33

N-Channel 60V 14A (Tc) 31W (Tc) Surface Mount LFPAK33

Buy Now Datasheet
Single FETs, MOSFETs - 1727-2564-6-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-2564-6-ND
Single FETs, MOSFETs 1727-2564-6-ND
N-Channel 60V 14A (Tc) 31W (Tc) Surface Mount LFPAK33

N-Channel 60V 14A (Tc) 31W (Tc) Surface Mount LFPAK33

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
N-Channel 60 V MOSFET Transistor
278-BUK7M67-60EX
N-Channel 60 V MOSFET Transistor 278-BUK7M67-60EX
BUK7M67-60E - N-channel 60 V, 67 mΩ standard level MOSFET in LFPAK33 Product overview: BUK7M67-60EX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BUK7M67-60EX can be used for catalog matching and distributor lookup.

BUK7M67-60E - N-channel 60 V, 67 mΩ standard level MOSFET in LFPAK33 Product overview: BUK7M67-60EX from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BUK7M67-60EX can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
BUK7M67-60EX
MOSFET BUK7M67-60EX
MOSFET BUK7M67-60E/MLFPAK/R EEL 7" Q1/

MOSFET BUK7M67-60E/MLFPAK/REEL 7" Q1/

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BUK7M67-60EX - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BUK7M67-60EX
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BUK7M67-60EX
MOSFET N-CH 60V 14A LFPAK33

MOSFET N-CH 60V 14A LFPAK33

Supplier's Site
Mosfet, N-Ch, Auto, 14A, 60V, Sot1210; Transistor Polarity Nexperia - 17AC9447 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, Auto, 14A, 60V, Sot1210; Transistor Polarity Nexperia
17AC9447
Mosfet, N-Ch, Auto, 14A, 60V, Sot1210; Transistor Polarity Nexperia 17AC9447
MOSFET, N-CH, AUTO, 14A, 60V, SOT1210; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.054ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

MOSFET, N-CH, AUTO, 14A, 60V, SOT1210; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.054ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

Supplier's Site
Mosfet, Aec-Q101, N-Ch, 60V, Sot-1210; Transistor Polarity Nexperia - 28AK6714 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Aec-Q101, N-Ch, 60V, Sot-1210; Transistor Polarity Nexperia
28AK6714
Mosfet, Aec-Q101, N-Ch, 60V, Sot-1210; Transistor Polarity Nexperia 28AK6714
MOSFET, AEC-Q101, N-CH, 60V, SOT-1210; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.054ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

MOSFET, AEC-Q101, N-CH, 60V, SOT-1210; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.054ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Nexperia B.V. Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number BUK7M67-60EX 1727-2564-2-ND 278-BUK7M67-60EX BUK7M67-60EX BUK7M67-60EX 17AC9447
Product Name N-channel 60 V, 67 mΩ standard level MOSFET in LFPAK33 Discrete Semiconductor Products -Transistors -FETs, MOSFETs -Single FETs, MOSFETs Single FETs, MOSFETs N-Channel 60 V MOSFET Transistor MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, Auto, 14A, 60V, Sot1210; Transistor Polarity Nexperia
MOSFET Operating Mode Enhancement
V(BR)DSS 60 volts
IDSS 14000 milliamps 14000 milliamps
VGS(off) 20 volts
PD 31 milliwatts
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