Nexperia B.V. TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSH202,215 BSH202,215

Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1024376-BSH202,215 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 417mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-236AB (SOT23) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 520mA (Ta) Gate-Source Threshold Voltage: 1.9V @ 1mA Max Gate Charge: 2.9nC @ 10V Max Input Capacitance: 80pF @ 24V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 900 mOhm @ 280mA, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1024376-BSH202,215 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 417mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-236AB (SOT23) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 520mA (Ta) Gate-Source Threshold Voltage: 1.9V @ 1mA Max Gate Charge: 2.9nC @ 10V Max Input Capacitance: 80pF @ 24V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 900 mOhm @ 280mA, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Sufficient
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSH202,215 - 1024376-BSH202,215 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSH202,215
1024376-BSH202,215
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSH202,215 1024376-BSH202,215
Manufacturer: Nexperia USA Inc. Win Source Part Number: 1024376-BSH202,215 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 417mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-236AB (SOT23) Dimension: TO-236-3, SC-59, SOT-23-3 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 520mA (Ta) Gate-Source Threshold Voltage: 1.9V @ 1mA Max Gate Charge: 2.9nC @ 10V Max Input Capacitance: 80pF @ 24V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 900 mOhm @ 280mA, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Sufficient

Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1024376-BSH202,215
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 417mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-236AB (SOT23)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 520mA (Ta)
Gate-Source Threshold Voltage: 1.9V @ 1mA
Max Gate Charge: 2.9nC @ 10V
Max Input Capacitance: 80pF @ 24V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 900 mOhm @ 280mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore
30V 0.52A SOT-23 MOSFET Transistor
278-BSH202,215
30V 0.52A SOT-23 MOSFET Transistor 278-BSH202,215
Trans MOSFET P-CH 30V 0.52A 3-Pin SOT-23 T/R Product overview: BSH202,215 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 0.52A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 0.52A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSH202,215 can be used for catalog matching and distributor lookup.

Trans MOSFET P-CH 30V 0.52A 3-Pin SOT-23 T/R Product overview: BSH202,215 from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 0.52A, SOT-23. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 0.52A, SOT-23, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSH202,215 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - 1727-6215-1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-6215-1-ND
Single FETs, MOSFETs 1727-6215-1-ND
P-Channel 30V 520mA (Ta) 417mW (Ta) Surface Mount TO-236AB

P-Channel 30V 520mA (Ta) 417mW (Ta) Surface Mount TO-236AB

Buy Now Datasheet
Single FETs, MOSFETs - 1727-6215-2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-6215-2-ND
Single FETs, MOSFETs 1727-6215-2-ND
P-Channel 30V 520mA (Ta) 417mW (Ta) Surface Mount TO-236AB

P-Channel 30V 520mA (Ta) 417mW (Ta) Surface Mount TO-236AB

Buy Now Datasheet
Single FETs, MOSFETs - 1727-6215-6-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
1727-6215-6-ND
Single FETs, MOSFETs 1727-6215-6-ND
P-Channel 30V 520mA (Ta) 417mW (Ta) Surface Mount TO-236AB

P-Channel 30V 520mA (Ta) 417mW (Ta) Surface Mount TO-236AB

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BSH202,215 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BSH202,215
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BSH202,215
MOSFET P-CH 30V 520MA TO236AB

MOSFET P-CH 30V 520MA TO236AB

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1024376-BSH202,215 278-BSH202,215 1727-6215-1-ND BSH202,215
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSH202,215 30V 0.52A SOT-23 MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 30 volts 30 volts
PD 417 milliwatts 417 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F)
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