Nexperia B.V. 45 V, 500 mA NPN general-purpose transistors BC817-16QB-QZ

Description
NPN general-purpose transistor in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. Table 1.Product overview Type number - Package - PNP complement Name - JEDEC - Version BC817-16QB-Q DFN1110D-3 MO340-BA SOT8015 BC807-16QB-Q BC817-25QB-Q BC807-25QB-Q BC817-40QB-Q BC807-40QB-Q Features and benefits High power dissipation capability High current Three current gain selections Suitable for Automatic Optical Inspection (AOI) of solder joint Smaller footprint compared to conventional leaded SMD packages Low package height of 0.5 mm Qualified according to AEC-Q101 and recommended for use in automotive applications Applications General-purpose switching and amplification Space restricted applications
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Description
NPN general-purpose transistor in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. Table 1.Product overview Type number - Package - PNP complement Name - JEDEC - Version BC817-16QB-Q DFN1110D-3 MO340-BA SOT8015 BC807-16QB-Q BC817-25QB-Q BC807-25QB-Q BC817-40QB-Q BC807-40QB-Q Features and benefits High power dissipation capability High current Three current gain selections Suitable for Automatic Optical Inspection (AOI) of solder joint Smaller footprint compared to conventional leaded SMD packages Low package height of 0.5 mm Qualified according to AEC-Q101 and recommended for use in automotive applications Applications General-purpose switching and amplification Space restricted applications
Request a Quote
Datasheet
Datasheet Summary
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NPN general-purpose transistor in an ultra small DFN1110D-3 (SOT8015) leadless SMD plastic package with side-wettable flanks, measuring 1.1 × 1.0 × 0.5 mm and height of 0.5 mm. Rated for a collector-emitter voltage of 45 V, collector current of 500 mA, and peak collector current of 1 A. DC current gain ranges from 100 to 250 at 1 V and 100 mA. Total power dissipation is 350 mW on a 35 μm copper PCB or 460 mW on a 70 μm copper PCB. Qualified to AEC-Q101 for automotive applications. Suitable for general-purpose switching, amplification, and space-constrained designs.

Datasheet Summary
Powered by GS/AI

NPN general-purpose transistor in an ultra small DFN1110D-3 (SOT8015) leadless SMD plastic package with side-wettable flanks, measuring 1.1 × 1.0 × 0.5 mm and height of 0.5 mm. Rated for a collector-emitter voltage of 45 V, collector current of 500 mA, and peak collector current of 1 A. DC current gain ranges from 100 to 250 at 1 V and 100 mA. Total power dissipation is 350 mW on a 35 μm copper PCB or 460 mW on a 70 μm copper PCB. Qualified to AEC-Q101 for automotive applications. Suitable for general-purpose switching, amplification, and space-constrained designs.

Suppliers

Company
Product
Description
Supplier Links
45 V, 500 mA NPN general-purpose transistors - BC817-16QB-QZ - Nexperia B.V.
Nijmegen, Netherlands
45 V, 500 mA NPN general-purpose transistors
BC817-16QB-QZ
45 V, 500 mA NPN general-purpose transistors BC817-16QB-QZ
NPN general-purpose transistor in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. Table 1.Product overview Type number - Package - PNP complement Name - JEDEC - Version BC817-16QB-Q DFN1110D-3 MO340-BA SOT8015 BC807-16QB-Q BC817-25QB-Q BC807-25QB-Q BC817-40QB-Q BC807-40QB-Q Features and benefits High power dissipation capability High current Three current gain selections Suitable for Automatic Optical Inspection (AOI) of solder joint Smaller footprint compared to conventional leaded SMD packages Low package height of 0.5 mm Qualified according to AEC-Q101 and recommended for use in automotive applications Applications General-purpose switching and amplification Space restricted applications

NPN general-purpose transistor in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks.

Table 1.Product overview

Type number

-

Package

-

PNP complement

Name

-

JEDEC

- Version

BC817-16QB-Q

DFN1110D-3

MO340-BA

SOT8015

BC807-16QB-Q

BC817-25QB-Q

BC807-25QB-Q

BC817-40QB-Q

BC807-40QB-Q

Features and benefits

  • High power dissipation capability
  • High current
  • Three current gain selections
  • Suitable for Automatic Optical Inspection (AOI) of solder joint
  • Smaller footprint compared to conventional leaded SMD packages
  • Low package height of 0.5 mm
  • Qualified according to AEC-Q101 and recommended for use in automotive applications

Applications

  • General-purpose switching and amplification
  • Space restricted applications
Supplier's Site Datasheet
Single Bipolar Transistors - 1727-BC817-16QB-QZTR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-BC817-16QB-QZTR-ND
Single Bipolar Transistors 1727-BC817-16QB-QZTR-ND
TRANS NPN 45V 0.5A DFN1110D-3

TRANS NPN 45V 0.5A DFN1110D-3

Buy Now Datasheet
Single Bipolar Transistors - 1727-BC817-16QB-QZDKR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-BC817-16QB-QZDKR-ND
Single Bipolar Transistors 1727-BC817-16QB-QZDKR-ND
TRANS NPN 45V 0.5A DFN1110D-3

TRANS NPN 45V 0.5A DFN1110D-3

Buy Now Datasheet
Single Bipolar Transistors - 1727-BC817-16QB-QZCT-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-BC817-16QB-QZCT-ND
Single Bipolar Transistors 1727-BC817-16QB-QZCT-ND
TRANS NPN 45V 0.5A DFN1110D-3

TRANS NPN 45V 0.5A DFN1110D-3

Buy Now Datasheet
 - BC817-16QB-QZ - Rochester Electronics
Newburyport, MA, United States
45 V, 500 mA NPN general-purpose transistors

45 V, 500 mA NPN general-purpose transistors

Supplier's Site Datasheet

Technical Specifications

  Nexperia B.V. DigiKey Rochester Electronics
Product Category Bipolar RF Transistors Transistors RF Transistors
Product Number BC817-16QB-QZ 1727-BC817-16QB-QZTR-ND BC817-16QB-QZ
Product Name 45 V, 500 mA NPN general-purpose transistors Single Bipolar Transistors
Package Type SOT8015 SOT8015 3-XDFN Exposed Pad SOT8015
IC(max) 500 milliamps
VCEO 45 volts
PD 350 milliwatts
hfe 250
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