PNP medium power transistors in an ultra thin DFN2020D-3 (SOT1061D) leadless SMD package, 2 mm × 2 mm × 0.65 mm, with exposed heat sink for improved thermal performance. The device is qualified to AEC-Q101 for automotive applications and supports collector currents up to 2 A and peak pulsed currents up to 3 A. Base-emitter voltage is specified up to -5 V, and collector-emitter voltage up to -20 V. Three DC current gain bins are available, with the BC69-16PAS-Q variant offering hFE between 100 and 250 at VCE = -1 V and IC = -500 mA. Thermal resistance from junction to solder point is 20 K/W.
PNP medium power transistors in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads.
NPN complement: BC68PAS-Q series
Features and benefits
Applications
| Nexperia B.V. | |
|---|---|
| Product Category | Transistors |
| Product Number | BC69-16PAS-QX |
| Product Name | 60 V, 1 A PNP medium power transistors |
| Package Type | SOT1061D SOT1061D |
