Additional Properties
Hydrolytic Sensitivity 9: reacts extremely rapidly with atmospheric moisture - may be pyrophoric - glove box or sealed system required Application Plasma polymerization yields dry process photoresist.1 Intermediate for poly(methylsilane) precursor to silicon carbide.2 Deposits SiC on Si and Ge at 400 - 500?C.3 Source for hydrogenated amorphous silicon carbide films.4 Reference 1. Dabbagh, G. et al. J. Photopolym. Sci. Tech. 1998, 11, 651. 2. Fhang, Z. et al. J. Am. Ceram. Soc. 1991, 74, 670. 3. Takatsuka, T. et al. Appl. Surf. Sci. 2000, 162, 156. 4. Lee, M. et al. in “Chemical Aspects of Electronic Ceramics Processing” Arkles, B. ed., MRS Proc. 1998, 495, 153. Safety
Packaging Under Nitrogen Volatile Carbosilane Carbosilanes are compounds in which the elements of silicon and carbon alternate in a molecular framework or polymeric backbone in an approximate ratio of 1:1. By appropriate selection of the carbosilane precursor and deposition conditions the silicon carbide framework can be shifted toward substituted silicon and diamond-like structures. Methylsilane; 1MS; Silylmethane; Monomethylsilane; Monosilylmethane CAUTION: CAN FORM EXPLOSIVE MIXTURES WITH AIR
ΔHcomb: -2,612 kJ/mol
ΔHform: -29 kJ/mol
ΔHvap: 19.3 kJ/mol
Dipole moment: 0.73 debye
Vapor pressure, -80 °C: 241 mm
Vapor pressure, 21 °C: 14 atm (210 psia)
Critical temperature: 79.3 °C
Plasma polymerization yields dry process photoresist
Intermediate for poly(methylsilane) precursor to silicon carbide
Deposits SiC on Si and Ge at 400 - 500 °C
Source for hydrogenated amorphous silicon carbide films
Additional Properties
Hydrolytic Sensitivity 9: reacts extremely rapidly with atmospheric moisture - may be pyrophoric - glove box or sealed system required
Application
Plasma polymerization yields dry process photoresist.1 Intermediate for poly(methylsilane) precursor to silicon carbide.2 Deposits SiC on Si and Ge at 400 - 500?C.3 Source for hydrogenated amorphous silicon carbide films.4
Reference
1. Dabbagh, G. et al. J. Photopolym. Sci. Tech. 1998, 11, 651. 2. Fhang, Z. et al. J. Am. Ceram. Soc. 1991, 74, 670. 3. Takatsuka, T. et al. Appl. Surf. Sci. 2000, 162, 156. 4. Lee, M. et al. in “Chemical Aspects of Electronic Ceramics Processing” Arkles, B. ed., MRS Proc. 1998, 495, 153.
Safety
Packaging Under Nitrogen
Volatile Carbosilane
Carbosilanes are compounds in which the elements of silicon and carbon alternate in a molecular framework or polymeric backbone in an approximate ratio of 1:1. By appropriate selection of the carbosilane precursor and deposition conditions the silicon carbide framework can be shifted toward substituted silicon and diamond-like structures.
Methylsilane; 1MS; Silylmethane; Monomethylsilane; Monosilylmethane
CAUTION: CAN FORM EXPLOSIVE MIXTURES WITH AIR
ΔHcomb: -2,612 kJ/mol
ΔHform: -29 kJ/mol
ΔHvap: 19.3 kJ/mol
Dipole moment: 0.73 debye
Vapor pressure, -80 °C: 241 mm
Vapor pressure, 21 °C: 14 atm (210 psia)
Critical temperature: 79.3 °C
Plasma polymerization yields dry process photoresist
Intermediate for poly(methylsilane) precursor to silicon carbide
Deposits SiC on Si and Ge at 400 - 500 °C
Source for hydrogenated amorphous silicon carbide films
