Microchip Technology, Inc. 1000V/Full bridge + series and parallel diodes/Si APTM100H45STG-Module

Description
MOSFETs Low RDSon Low input and Miller capacitance Low gate charge Avalanche energy rated Very rugged Kelvin source for easy drive Low stray inductance Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Internal thermistor for temperature monitoring (optional) Low junction to case thermal resistance RoHS Compliant Additional Features Configuration: Full bridge + series and parallel diodes VDSS (V): 1000 RDSon (mR) typ: 450 Current (A) Tc=80C: 13 Silicon type: MOSFET Package: SP4
Datasheet
Description
MOSFETs Low RDSon Low input and Miller capacitance Low gate charge Avalanche energy rated Very rugged Kelvin source for easy drive Low stray inductance Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Internal thermistor for temperature monitoring (optional) Low junction to case thermal resistance RoHS Compliant Additional Features Configuration: Full bridge + series and parallel diodes VDSS (V): 1000 RDSon (mR) typ: 450 Current (A) Tc=80C: 13 Silicon type: MOSFET Package: SP4
Datasheet

Suppliers

Company
Product
Description
Supplier Links
1000V/Full bridge + series and parallel diodes/Si - APTM100H45STG-Module - Microchip Technology, Inc.
Chandler, AZ, United States
1000V/Full bridge + series and parallel diodes/Si
APTM100H45STG-Module
1000V/Full bridge + series and parallel diodes/Si APTM100H45STG-Module
MOSFETs Low RDSon Low input and Miller capacitance Low gate charge Avalanche energy rated Very rugged Kelvin source for easy drive Low stray inductance Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Internal thermistor for temperature monitoring (optional) Low junction to case thermal resistance RoHS Compliant Additional Features Configuration: Full bridge + series and parallel diodes VDSS (V): 1000 RDSon (mR) typ: 450 Current (A) Tc=80C: 13 Silicon type: MOSFET Package: SP4
  • MOSFETs
  • Low RDSon
  • Low input and Miller capacitance
  • Low gate charge
  • Avalanche energy rated
  • Very rugged
  • Kelvin source for easy drive
  • Low stray inductance
  • Outstanding performance at high frequency operation
  • Direct mounting to heatsink (isolated package)
  • Internal thermistor for temperature monitoring (optional)
  • Low junction to case thermal resistance
  • RoHS Compliant

Additional Features

    • Configuration: Full bridge + series and parallel diodes
    • VDSS (V): 1000
    • RDSon (mR) typ: 450
    • Current (A) Tc=80C: 13
    • Silicon type: MOSFET
    • Package: SP4
Supplier's Site Datasheet

Technical Specifications

  Microchip Technology, Inc.
Product Category Semiconductor Power Modules
Product Number APTM100H45STG-Module
Product Name 1000V/Full bridge + series and parallel diodes/Si
Technology MOSFET
Unlock Full Specs
to access all available technical data

Similar Products

Intelligent Power Modules (IPM) - IM111-X3Q1B - Infineon Technologies AG
Specs
Technology Intelligent Power Module (IPM)
Configuration Full Bridge; Full-Bridge
Package QFN 12x10
View Details
IGBT Modules 2-Pack - 6th-Gen V Series Model 2MBI300VN-120S-80 - Fuji Electric Corp. of America
Specs
Technology IGBT
Package M254
Output Voltage 1200 volts
View Details
1200V/Phase leg/SiC Mosfet modules - MSCSM120AM042CT6AG-Module - Microchip Technology, Inc.
Specs
Technology MOSFET; SiC
Output Voltage 1200 volts
Output Current 394 amps
View Details
MOSFET Modules -  - Kyocera Corporation
Kyocera Corporation
Specs
Technology MOSFET
View Details