Microchip Technology, Inc. 1000V/Full bridge + series FRED and SiC parallel d APTM100H45SCTG-Module

Description
MOSFETs Low RDSon Low input and Miller capacitance Low gate charge Avalanche energy rated Very rugged Kelvin source for easy drive Low stray inductance Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Internal thermistor for temperature monitoring (optional) Low junction to case thermal resistance RoHS Compliant Additional Features Configuration: Full bridge + series FRED and SiC parallel diodes VDSS (V): 1000 RDSon (mR) typ: 450 Current (A) Tc=80C: 14 Silicon type: MOSFET Package: SP4
Datasheet
Description
MOSFETs Low RDSon Low input and Miller capacitance Low gate charge Avalanche energy rated Very rugged Kelvin source for easy drive Low stray inductance Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Internal thermistor for temperature monitoring (optional) Low junction to case thermal resistance RoHS Compliant Additional Features Configuration: Full bridge + series FRED and SiC parallel diodes VDSS (V): 1000 RDSon (mR) typ: 450 Current (A) Tc=80C: 14 Silicon type: MOSFET Package: SP4
Datasheet

Suppliers

Company
Product
Description
Supplier Links
1000V/Full bridge + series FRED and SiC parallel d - APTM100H45SCTG-Module - Microchip Technology, Inc.
Chandler, AZ, United States
1000V/Full bridge + series FRED and SiC parallel d
APTM100H45SCTG-Module
1000V/Full bridge + series FRED and SiC parallel d APTM100H45SCTG-Module
MOSFETs Low RDSon Low input and Miller capacitance Low gate charge Avalanche energy rated Very rugged Kelvin source for easy drive Low stray inductance Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Internal thermistor for temperature monitoring (optional) Low junction to case thermal resistance RoHS Compliant Additional Features Configuration: Full bridge + series FRED and SiC parallel diodes VDSS (V): 1000 RDSon (mR) typ: 450 Current (A) Tc=80C: 14 Silicon type: MOSFET Package: SP4
  • MOSFETs
  • Low RDSon
  • Low input and Miller capacitance
  • Low gate charge
  • Avalanche energy rated
  • Very rugged
  • Kelvin source for easy drive
  • Low stray inductance
  • Outstanding performance at high frequency operation
  • Direct mounting to heatsink (isolated package)
  • Internal thermistor for temperature monitoring (optional)
  • Low junction to case thermal resistance
  • RoHS Compliant

Additional Features

    • Configuration: Full bridge + series FRED and SiC parallel diodes
    • VDSS (V): 1000
    • RDSon (mR) typ: 450
    • Current (A) Tc=80C: 14
    • Silicon type: MOSFET
    • Package: SP4
Supplier's Site Datasheet

Technical Specifications

  Microchip Technology, Inc.
Product Category Semiconductor Power Modules
Product Number APTM100H45SCTG-Module
Product Name 1000V/Full bridge + series FRED and SiC parallel d
Technology MOSFET; SiC
Unlock Full Specs
to access all available technical data

Similar Products

IGBT Modules 2-Pack - 6th-Gen V Series Model 2MBI300VX-170-80 - Fuji Electric Corp. of America
Specs
Technology IGBT
Package M282
Output Voltage 1700 volts
View Details
1200V Non-Punch-Thru IGBT - IGBT-NPT-1200V - Microchip Technology, Inc.
Specs
Technology IGBT
Package SOT-227, TO-247, TO-247-MAX, TO-264, TO-264-MAX, TO-268
View Details
IGBT Modules -  - Kyocera Corporation
Kyocera Corporation
Specs
Technology IGBT
View Details