Littelfuse, Inc. 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options IXFN210N30X3

Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Features: Lowest on-resistance RDS(ON)and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages Applications: Battery chargers for light electric vehicles Synchronous rectification in switchingpower supplies Motor control DC-DC converters Uninterruptible power supplies Electric forklifts Class-D audio amplifiers Telecom systems