- Trained on our vast library of engineering resources.

Littelfuse, Inc. 300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFA26N50P3

Description
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Features: Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages Advantages: Higher efficiency High power density Easy to mount Space savings Applications: Industrial switched-mode and resonantmode power supplies Electric vehicle battery chargers AC and DC motor drives DC-DC converters Renewable-energy inverters Power Factor Correction (PFC) circuits Robotics and servo control
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFA26N50P3 - Littelfuse, Inc.
Chicago, IL, United States
300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFA26N50P3
300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFA26N50P3
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Features: Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages Advantages: Higher efficiency High power density Easy to mount Space savings Applications: Industrial switched-mode and resonantmode power supplies Electric vehicle battery chargers AC and DC motor drives DC-DC converters Renewable-energy inverters Power Factor Correction (PFC) circuits Robotics and servo control

The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Features: Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages Advantages: Higher efficiency High power density Easy to mount Space savings Applications: Industrial switched-mode and resonantmode power supplies Electric vehicle battery chargers AC and DC motor drives DC-DC converters Renewable-energy inverters Power Factor Correction (PFC) circuits Robotics and servo control

Supplier's Site Datasheet
Single FETs, MOSFETs - IXFA26N50P3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFA26N50P3-ND
Single FETs, MOSFETs IXFA26N50P3-ND
N-Channel 500V 26A (Tc) 500W (Tc) Surface Mount TO-263 (IXFA)

N-Channel 500V 26A (Tc) 500W (Tc) Surface Mount TO-263 (IXFA)

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number IXFA26N50P3 IXFA26N50P3-ND
Product Name 300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) Single FETs, MOSFETs
Polarity N-Channel N-Channel
V(BR)DSS 500 volts
IDSS 26000 milliamps
Unlock Full Specs
to access all available technical data

Similar Products

600V - 700V Power MOSFETs with HiPerFET™ Options - IXFA22N65X2 - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 650 volts
IDSS 22000 milliamps
View Details
4 suppliers
600V - 1200V NPT (Non-Punch Through) IGBTs - IXDH20N120D1 - Littelfuse, Inc.
Specs
VCES 1200 volts
VCE(on) 3 volts
IC(max) 38 amps
View Details
2 suppliers
40V - 175V Trench Gate Power MOSFETs with HiPerFET™ Options - IXFA76N15T2 - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 150 volts
IDSS 76000 milliamps
View Details
2 suppliers
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options - IXFH90N65X3 - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 650 volts
IDSS 90000 milliamps
View Details
2 suppliers