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The high power pulsed avionics transistor part number IB1011M20 is
designed for L-Band avionics systems operating at 1030 and 1090 .
While operating in class C mode under simple mode S pulse burst
conditions at VCC = 50V, this common base device supplies a minimum of
20 watts of peak pulse power. It utilizes a low loss internal input
impedance matching structure to yield maximum device gain and to ease
the implementation of external matching circuitry. The new generation
bipolar transistor geometry utilizes a gold metallization system to achieve
maximum reliability. Emitter ballast resistance is incorporated on the
active cell for optimum thermal distribution and maximum reliability. All
devices are 100% screened for large signal RF parameters.
| Integra Technologies, Inc. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | IB1011M20 |
| Product Name | BiPolar L-Band Avionics Transistor |
| Transistor Technology / Material | GaN |
