The HybridPACKTM DSC S2 is a very compact half-bridge module targeting Hybrid- and Electric Vehicle applications. The module is based on Infineon’s long-term experience developing IGBT power modules and implements the EDT2 IGBT generation. The innovative and small package is designed for Double Sided Cooling (DSC) with superior thermal performance and enables highest power density. It targets main inverters with power up to 75 kW.
Summary of Features
On-chip Current Sensor
On-chip Temperature Sensor
Low Inductive Design
Blocking voltage 750V
Low Switching Losses
Short-time extended Operation Temperature Tvj op = 175°C
Full automotive qualification according to AQG324
Benefits
Superior thermal performance
Very compact and light power module for achieving highest power density
Enables high inverter efficiency through EDT2 IGBT technology with on-chip sensors
Optimized for automotive applications with DC link voltages up to 450 V and gate driver voltage level of -8 V / +15 V
Potential Applications
Automotive Applications
Hybrid Electrical Vehicles (H)EV
Applications
EV charging
EV traction inverter
Transfer case brushless DC
Designers who used this product also designed with
1EDI2004AS | Gate Driver ICs
1EBN1001AE | Gate Driver ICs
1EDI3020AS | Gate Driver ICs
1EDI3023AS | Gate Driver ICs
1EDI2004AS | Gate Driver ICs
1EBN1001AE | Gate Driver ICs
1EDI3020AS | Gate Driver ICs
1EDI3023AS | Gate Driver ICs
1EDI2004AS | Gate Driver ICs
1EBN1001AE | Gate Driver ICs
1EDI3020AS | Gate Driver ICs
1EDI3023AS | Gate Driver ICs
The HybridPACKTM DSC S2 is a very compact half-bridge module targeting Hybrid- and Electric Vehicle applications. The module is based on Infineon’s long-term experience developing IGBT power modules and implements the EDT2 IGBT generation. The innovative and small package is designed for Double Sided Cooling (DSC) with superior thermal performance and enables highest power density. It targets main inverters with power up to 75 kW.
Summary of Features
- On-chip Current Sensor
- On-chip Temperature Sensor
- Low Inductive Design
- Blocking voltage 750V
- Low Switching Losses
- Short-time extended Operation Temperature Tvj op = 175°C
- Full automotive qualification according to AQG324
Benefits
- Superior thermal performance
- Very compact and light power module for achieving highest power density
- Enables high inverter efficiency through EDT2 IGBT technology with on-chip sensors
- Optimized for automotive applications with DC link voltages up to 450 V and gate driver voltage level of -8 V / +15 V
Potential Applications
- Automotive Applications
- Hybrid Electrical Vehicles (H)EV
Applications
- EV charging
- EV traction inverter
- Transfer case brushless DC
Designers who used this product also designed with
- 1EDI2004AS |
Gate Driver ICs
- 1EBN1001AE |
Gate Driver ICs
- 1EDI3020AS |
Gate Driver ICs
- 1EDI3023AS |
Gate Driver ICs
- 1EDI2004AS |
Gate Driver ICs
- 1EBN1001AE |
Gate Driver ICs
- 1EDI3020AS |
Gate Driver ICs
- 1EDI3023AS |
Gate Driver ICs
- 1EDI2004AS |
Gate Driver ICs
- 1EBN1001AE |
Gate Driver ICs
- 1EDI3020AS |
Gate Driver ICs
- 1EDI3023AS |
Gate Driver ICs
