Infineon Technologies AG DD500S65K3NOSA1

Description
DDXS65S - 6500 V, 500 A diodes IGBT module
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Description
DDXS65S - 6500 V, 500 A diodes IGBT module
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Datasheet
Datasheet Summary
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DD500S65K3 is a highly insulated IGBT module designed for traction drives and medium-voltage converters, featuring a 6500 V blocking voltage, 500 A continuous current, and a 1000 A repetitive peak current. It uses an AlSiC base plate for enhanced thermal cycling and has a creepage distance of 64.0 mm and clearance of 40.0 mm between terminals and heatsink, with insulation rated for 10.4 kV AC for 60 seconds. The package has a comparative tracking index >600 and operates with a storage temperature range of -55 °C to 125 °C. It meets IEC 60747, IEC 60749, and IEC 60068 qualifications for industrial applications.

Datasheet Summary
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DD500S65K3 is a highly insulated IGBT module designed for traction drives and medium-voltage converters, featuring a 6500 V blocking voltage, 500 A continuous current, and a 1000 A repetitive peak current. It uses an AlSiC base plate for enhanced thermal cycling and has a creepage distance of 64.0 mm and clearance of 40.0 mm between terminals and heatsink, with insulation rated for 10.4 kV AC for 60 seconds. The package has a comparative tracking index >600 and operates with a storage temperature range of -55 °C to 125 °C. It meets IEC 60747, IEC 60749, and IEC 60068 qualifications for industrial applications.

Suppliers

Company
Product
Description
Supplier Links
 - DD500S65K3NOSA1 - Rochester Electronics
Newburyport, MA, United States
DDXS65S - 6500 V, 500 A diodes IGBT module

DDXS65S - 6500 V, 500 A diodes IGBT module

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number DD500S65K3NOSA1
Package Type A-IHV13-4361
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