Infineon Technologies AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single BSZ130N03MSGATMA1

Description
Win Source Part Number: 1034729-BSZ130N03MSG ATMA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: OptiMOS™ Package: Tape & Reel Standard Package: 5,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.1W (Ta), 25W (Tc) Package / Case: 8-PowerTDFN Supplier Device Package: PG-TSDSON-8 Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): BSZ088N03MSGATMA1; SI4128DY-T1-GE3; IRF8707TRPBF; FDS8880; FDS8878; IRF8707GTRPBFBSZ130N 03MS G; BSZ130N03MSG; SP000313122; ECCN: EAR99 Fake Threat In the Open Market: 79 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: 2156-BSZ130N03MSGATM A1,BSZ130N03MSGINCT, BSZ130N03MSGATMA1TR, BSZ130N03MS G,BSZ130N03MSGATMA1D KR,SP000313122,BSZ13 0N03MSGINDKR,INFINFB SZ130N03MSGATMA1,BSZ 130N03MSG,BSZ130N03M SGINDKR-ND,BSZ130N03 MSGATMA1CT,BSZ130N03 MSGATMA1-ND,BSZ130N0 3MSGINTR,BSZ130N03MS GXT,BSZ130N03MSGINCT -ND,BSZ130N03MSGINTR -ND Base Product Number: BSZ130 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Description
Win Source Part Number: 1034729-BSZ130N03MSG ATMA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: OptiMOS™ Package: Tape & Reel Standard Package: 5,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.1W (Ta), 25W (Tc) Package / Case: 8-PowerTDFN Supplier Device Package: PG-TSDSON-8 Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): BSZ088N03MSGATMA1; SI4128DY-T1-GE3; IRF8707TRPBF; FDS8880; FDS8878; IRF8707GTRPBFBSZ130N 03MS G; BSZ130N03MSG; SP000313122; ECCN: EAR99 Fake Threat In the Open Market: 79 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: 2156-BSZ130N03MSGATM A1,BSZ130N03MSGINCT, BSZ130N03MSGATMA1TR, BSZ130N03MS G,BSZ130N03MSGATMA1D KR,SP000313122,BSZ13 0N03MSGINDKR,INFINFB SZ130N03MSGATMA1,BSZ 130N03MSG,BSZ130N03M SGINDKR-ND,BSZ130N03 MSGATMA1CT,BSZ130N03 MSGATMA1-ND,BSZ130N0 3MSGINTR,BSZ130N03MS GXT,BSZ130N03MSGINCT -ND,BSZ130N03MSGINTR -ND Base Product Number: BSZ130 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1034729-BSZ130N03MSGATMA1 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1034729-BSZ130N03MSGATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1034729-BSZ130N03MSGATMA1
Win Source Part Number: 1034729-BSZ130N03MSG ATMA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: OptiMOS™ Package: Tape & Reel Standard Package: 5,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.1W (Ta), 25W (Tc) Package / Case: 8-PowerTDFN Supplier Device Package: PG-TSDSON-8 Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): BSZ088N03MSGATMA1; SI4128DY-T1-GE3; IRF8707TRPBF; FDS8880; FDS8878; IRF8707GTRPBFBSZ130N 03MS G; BSZ130N03MSG; SP000313122; ECCN: EAR99 Fake Threat In the Open Market: 79 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: 2156-BSZ130N03MSGATM A1,BSZ130N03MSGINCT, BSZ130N03MSGATMA1TR, BSZ130N03MS G,BSZ130N03MSGATMA1D KR,SP000313122,BSZ13 0N03MSGINDKR,INFINFB SZ130N03MSGATMA1,BSZ 130N03MSG,BSZ130N03M SGINDKR-ND,BSZ130N03 MSGATMA1CT,BSZ130N03 MSGATMA1-ND,BSZ130N0 3MSGINTR,BSZ130N03MS GXT,BSZ130N03MSGINCT -ND,BSZ130N03MSGINTR -ND Base Product Number: BSZ130 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 1034729-BSZ130N03MSGATMA1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: OptiMOS™
Package: Tape & Reel
Standard Package: 5,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.1W (Ta), 25W (Tc)
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TSDSON-8
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): BSZ088N03MSGATMA1; SI4128DY-T1-GE3; IRF8707TRPBF; FDS8880; FDS8878; IRF8707GTRPBFBSZ130N03MS G; BSZ130N03MSG; SP000313122;
ECCN: EAR99
Fake Threat In the Open Market: 79 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: 2156-BSZ130N03MSGATMA1,BSZ130N03MSGINCT,BSZ130N03MSGATMA1TR,BSZ130N03MS G,BSZ130N03MSGATMA1DKR,SP000313122,BSZ130N03MSGINDKR,INFINFBSZ130N03MSGATMA1,BSZ130N03MSG,BSZ130N03MSGINDKR-ND,BSZ130N03MSGATMA1CT,BSZ130N03MSGATMA1-ND,BSZ130N03MSGINTR,BSZ130N03MSGXT,BSZ130N03MSGINCT-ND,BSZ130N03MSGINTR-ND
Base Product Number: BSZ130
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Buy Now Datasheet
 - BSZ130N03MSGATMA1 - Rochester Electronics
Newburyport, MA, United States
12V-300V N-Channel Power MOSFET

12V-300V N-Channel Power MOSFET

Supplier's Site Datasheet
Single FETs, MOSFETs - BSZ130N03MSGATMA1DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BSZ130N03MSGATMA1DKR-ND
Single FETs, MOSFETs BSZ130N03MSGATMA1DKR-ND
N-Channel 30V 9A (Ta), 35A (Tc) 2.1W (Ta), 25W (Tc) Surface Mount PG-TSDSON-8

N-Channel 30V 9A (Ta), 35A (Tc) 2.1W (Ta), 25W (Tc) Surface Mount PG-TSDSON-8

Buy Now Datasheet
Single FETs, MOSFETs - BSZ130N03MSGATMA1CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BSZ130N03MSGATMA1CT-ND
Single FETs, MOSFETs BSZ130N03MSGATMA1CT-ND
N-Channel 30V 9A (Ta), 35A (Tc) 2.1W (Ta), 25W (Tc) Surface Mount PG-TSDSON-8

N-Channel 30V 9A (Ta), 35A (Tc) 2.1W (Ta), 25W (Tc) Surface Mount PG-TSDSON-8

Buy Now Datasheet
Single FETs, MOSFETs - BSZ130N03MSGATMA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BSZ130N03MSGATMA1TR-ND
Single FETs, MOSFETs BSZ130N03MSGATMA1TR-ND
N-Channel 30V 9A (Ta), 35A (Tc) 2.1W (Ta), 25W (Tc) Surface Mount PG-TSDSON-8

N-Channel 30V 9A (Ta), 35A (Tc) 2.1W (Ta), 25W (Tc) Surface Mount PG-TSDSON-8

Buy Now Datasheet
Mosfet, N Ch, 30V, 35A, Pg-Tsdson; Channel Type Infineon - 60R2544 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Ch, 30V, 35A, Pg-Tsdson; Channel Type Infineon
60R2544
Mosfet, N Ch, 30V, 35A, Pg-Tsdson; Channel Type Infineon 60R2544
MOSFET, N CH, 30V, 35A, PG-TSDSON; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:35A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes

MOSFET, N CH, 30V, 35A, PG-TSDSON; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:35A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1V RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BSZ130N03MSGATMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BSZ130N03MSGATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BSZ130N03MSGATMA1
MOSFET N-CH 30V 9A/35A 8TSDSON

MOSFET N-CH 30V 9A/35A 8TSDSON

Supplier's Site

Technical Specifications

  Win Source Electronics Rochester Electronics DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1034729-BSZ130N03MSGATMA1 BSZ130N03MSGATMA1 BSZ130N03MSGATMA1DKR-ND 60R2544 BSZ130N03MSGATMA1
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Mosfet, N Ch, 30V, 35A, Pg-Tsdson; Channel Type Infineon Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel
PD 2100 to 25000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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