Infineon Technologies AG N-Channel Power MOSFET BSZ009NE2LS5

Description
Best-in-class OptiMOS™ 5 25V power MOSFET in high performance PQFN 3.3x3.3mm package for further performance improvement Infineon extends its’ high performance MOSFET portfolio with BSZ009NE2LS5 OptiMOS™ 5 25V power MOSFET in the small PQFN 3.3x3x3 mm package. This device offers industry’s lowest RDS(on) of 0.9mΩ at 10V and is targeting mainly Or-ing and load switching applications. Key features Best-in-class (BIC) product Small PQFN 3.3 x 3.3mm package Dedicated Or-ing product Monolithically integrated Schottky-like diode Ultra low charges Ideal for high performance applications RoHS compliant - halogen free Key benefits Highest efficiency Less paralleling required Very low voltage overshoot Reduced need for snubber circuit System cost reduction Small package for highest PCB layout routing flexibility Target applications Or-ing switches
  • N-Channel Power MOSFET - BSZ009NE2LS5 - Infineon Technologies AG
    Infineon Technologies AG
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Description
Best-in-class OptiMOS™ 5 25V power MOSFET in high performance PQFN 3.3x3.3mm package for further performance improvement Infineon extends its’ high performance MOSFET portfolio with BSZ009NE2LS5 OptiMOS™ 5 25V power MOSFET in the small PQFN 3.3x3x3 mm package. This device offers industry’s lowest RDS(on) of 0.9mΩ at 10V and is targeting mainly Or-ing and load switching applications. Key features Best-in-class (BIC) product Small PQFN 3.3 x 3.3mm package Dedicated Or-ing product Monolithically integrated Schottky-like diode Ultra low charges Ideal for high performance applications RoHS compliant - halogen free Key benefits Highest efficiency Less paralleling required Very low voltage overshoot Reduced need for snubber circuit System cost reduction Small package for highest PCB layout routing flexibility Target applications Or-ing switches
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Datasheet
Datasheet Summary
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BSZ009NE2LS5 is an N-channel power MOSFET optimized for e-fuse and ORing applications, featuring a maximum drain-source voltage of 25 V and a typical on-resistance of 0.9 mΩ at 25 °C. It is housed in a PG-TSDSON-8 FL package measuring 3.20 mm to 3.40 mm by 3.20 mm to 3.40 mm. The device supports a continuous drain current of 223 A, has an avalanche energy rating of 160 mJ, and complies with RoHS and IEC 61249-2-21 halogen-free standards. It is fully qualified for industrial applications according to JEDEC.

Datasheet Summary
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BSZ009NE2LS5 is an N-channel power MOSFET optimized for e-fuse and ORing applications, featuring a maximum drain-source voltage of 25 V and a typical on-resistance of 0.9 mΩ at 25 °C. It is housed in a PG-TSDSON-8 FL package measuring 3.20 mm to 3.40 mm by 3.20 mm to 3.40 mm. The device supports a continuous drain current of 223 A, has an avalanche energy rating of 160 mJ, and complies with RoHS and IEC 61249-2-21 halogen-free standards. It is fully qualified for industrial applications according to JEDEC.

Suppliers

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N-Channel Power MOSFET - BSZ009NE2LS5 - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
BSZ009NE2LS5
N-Channel Power MOSFET BSZ009NE2LS5
Best-in-class OptiMOS™ 5 25V power MOSFET in high performance PQFN 3.3x3.3mm package for further performance improvement Infineon extends its’ high performance MOSFET portfolio with BSZ009NE2LS5 OptiMOS™ 5 25V power MOSFET in the small PQFN 3.3x3x3 mm package. This device offers industry’s lowest RDS(on) of 0.9mΩ at 10V and is targeting mainly Or-ing and load switching applications. Key features Best-in-class (BIC) product Small PQFN 3.3 x 3.3mm package Dedicated Or-ing product Monolithically integrated Schottky-like diode Ultra low charges Ideal for high performance applications RoHS compliant - halogen free Key benefits Highest efficiency Less paralleling required Very low voltage overshoot Reduced need for snubber circuit System cost reduction Small package for highest PCB layout routing flexibility Target applications Or-ing switches

Best-in-class OptiMOS™ 5 25V power MOSFET in high performance PQFN 3.3x3.3mm package for further performance improvement

Infineon extends its’ high performance MOSFET portfolio with BSZ009NE2LS5 OptiMOS™ 5 25V power MOSFET in the small PQFN 3.3x3x3 mm package. This device offers industry’s lowest RDS(on) of 0.9mΩ at 10V and is targeting mainly Or-ing and load switching applications.


Key features

  • Best-in-class (BIC) product
  • Small PQFN 3.3 x 3.3mm package
  • Dedicated Or-ing product
  • Monolithically integrated Schottky-like diode
  • Ultra low charges
  • Ideal for high performance applications
  • RoHS compliant - halogen free

Key benefits

  • Highest efficiency
  • Less paralleling required
  • Very low voltage overshoot
  • Reduced need for snubber circuit
  • System cost reduction
  • Small package for highest PCB layout routing flexibility

Target applications

  • Or-ing switches
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number BSZ009NE2LS5
Product Name N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 9.00E-4 ohms
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