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Infineon Technologies AG Small Signal/Small Power MOSFET BSP716N

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Small Signal/Small Power MOSFET - BSP716N - Infineon Technologies AG
Neubiberg, Germany
Small Signal/Small Power MOSFET
BSP716N
Small Signal/Small Power MOSFET BSP716N
N-Channel Small Signal MOSFET 75 V in SOT-223 package Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety of applications including LED lighting, ADAS, body control units, SMPS and motor control. Summary of Features Enhancement mode Logic level Avalanche rated Fast switching Dv/dt rated Pb-free lead-plating RoHS compliant, halogen-free Qualified according to automotive standards PPAP capable Benefits Low RDS(on) provides higher efficiency and extends battery life Small packages save PCB space Best-in-class quality and reliability Potential Applications Automotive Lighting Battery management Load switch DC-DC eMobility Motor control Onboard charger Telecom

N-Channel Small Signal MOSFET 75 V in SOT-223 package

Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety of applications including LED lighting, ADAS, body control units, SMPS and motor control.


Summary of Features

  • Enhancement mode
  • Logic level
  • Avalanche rated
  • Fast switching
  • Dv/dt rated
  • Pb-free lead-plating
  • RoHS compliant, halogen-free
  • Qualified according to automotive standards
  • PPAP capable

Benefits

  • Low RDS(on) provides higher efficiency and extends battery life
  • Small packages save PCB space
  • Best-in-class quality and reliability

Potential Applications

  • Automotive
  • Lighting
  • Battery management
  • Load switch
  • DC-DC
  • eMobility
  • Motor control
  • Onboard charger
  • Telecom
Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP716N - 201418-BSP716N - Win Source Electronics
Yishun, Singapore
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP716N
201418-BSP716N
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP716N 201418-BSP716N
Manufacturer: Infineon Technologies Win Source Part Number: 201418-BSP716N Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.8W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-SOT223-4 Dimension: TO-261-4, TO-261AA Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 2.3A (Ta) Gate-Source Threshold Voltage: 1.8V @ 218μA Max Gate Charge: 13.1nC @ 10V Max Input Capacitance: 315pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 160 mOhm @ 2.3A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 201418-BSP716N
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.8W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-SOT223-4
Dimension: TO-261-4, TO-261AA
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 2.3A (Ta)
Gate-Source Threshold Voltage: 1.8V @ 218μA
Max Gate Charge: 13.1nC @ 10V
Max Input Capacitance: 315pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 160 mOhm @ 2.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Sufficient

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG Win Source Electronics
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET)
Product Number BSP716N 201418-BSP716N
Product Name Small Signal/Small Power MOSFET TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSP716N
Polarity N-Channel; N N-Channel; N-Channel
Transistor Technology / Material Si/SiC
Operating Mode Enhancement
rDS(on) 0.1600 ohms
TJ -55 C (-67 F) -55 to 150 C (-67 to 302 F)
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