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Infineon Technologies AG Small Signal/Small Power MOSFET BSP317P

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Product
Description
Supplier Links
Small Signal/Small Power MOSFET - BSP317P - Infineon Technologies AG
Neubiberg, Germany
Small Signal/Small Power MOSFET
BSP317P
Small Signal/Small Power MOSFET BSP317P
P-channel enhancement mode Field-Effect Transistor (FET), -250 V, SOT-223 Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety of applications including LED lighting, ADAS, body control units, SMPS and motor control. Summary of Features Enhancement mode Logic level Avalanche rated Fast switching Dv/dt rated Pb-free lead-plating RoHS compliant, halogen-free Qualified according to automotive standards PPAP capable Benefits Low RDS(on) provides higher efficiency and extends battery life Small packages save PCB space Best-in-class quality and reliability Potential Applications Automotive Lighting Battery management Load switch DC-DC eMobility Motor control Onboard charger Telecom Designers who used this product also designed with BTS5215L | Classic PROFET™ 24V | Automotive Smart High-Side Switch ITS5215L | PROFET™ | Industrial Smart High-Side Switch TLE5501 E0001 | Angle sensors TLE5014C16 | Angle sensors BSZ033NE2LS5 | N-Channel Power MOSFET BSZ099N06LS5 | N-Channel Power MOSFET BAS70-02V | Schottky Diodes BTS3800SL | Classic HITFET™ 12V | Automotive Low-Side Switch IPB072N15N3 G | N-Channel Power MOSFET BCR 420U E6433 | Linear LED Driver IC BTS4140N | Classic PROFET™ 24V | Automotive Smart High-Side Switch BTS4141N | Classic PROFET™ 24V | Automotive Smart High-Side Switch BTS4142N | Classic PROFET™ 24V | Automotive Smart High-Side Switch BTS5210G | Classic PROFET™ 12V | Automotive Smart High-Side Switch BTS5020-2EKA | PROFET™ + 12V | Automotive Smart High-Side Switch BTS5045-1EJA | PROFET™ + 12V | Automotive Smart High-Side Switch BTS5045-2EKA | PROFET™ + 12V | Automotive Smart High-Side Switch BTS5215L | Classic PROFET™ 24V | Automotive Smart High-Side Switch ITS5215L | PROFET™ | Industrial Smart High-Side Switch TLE5501 E0001 | Angle sensors TLE5014C16 | Angle sensors BSZ033NE2LS5 | N-Channel Power MOSFET BSZ099N06LS5 | N-Channel Power MOSFET BAS70-02V | Schottky Diodes BTS3800SL | Classic HITFET™ 12V | Automotive Low-Side Switch 1 2 3 4 5

P-channel enhancement mode Field-Effect Transistor (FET), -250 V, SOT-223

Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety of applications including LED lighting, ADAS, body control units, SMPS and motor control.


Summary of Features

  • Enhancement mode
  • Logic level
  • Avalanche rated
  • Fast switching
  • Dv/dt rated
  • Pb-free lead-plating
  • RoHS compliant, halogen-free
  • Qualified according to automotive standards
  • PPAP capable

Benefits

  • Low RDS(on) provides higher efficiency and extends battery life
  • Small packages save PCB space
  • Best-in-class quality and reliability

Potential Applications

  • Automotive
  • Lighting
  • Battery management
  • Load switch
  • DC-DC
  • eMobility
  • Motor control
  • Onboard charger
  • Telecom

Designers who used this product also designed with


  • BTS5215L |
    Classic PROFET™ 24V | Automotive Smart High-Side Switch
  • ITS5215L |
    PROFET™ | Industrial Smart High-Side Switch
  • TLE5501 E0001 |
    Angle sensors
  • TLE5014C16 |
    Angle sensors
  • BSZ033NE2LS5 |
    N-Channel Power MOSFET
  • BSZ099N06LS5 |
    N-Channel Power MOSFET
  • BAS70-02V |
    Schottky Diodes
  • BTS3800SL |
    Classic HITFET™ 12V | Automotive Low-Side Switch
  • IPB072N15N3 G |
    N-Channel Power MOSFET
  • BCR 420U E6433 |
    Linear LED Driver IC
  • BTS4140N |
    Classic PROFET™ 24V | Automotive Smart High-Side Switch
  • BTS4141N |
    Classic PROFET™ 24V | Automotive Smart High-Side Switch
  • BTS4142N |
    Classic PROFET™ 24V | Automotive Smart High-Side Switch
  • BTS5210G |
    Classic PROFET™ 12V | Automotive Smart High-Side Switch
  • BTS5020-2EKA |
    PROFET™ + 12V | Automotive Smart High-Side Switch
  • BTS5045-1EJA |
    PROFET™ + 12V | Automotive Smart High-Side Switch
  • BTS5045-2EKA |
    PROFET™ + 12V | Automotive Smart High-Side Switch
  • BTS5215L |
    Classic PROFET™ 24V | Automotive Smart High-Side Switch
  • ITS5215L |
    PROFET™ | Industrial Smart High-Side Switch
  • TLE5501 E0001 |
    Angle sensors
  • TLE5014C16 |
    Angle sensors
  • BSZ033NE2LS5 |
    N-Channel Power MOSFET
  • BSZ099N06LS5 |
    N-Channel Power MOSFET
  • BAS70-02V |
    Schottky Diodes
  • BTS3800SL |
    Classic HITFET™ 12V | Automotive Low-Side Switch

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Supplier's Site Datasheet
END - OF - LIFE - BSP317P - 1154850-BSP317P - Win Source Electronics
Yishun, Singapore
END - OF - LIFE - BSP317P
1154850-BSP317P
END - OF - LIFE - BSP317P 1154850-BSP317P
Manufacturer: Infineon Technologies Win Source Part Number: 1154850-BSP317P Family Name: BSP317P Manufacturer Homepage: www.infineon.com Alternative Parts (Cross-Reference): FQT2P25; FQT2P25TF_NL; SFM9214TF; Introduction Date: July 17, 2002 ECCN: EAR99 Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 1154850-BSP317P
Family Name: BSP317P
Manufacturer Homepage: www.infineon.com
Alternative Parts (Cross-Reference): FQT2P25; FQT2P25TF_NL; SFM9214TF;
Introduction Date: July 17, 2002
ECCN: EAR99
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited

Supplier's Site
 - 7532813 - RS Components, Ltd.
Corby, Northants, United Kingdom
The Infineon SIPMOS^® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry. · AEC Q101 Qualified (Please refer to datasheet). · Pb-free lead plating, RoHS compliant Channel Type = P Maximum Continuous Drain Current = 430 mA Maximum Drain Source Voltage = 250 V Maximum Drain Source Resistance = 5 Ohms Maximum Gate Threshold Voltage = 2V Minimum Gate Threshold Voltage = 1V Maximum Gate Source Voltage = -20 V, +20 V Package Type = SOT-223 Mounting Type = Surface Mount Pin Count = 3+Tab

The Infineon SIPMOS^® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
· AEC Q101 Qualified (Please refer to datasheet). · Pb-free lead plating, RoHS compliant
Channel Type = P
Maximum Continuous Drain Current = 430 mA
Maximum Drain Source Voltage = 250 V
Maximum Drain Source Resistance = 5 Ohms
Maximum Gate Threshold Voltage = 2V
Minimum Gate Threshold Voltage = 1V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = SOT-223
Mounting Type = Surface Mount
Pin Count = 3+Tab

Supplier's Site
 - 7532813P - RS Components, Ltd.
Corby, Northants, United Kingdom
The Infineon SIPMOS^® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry. · AEC Q101 Qualified (Please refer to datasheet). · Pb-free lead plating, RoHS compliant Channel Type = P Maximum Continuous Drain Current = 430 mA Maximum Drain Source Voltage = 250 V Maximum Drain Source Resistance = 5 Ohms Maximum Gate Threshold Voltage = 2V Minimum Gate Threshold Voltage = 1V Maximum Gate Source Voltage = -20 V, +20 V Package Type = SOT-223 Mounting Type = Surface Mount Pin Count = 3+Tab Delivery on production packaging - Reel. This product is non-returnable.

The Infineon SIPMOS^® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
· AEC Q101 Qualified (Please refer to datasheet). · Pb-free lead plating, RoHS compliant
Channel Type = P
Maximum Continuous Drain Current = 430 mA
Maximum Drain Source Voltage = 250 V
Maximum Drain Source Resistance = 5 Ohms
Maximum Gate Threshold Voltage = 2V
Minimum Gate Threshold Voltage = 1V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = SOT-223
Mounting Type = Surface Mount
Pin Count = 3+Tab
Delivery on production packaging - Reel. This product is non-returnable.

Supplier's Site
 - 9114969 - RS Components, Ltd.
Corby, Northants, United Kingdom
The Infineon SIPMOS^® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry. · AEC Q101 Qualified (Please refer to datasheet). · Pb-free lead plating, RoHS compliant Channel Type = P Maximum Continuous Drain Current = 430 mA Maximum Drain Source Voltage = 250 V Maximum Drain Source Resistance = 5 Ohms Maximum Gate Threshold Voltage = 2V Minimum Gate Threshold Voltage = 1V Maximum Gate Source Voltage = -20 V, +20 V Package Type = SOT-223 Mounting Type = Surface Mount Pin Count = 3+Tab

The Infineon SIPMOS^® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.
· AEC Q101 Qualified (Please refer to datasheet). · Pb-free lead plating, RoHS compliant
Channel Type = P
Maximum Continuous Drain Current = 430 mA
Maximum Drain Source Voltage = 250 V
Maximum Drain Source Resistance = 5 Ohms
Maximum Gate Threshold Voltage = 2V
Minimum Gate Threshold Voltage = 1V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = SOT-223
Mounting Type = Surface Mount
Pin Count = 3+Tab

Supplier's Site

Technical Specifications

  Infineon Technologies AG Win Source Electronics RS Components, Ltd.
Product Category Power MOSFET RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number BSP317P 1154850-BSP317P 7532813
Product Name Small Signal/Small Power MOSFET END - OF - LIFE - BSP317P
Polarity P-Channel; P P-Channel
Transistor Technology / Material Si/SiC
Operating Mode Enhancement
rDS(on) 4 ohms 5 ohms
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