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Infineon Technologies AG N-Channel Power MOSFET BSC12DN20NS3-G

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N-Channel Power MOSFET - BSC12DN20NS3-G - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
BSC12DN20NS3-G
N-Channel Power MOSFET BSC12DN20NS3-G
Infineon's 200V OptiMOS™ products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems,DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. Summary of Features Industry’s lowest R DS(on) Lowest Q g and Q gd World’s lowest FOM RoHS compliant − halogen free MSL 1 rated Benefits Highest efficiency Highest power density Lowest board space consumption Minimal device paralleling required System cost improvement Enviromentally friendly Easy-to-design-in products Potential Applications Synchronous rectification for AC-DC SMPS Motor control for 48V–110V systems Isolated DC-DC converters Lighting for 110V AC networks HID lamps Class D audio amplifiers Uninterruptable power supplies (UPS) LED lighting power supply Designers who used this product also designed with BSC900N20NS3 G | N-Channel Power MOSFET BSC350N20NSFD | N-Channel Power MOSFET IPD70R600P7S | 500V-950V CoolMOS™ N-Channel Power MOSFET IPA60R180P7S | 500V-950V CoolMOS™ N-Channel Power MOSFET 1EDB8275F | Gate Driver ICs 6EDL04N02PR | Gate Driver ICs IRS2007S | Gate Driver ICs IRS21271S | Gate Driver ICs IRS4427S | Gate Driver ICs 1ED44173N01B | Gate Driver ICs 2EDB8259K | Gate Driver ICs IRS20752L | Gate Driver ICs BSC900N20NS3 G | N-Channel Power MOSFET BSC350N20NSFD | N-Channel Power MOSFET IPD70R600P7S | 500V-950V CoolMOS™ N-Channel Power MOSFET IPA60R180P7S | 500V-950V CoolMOS™ N-Channel Power MOSFET 1EDB8275F | Gate Driver ICs 6EDL04N02PR | Gate Driver ICs IRS2007S | Gate Driver ICs IRS21271S | Gate Driver ICs 1 2 3

Infineon's 200V OptiMOS™ products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems,DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives.


Summary of Features

  • Industry’s lowest R DS(on)
  • Lowest Q g and Q gd
  • World’s lowest FOM RoHS compliant − halogen free MSL 1 rated

Benefits

  • Highest efficiency
  • Highest power density
  • Lowest board space consumption
  • Minimal device paralleling required
  • System cost improvement
  • Enviromentally friendly
  • Easy-to-design-in products

Potential Applications

  • Synchronous rectification for AC-DC SMPS
  • Motor control for 48V–110V systems
  • Isolated DC-DC converters
  • Lighting for 110V AC networks
  • HID lamps
  • Class D audio amplifiers
  • Uninterruptable power supplies (UPS)
  • LED lighting power supply

Designers who used this product also designed with


  • BSC900N20NS3 G |
    N-Channel Power MOSFET
  • BSC350N20NSFD |
    N-Channel Power MOSFET
  • IPD70R600P7S |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPA60R180P7S |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • 1EDB8275F |
    Gate Driver ICs
  • 6EDL04N02PR |
    Gate Driver ICs
  • IRS2007S |
    Gate Driver ICs
  • IRS21271S |
    Gate Driver ICs
  • IRS4427S |
    Gate Driver ICs
  • 1ED44173N01B |
    Gate Driver ICs
  • 2EDB8259K |
    Gate Driver ICs
  • IRS20752L |
    Gate Driver ICs
  • BSC900N20NS3 G |
    N-Channel Power MOSFET
  • BSC350N20NSFD |
    N-Channel Power MOSFET
  • IPD70R600P7S |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPA60R180P7S |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • 1EDB8275F |
    Gate Driver ICs
  • 6EDL04N02PR |
    Gate Driver ICs
  • IRS2007S |
    Gate Driver ICs
  • IRS21271S |
    Gate Driver ICs

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number BSC12DN20NS3-G
Product Name N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.1250 ohms
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