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Infineon Technologies AG N-Channel Power MOSFET BSC0911ND

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Product
Description
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N-Channel Power MOSFET - BSC0911ND - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
BSC0911ND
N-Channel Power MOSFET BSC0911ND
With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. Available in halfbridge configuration (power stage 5x6). Benefits Save overall system costs by reducing the number of phases in multiphase converters Reduce power losses and increase efficiency for all load conditions Save space with smallest packages like CanPAK™, S3O8 or system in package solution Minimize EMI in the system making external snubber networks obsolete and the products easy to design-in Potential Applications Onboard charger Mainboard Notebook DC-DC VRD/VRM LED Motor control Applications Servo motor drive and control Designers who used this product also designed with SLB 9670VQ2.0 | OPTIGA™ TPM - Trusted Platform Module IRF7425 | P-Channel Power MOSFET BSL316C | Dual MOSFET IRLML2060 | N-Channel Power MOSFET IRLML2246 | P-Channel Power MOSFET 1ED44173N01B | Gate Driver ICs 1EDI60N12AF | Gate Driver ICs 2EDN7534B | Gate Driver ICs 6ED2742S01Q | Gate Driver ICs IRS21271S | Gate Driver ICs IRS4427S | Gate Driver ICs 1EDN7550B | Gate Driver ICs IRS10752L | Gate Driver ICs BSZ019N03LS | N-Channel Power MOSFET IRF9310 | P-Channel Power MOSFET BSC0923NDI | N-Channel Power MOSFET SLB 9670VQ2.0 | OPTIGA™ TPM - Trusted Platform Module IRF7425 | P-Channel Power MOSFET BSL316C | Dual MOSFET IRLML2060 | N-Channel Power MOSFET IRLML2246 | P-Channel Power MOSFET 1ED44173N01B | Gate Driver ICs 1EDI60N12AF | Gate Driver ICs 2EDN7534B | Gate Driver ICs 1 2 3 4

With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. Available in halfbridge configuration (power stage 5x6).


Benefits

  • Save overall system costs by reducing the number of phases in multiphase converters
  • Reduce power losses and increase efficiency for all load conditions
  • Save space with smallest packages like CanPAK™, S3O8 or system in package solution
  • Minimize EMI in the system making external snubber networks obsolete and the products easy to design-in

Potential Applications

  • Onboard charger
  • Mainboard
  • Notebook
  • DC-DC
  • VRD/VRM
  • LED
  • Motor control

Applications

  • Servo motor drive and control

Designers who used this product also designed with


  • SLB 9670VQ2.0 |
    OPTIGA™ TPM - Trusted Platform Module
  • IRF7425 |
    P-Channel Power MOSFET
  • BSL316C |
    Dual MOSFET
  • IRLML2060 |
    N-Channel Power MOSFET
  • IRLML2246 |
    P-Channel Power MOSFET
  • 1ED44173N01B |
    Gate Driver ICs
  • 1EDI60N12AF |
    Gate Driver ICs
  • 2EDN7534B |
    Gate Driver ICs
  • 6ED2742S01Q |
    Gate Driver ICs
  • IRS21271S |
    Gate Driver ICs
  • IRS4427S |
    Gate Driver ICs
  • 1EDN7550B |
    Gate Driver ICs
  • IRS10752L |
    Gate Driver ICs
  • BSZ019N03LS |
    N-Channel Power MOSFET
  • IRF9310 |
    P-Channel Power MOSFET
  • BSC0923NDI |
    N-Channel Power MOSFET
  • SLB 9670VQ2.0 |
    OPTIGA™ TPM - Trusted Platform Module
  • IRF7425 |
    P-Channel Power MOSFET
  • BSL316C |
    Dual MOSFET
  • IRLML2060 |
    N-Channel Power MOSFET
  • IRLML2246 |
    P-Channel Power MOSFET
  • 1ED44173N01B |
    Gate Driver ICs
  • 1EDI60N12AF |
    Gate Driver ICs
  • 2EDN7534B |
    Gate Driver ICs

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Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC0911ND - 1154695-BSC0911ND - Win Source Electronics
Yishun, Singapore
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC0911ND
1154695-BSC0911ND
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC0911ND 1154695-BSC0911ND
Manufacturer: Infineon Technologies Win Source Part Number: 1154695-BSC0911ND Manufacturer Homepage: www.infineon.com Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 1154695-BSC0911ND
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 25V 40A TISON-8

MOSFET N-Ch 25V 40A TISON-8

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG Win Source Electronics VAST STOCK CO., LIMITED
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number BSC0911ND 1154695-BSC0911ND BSC0911ND
Product Name N-Channel Power MOSFET TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC0911ND MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0012 to 0.0032 ohms
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