Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC033N08NS5SC BSC033N08NS5SC

Description
OptiMOS™ 5 power MOSFETs 80 V in SuperSO8 DSC package with dual-side cooling for enhanced thermal performance OptiMOS™ 5 power MOSFETs 80 V in SuperSO8 DSC (dual-side cooling) package offer all thermal management benefits of dual-side cooling solutions with industry-standard footprint. SuperSO8 DSC allows excellent thermal performance with two paths for heat dissipation (bottom through PCB + top through exposed clip and heatsink). About 30% of the heat generated on the MOSFET die is transferred through the top and less heat is transferred to the PCB. Thus, either the PCB runs cooler at the same power dissipation for improved reliability, or more power can be handled by the MOSFET for higher power density. Summary of Features High performance silicon technology Low top-side RthJC (0.86 K/W) Package rated to TJmax=175ºC Industry-standard footprint, compatible with SuperSO8 and PQFN 5x6 products Benefits Lower conduction losses and switching losses for higher system efficiency Improved heat dissipation for high power density and improved reliability Superior power handling capability and ruggedness for longer lifetime Drop-in replacement for SuperSO8 and PQFN 5x6 easy to design-in, no PCB layout change Potential Applications Power and gardening tools Service robots and automated guided vehicles (AGVs) Telecom power supplies Server power supplies Applications Energy Storage Systems
  • Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC033N08NS5SC - BSC033N08NS5SC - Infineon Technologies AG
    Infineon Technologies AG
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Description
OptiMOS™ 5 power MOSFETs 80 V in SuperSO8 DSC package with dual-side cooling for enhanced thermal performance OptiMOS™ 5 power MOSFETs 80 V in SuperSO8 DSC (dual-side cooling) package offer all thermal management benefits of dual-side cooling solutions with industry-standard footprint. SuperSO8 DSC allows excellent thermal performance with two paths for heat dissipation (bottom through PCB + top through exposed clip and heatsink). About 30% of the heat generated on the MOSFET die is transferred through the top and less heat is transferred to the PCB. Thus, either the PCB runs cooler at the same power dissipation for improved reliability, or more power can be handled by the MOSFET for higher power density. Summary of Features High performance silicon technology Low top-side RthJC (0.86 K/W) Package rated to TJmax=175ºC Industry-standard footprint, compatible with SuperSO8 and PQFN 5x6 products Benefits Lower conduction losses and switching losses for higher system efficiency Improved heat dissipation for high power density and improved reliability Superior power handling capability and ruggedness for longer lifetime Drop-in replacement for SuperSO8 and PQFN 5x6 easy to design-in, no PCB layout change Potential Applications Power and gardening tools Service robots and automated guided vehicles (AGVs) Telecom power supplies Server power supplies Applications Energy Storage Systems
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Datasheet
Datasheet Summary
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BSC033N08NS5SC is an 80 V N-channel MOSFET in a PG-WSON-8 package, optimized for synchronous rectification in server and desktop power supplies. It has a maximum drain current of 144 A at 25°C case temperature and a maximum on-resistance of 3.3 mΩ. The device supports dual-side cooling with junction-to-case thermal resistance of 0.6 to 1.1 K/W on the bottom and 0.43 to 0.86 K/W on the top. It is rated for operation up to 175°C junction temperature and is fully compliant with JEDEC industrial standards. The package includes a 100% avalanche tested design and is RoHS-compliant with halogen-free materials per IEC61249-2-21.

Datasheet Summary
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BSC033N08NS5SC is an 80 V N-channel MOSFET in a PG-WSON-8 package, optimized for synchronous rectification in server and desktop power supplies. It has a maximum drain current of 144 A at 25°C case temperature and a maximum on-resistance of 3.3 mΩ. The device supports dual-side cooling with junction-to-case thermal resistance of 0.6 to 1.1 K/W on the bottom and 0.43 to 0.86 K/W on the top. It is rated for operation up to 175°C junction temperature and is fully compliant with JEDEC industrial standards. The package includes a 100% avalanche tested design and is RoHS-compliant with halogen-free materials per IEC61249-2-21.

Suppliers

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Supplier Links
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC033N08NS5SC - BSC033N08NS5SC - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC033N08NS5SC
BSC033N08NS5SC
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC033N08NS5SC BSC033N08NS5SC
OptiMOS™ 5 power MOSFETs 80 V in SuperSO8 DSC package with dual-side cooling for enhanced thermal performance OptiMOS™ 5 power MOSFETs 80 V in SuperSO8 DSC (dual-side cooling) package offer all thermal management benefits of dual-side cooling solutions with industry-standard footprint. SuperSO8 DSC allows excellent thermal performance with two paths for heat dissipation (bottom through PCB + top through exposed clip and heatsink). About 30% of the heat generated on the MOSFET die is transferred through the top and less heat is transferred to the PCB. Thus, either the PCB runs cooler at the same power dissipation for improved reliability, or more power can be handled by the MOSFET for higher power density. Summary of Features High performance silicon technology Low top-side RthJC (0.86 K/W) Package rated to TJmax=175ºC Industry-standard footprint, compatible with SuperSO8 and PQFN 5x6 products Benefits Lower conduction losses and switching losses for higher system efficiency Improved heat dissipation for high power density and improved reliability Superior power handling capability and ruggedness for longer lifetime Drop-in replacement for SuperSO8 and PQFN 5x6 easy to design-in, no PCB layout change Potential Applications Power and gardening tools Service robots and automated guided vehicles (AGVs) Telecom power supplies Server power supplies Applications Energy Storage Systems

OptiMOS™ 5 power MOSFETs 80 V in SuperSO8 DSC package with dual-side cooling for enhanced thermal performance

OptiMOS™ 5 power MOSFETs 80 V in SuperSO8 DSC (dual-side cooling) package offer all thermal management benefits of dual-side cooling solutions with industry-standard footprint.

SuperSO8 DSC allows excellent thermal performance with two paths for heat dissipation (bottom through PCB + top through exposed clip and heatsink).

About 30% of the heat generated on the MOSFET die is transferred through the top and less heat is transferred to the PCB. Thus,

  • either the PCB runs cooler at the same power dissipation for improved reliability,
  • or more power can be handled by the MOSFET for higher power density.

Summary of Features

  • High performance silicon technology
  • Low top-side RthJC (0.86 K/W)
  • Package rated to TJmax=175ºC
  • Industry-standard footprint, compatible with SuperSO8 and PQFN 5x6 products

Benefits

  • Lower conduction losses and switching losses for higher system efficiency
  • Improved heat dissipation for high power density and improved reliability
  • Superior power handling capability and ruggedness for longer lifetime
  • Drop-in replacement for SuperSO8 and PQFN 5x6 easy to design-in, no PCB layout change

Potential Applications

  • Power and gardening tools
  • Service robots and automated guided vehicles (AGVs)
  • Telecom power supplies
  • Server power supplies

Applications

  • Energy Storage Systems
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number BSC033N08NS5SC
Product Name Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC033N08NS5SC
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0033 ohms
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