Infineon Technologies AG Low Noise Amplifier LNA ICs BGA416

Description
BGA416 is a monolithic silicon cascade amplifier with high reverse isolation. A bias network is integrated for simplified biasing. Summary of Features: - GMA = 23 dB at 900MHz - Ultra high reverse isolation, 60 dB at 900 MHz - Low noise figure, F50ω = 1.2 dB at 900 MHz - On chip bias circuitry, 5.5 mA bias current at VCC = 3 V - Typical supply voltage: 2.5 to 5.0 V - SIEGET®-25 technology - Pb-free (RoHS compliant) package Target Applications: - Buffer amplifier - LNAs - Oscillator active devices
Request a Quote Datasheet
Description
BGA416 is a monolithic silicon cascade amplifier with high reverse isolation. A bias network is integrated for simplified biasing. Summary of Features: - GMA = 23 dB at 900MHz - Ultra high reverse isolation, 60 dB at 900 MHz - Low noise figure, F50ω = 1.2 dB at 900 MHz - On chip bias circuitry, 5.5 mA bias current at VCC = 3 V - Typical supply voltage: 2.5 to 5.0 V - SIEGET®-25 technology - Pb-free (RoHS compliant) package Target Applications: - Buffer amplifier - LNAs - Oscillator active devices
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Low Noise Amplifier LNA ICs - BGA416 - Infineon Technologies AG
Neubiberg, Germany
Low Noise Amplifier LNA ICs
BGA416
Low Noise Amplifier LNA ICs BGA416
BGA416 is a monolithic silicon cascade amplifier with high reverse isolation. A bias network is integrated for simplified biasing. Summary of Features: - GMA = 23 dB at 900MHz - Ultra high reverse isolation, 60 dB at 900 MHz - Low noise figure, F50ω = 1.2 dB at 900 MHz - On chip bias circuitry, 5.5 mA bias current at VCC = 3 V - Typical supply voltage: 2.5 to 5.0 V - SIEGET®-25 technology - Pb-free (RoHS compliant) package Target Applications: - Buffer amplifier - LNAs - Oscillator active devices

BGA416 is a monolithic silicon cascade amplifier with high reverse isolation. A bias network is integrated for simplified biasing.
Summary of Features:
- GMA = 23 dB at 900MHz
- Ultra high reverse isolation, 60 dB at 900 MHz
- Low noise figure, F50Ω = 1.2 dB at 900 MHz
- On chip bias circuitry, 5.5 mA bias current at VCC = 3 V
- Typical supply voltage: 2.5 to 5.0 V
- SIEGET®-25 technology
- Pb-free (RoHS compliant) package
Target Applications:
- Buffer amplifier
- LNAs
- Oscillator active devices

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category RF Amplifiers
Product Number BGA416
Product Name Low Noise Amplifier LNA ICs
RoHS Compliant RoHS
Frequency Range ? to 3000 MHz
Minimum Gain 23 dB
Maximum Gain 23 dB
Unlock Full Specs
to access all available technical data

Similar Products

RF Amplifiers - BGA711N7E6327XTSA1-ND - DigiKey
Infineon Technologies AG
Specs
Amplifier Type Low Noise Amplifier; Power Amplifier
Frequency Range 1800 to 2700 MHz
Minimum Gain 17 dB
View Details
3 suppliers
GPS / GLONASS / COMPASS LNA - BGA711N7 - Infineon Technologies AG
Specs
RoHS Compliant RoHS
Frequency Range 2100 MHz
Minimum Gain 17 dB
View Details
2 suppliers
RF Amplifiers - BGA614H6327XTSA1TR-ND - DigiKey
Infineon Technologies AG
Specs
Amplifier Type Low Noise Amplifier; Power Amplifier
Applications Mobile / Wireless Systems; CDMA, GSM, PCS
Frequency Range 0.0 to 2400 MHz
View Details
4 suppliers
RF Amplifiers - BGB741L7ESDE6327XTSA1TR-ND - DigiKey
Specs
Amplifier Type Low Noise Amplifier; Power Amplifier
Applications Mobile / Wireless Systems; Cellular, RKE, WiFi
Frequency Range 50 to 3500 MHz
View Details
3 suppliers