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Infineon Technologies AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs AUIRFS3306

Description
MOSFET N-CH 60V 120A D2PAK
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AUIRFS3306 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
AUIRFS3306
Discrete Semiconductor Products - Transistors - FETs, MOSFETs AUIRFS3306
MOSFET N-CH 60V 120A D2PAK

MOSFET N-CH 60V 120A D2PAK

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRFS3306 - 1149860-AUIRFS3306 - Win Source Electronics
Yishun, Singapore
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRFS3306
1149860-AUIRFS3306
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRFS3306 1149860-AUIRFS3306
Manufacturer: INTERNATIONAL RECTIFIER Win Source Part Number: 1149860-AUIRFS3306 Manufacturer Homepage: www.irf.com RoHS State: Request Verification Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited

Manufacturer: INTERNATIONAL RECTIFIER
Win Source Part Number: 1149860-AUIRFS3306
Manufacturer Homepage: www.irf.com
RoHS State: Request Verification
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited

Supplier's Site
Single FETs, MOSFETs - AUIRFS3306-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
AUIRFS3306-ND
Single FETs, MOSFETs AUIRFS3306-ND
N-Channel 60V 120A (Tc) 230W (Tc) Surface Mount PG-TO263-3

N-Channel 60V 120A (Tc) 230W (Tc) Surface Mount PG-TO263-3

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET Auto 60V Sngl N-Ch HEXFET PowerMOSFET

MOSFET Auto 60V Sngl N-Ch HEXFET PowerMOSFET

Supplier's Site Datasheet
 - 7849174 - RS Components, Ltd.
Corby, Northants, United Kingdom
Infineons comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. Channel Type = N Maximum Continuous Drain Current = 120 A, 160 A Maximum Drain Source Voltage = 60 V Maximum Drain Source Resistance = 4.2 mOhms Maximum Gate Threshold Voltage = 4V Minimum Gate Threshold Voltage = 2V Maximum Gate Source Voltage = -20 V, +20 V Package Type = D2PAK (TO-263) Mounting Type = Surface Mount Pin Count = 3

Infineons comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Channel Type = N
Maximum Continuous Drain Current = 120 A, 160 A
Maximum Drain Source Voltage = 60 V
Maximum Drain Source Resistance = 4.2 mOhms
Maximum Gate Threshold Voltage = 4V
Minimum Gate Threshold Voltage = 2V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = D2PAK (TO-263)
Mounting Type = Surface Mount
Pin Count = 3

Supplier's Site
 - 7849174P - RS Components, Ltd.
Corby, Northants, United Kingdom
Infineons comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency. Channel Type = N Maximum Continuous Drain Current = 120 A, 160 A Maximum Drain Source Voltage = 60 V Maximum Drain Source Resistance = 4.2 mOhms Maximum Gate Threshold Voltage = 4V Minimum Gate Threshold Voltage = 2V Maximum Gate Source Voltage = -20 V, +20 V Package Type = D2PAK (TO-263) Mounting Type = Surface Mount Pin Count = 3 Delivery on production packaging - Tube. This product is non-returnable.

Infineons comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Channel Type = N
Maximum Continuous Drain Current = 120 A, 160 A
Maximum Drain Source Voltage = 60 V
Maximum Drain Source Resistance = 4.2 mOhms
Maximum Gate Threshold Voltage = 4V
Minimum Gate Threshold Voltage = 2V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = D2PAK (TO-263)
Mounting Type = Surface Mount
Pin Count = 3
Delivery on production packaging - Tube. This product is non-returnable.

Supplier's Site

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Win Source Electronics DigiKey VAST STOCK CO., LIMITED RS Components, Ltd.
Product Category RF Transistors Power MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number AUIRFS3306 1149860-AUIRFS3306 AUIRFS3306-ND AUIRFS3306 7849174
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRFS3306 Single FETs, MOSFETs MOSFET
Package Type Surface Mount SOT3 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB D2PAK (TO-263)
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