Infineon Technologies AG Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT discretes - AIKB30N65DH5 AIKB30N65DH5

Description
World-class low-cost power for fast-switching applications in small SMD packages Energy efficiency is the most important aspect for electric vehicles and hybrid vehicles. Therefore, Infineon has developed the 650 V TRENCHSTOP™ 5 AUTO technology with H5/F5 optimization to enable highest efficiency fast switching automotive applications such as On-Board Charger, PFC, DC/DC and DC/AC. TRENCHSTOP™ 5 AUTO is an IGBT technology that enables world’s lowest losses for switching and conduction in its category. The resulting high efficiency enables either an increased cruising range or a downsizing of the batteries for electric vehicles. For hybrid vehicles, it helps to reduce overall fuel consumption. The great performance of TRENCHSTOP™ 5 AUTO offers a cost-optimized solution where engineers were used to use MOSFETs only. Moreover, TRENCHSTOP™ 5 AUTO technology in an SMD housing, like the D²PAK (PG-TO263-3), even further decreases IGBT solution costs by reducing cost on system and manufacturing level. This comes with the benefit of increased quality control due to automated processes. Summary of Features TRENCHSTOP™ 5 technology with low VCEsat, optimized as H5 variant (High Speed Variant) with softer switching behavior for easier design-in 650V break-down voltage, 30A nominal current Co-packed with RAPID-1 fast and soft anti-parallel diode Very fast switching (up to 150kHz) Automotive qualified in accordance to Infineon quality standards Max junction temperature 175 °C Highest efficiency very low conduction losses very low switching losses Very low junction and case temperature SMD D2PAK package for low assembly costs and higher power density Extremely robust Potential Applications On-Board Charger (mainly in the PFC stage) DC-DC or DC-AC Auxiliary drive (e.g. Motor drive) Applications HVAC control module
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Description
World-class low-cost power for fast-switching applications in small SMD packages Energy efficiency is the most important aspect for electric vehicles and hybrid vehicles. Therefore, Infineon has developed the 650 V TRENCHSTOP™ 5 AUTO technology with H5/F5 optimization to enable highest efficiency fast switching automotive applications such as On-Board Charger, PFC, DC/DC and DC/AC. TRENCHSTOP™ 5 AUTO is an IGBT technology that enables world’s lowest losses for switching and conduction in its category. The resulting high efficiency enables either an increased cruising range or a downsizing of the batteries for electric vehicles. For hybrid vehicles, it helps to reduce overall fuel consumption. The great performance of TRENCHSTOP™ 5 AUTO offers a cost-optimized solution where engineers were used to use MOSFETs only. Moreover, TRENCHSTOP™ 5 AUTO technology in an SMD housing, like the D²PAK (PG-TO263-3), even further decreases IGBT solution costs by reducing cost on system and manufacturing level. This comes with the benefit of increased quality control due to automated processes. Summary of Features TRENCHSTOP™ 5 technology with low VCEsat, optimized as H5 variant (High Speed Variant) with softer switching behavior for easier design-in 650V break-down voltage, 30A nominal current Co-packed with RAPID-1 fast and soft anti-parallel diode Very fast switching (up to 150kHz) Automotive qualified in accordance to Infineon quality standards Max junction temperature 175 °C Highest efficiency very low conduction losses very low switching losses Very low junction and case temperature SMD D2PAK package for low assembly costs and higher power density Extremely robust Potential Applications On-Board Charger (mainly in the PFC stage) DC-DC or DC-AC Auxiliary drive (e.g. Motor drive) Applications HVAC control module
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Datasheet
Datasheet Summary
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The AIKB30N65DH5 is a fifth-generation high-speed IGBT with a co-packed RAPID 1 fast and soft anti-parallel diode, designed for efficient switching in automotive applications. It is packaged in a PG-TO263-3 (D²PAK) surface-mount device with dimensions of 10.70-10.90 mm length, 9.30-9.50 mm width, and 4.50-4.70 mm height. The device has a collector-emitter voltage rating of 650 V, a continuous collector current of 30 A at 100°C, and a pulsed collector current of 90 A. The collector-emitter saturation voltage is 1.65 V at 30 A and 25°C, with a maximum junction temperature of 175°C. Thermal resistance from junction to case is 0.80 K/W for the IGBT and 1.80 K/W for the diode. The IGBT is automotive qualified and meets Infineon's internal quality standards for automotive applications.

Datasheet Summary
Powered by GS/AI

The AIKB30N65DH5 is a fifth-generation high-speed IGBT with a co-packed RAPID 1 fast and soft anti-parallel diode, designed for efficient switching in automotive applications. It is packaged in a PG-TO263-3 (D²PAK) surface-mount device with dimensions of 10.70-10.90 mm length, 9.30-9.50 mm width, and 4.50-4.70 mm height. The device has a collector-emitter voltage rating of 650 V, a continuous collector current of 30 A at 100°C, and a pulsed collector current of 90 A. The collector-emitter saturation voltage is 1.65 V at 30 A and 25°C, with a maximum junction temperature of 175°C. Thermal resistance from junction to case is 0.80 K/W for the IGBT and 1.80 K/W for the diode. The IGBT is automotive qualified and meets Infineon's internal quality standards for automotive applications.

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Supplier Links
Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT discretes - AIKB30N65DH5 - AIKB30N65DH5 - Infineon Technologies AG
Neubiberg, Germany
Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT discretes - AIKB30N65DH5
AIKB30N65DH5
Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT discretes - AIKB30N65DH5 AIKB30N65DH5
World-class low-cost power for fast-switching applications in small SMD packages Energy efficiency is the most important aspect for electric vehicles and hybrid vehicles. Therefore, Infineon has developed the 650 V TRENCHSTOP™ 5 AUTO technology with H5/F5 optimization to enable highest efficiency fast switching automotive applications such as On-Board Charger, PFC, DC/DC and DC/AC. TRENCHSTOP™ 5 AUTO is an IGBT technology that enables world’s lowest losses for switching and conduction in its category. The resulting high efficiency enables either an increased cruising range or a downsizing of the batteries for electric vehicles. For hybrid vehicles, it helps to reduce overall fuel consumption. The great performance of TRENCHSTOP™ 5 AUTO offers a cost-optimized solution where engineers were used to use MOSFETs only. Moreover, TRENCHSTOP™ 5 AUTO technology in an SMD housing, like the D²PAK (PG-TO263-3), even further decreases IGBT solution costs by reducing cost on system and manufacturing level. This comes with the benefit of increased quality control due to automated processes. Summary of Features TRENCHSTOP™ 5 technology with low VCEsat, optimized as H5 variant (High Speed Variant) with softer switching behavior for easier design-in 650V break-down voltage, 30A nominal current Co-packed with RAPID-1 fast and soft anti-parallel diode Very fast switching (up to 150kHz) Automotive qualified in accordance to Infineon quality standards Max junction temperature 175 °C Highest efficiency very low conduction losses very low switching losses Very low junction and case temperature SMD D2PAK package for low assembly costs and higher power density Extremely robust Potential Applications On-Board Charger (mainly in the PFC stage) DC-DC or DC-AC Auxiliary drive (e.g. Motor drive) Applications HVAC control module

World-class low-cost power for fast-switching applications in small SMD packages

Energy efficiency is the most important aspect for electric vehicles and hybrid vehicles. Therefore, Infineon has developed the 650 V TRENCHSTOP™ 5 AUTO technology with H5/F5 optimization to enable highest efficiency fast switching automotive applications such as On-Board Charger, PFC, DC/DC and DC/AC.

TRENCHSTOP™ 5 AUTO is an IGBT technology that enables world’s lowest losses for switching and conduction in its category. The resulting high efficiency enables either an increased cruising range or a downsizing of the batteries for electric vehicles. For hybrid vehicles, it helps to reduce overall fuel consumption. The great performance of TRENCHSTOP™ 5 AUTO offers a cost-optimized solution where engineers were used to use MOSFETs only.

Moreover, TRENCHSTOP™ 5 AUTO technology in an SMD housing, like the D²PAK (PG-TO263-3), even further decreases IGBT solution costs by reducing cost on system and manufacturing level. This comes with the benefit of increased quality control due to automated processes.


Summary of Features

  • TRENCHSTOP™ 5 technology with low VCEsat, optimized as H5 variant (High Speed Variant) with softer switching behavior for easier design-in
  • 650V break-down voltage, 30A nominal current
  • Co-packed with RAPID-1 fast and soft anti-parallel diode
  • Very fast switching (up to 150kHz)
  • Automotive qualified in accordance to Infineon quality standards
  • Max junction temperature 175 °C
  • Highest efficiency
    • very low conduction losses
    • very low switching losses
  • Very low junction and case temperature
  • SMD D2PAK package for low assembly costs and higher power density
  • Extremely robust

Potential Applications

  • On-Board Charger (mainly in the PFC stage)
  • DC-DC or DC-AC
  • Auxiliary drive (e.g. Motor drive)

Applications

  • HVAC control module
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number AIKB30N65DH5
Product Name Power - IGBT - Automotive-qualified IGBTs - Automotive IGBT discretes - AIKB30N65DH5
VCE(on) 650 volts
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