Infineon Technologies AG Power - Gate Driver ICs - 2EDL8034F5B 2EDL8034F5B

Description
The 2EDL8034F5B is designed to drive both high and low-side MOSFETs in a half-bridge configuration. The floating high-side driver is capable of driving a high-side MOSFET operating up to 120 V bootstrap voltage & provides 3 A current capability. The high-side bias voltage is generated using an integrated bootstrap diode. The inputs of the driver are TTL logic compatible and can withstand input common mode swing from -10 V up to 20 V. Summary of Features 4 A source / 6 A sink output current 120 V absolute maximum boot voltage Integrated bootstrap diode -10 V to 20 V input pin capability -5 A output pin reverse current cap. -12 V abs maximum negative voltage on HS 8-17 V supply voltage operating range UVLO for both high-side and low-side Fast propagation delay (< 35 ns) 2 ns typical delay matching Offered in DSO-8 -40ºC to 125ºC operating junction T° Benefits Best-in-class driving capability Strong 4 A source/ sink capability Strong 6 A pull down (no induced turn on) Tight propagation delay matching DSO-8 package, industry standard pin-out Integrated bootstrap diode Potential Applications Solar - Micro-Inverters & Power optimizers Telecom/Datacom half- and full-bridge power converters
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Description
The 2EDL8034F5B is designed to drive both high and low-side MOSFETs in a half-bridge configuration. The floating high-side driver is capable of driving a high-side MOSFET operating up to 120 V bootstrap voltage & provides 3 A current capability. The high-side bias voltage is generated using an integrated bootstrap diode. The inputs of the driver are TTL logic compatible and can withstand input common mode swing from -10 V up to 20 V. Summary of Features 4 A source / 6 A sink output current 120 V absolute maximum boot voltage Integrated bootstrap diode -10 V to 20 V input pin capability -5 A output pin reverse current cap. -12 V abs maximum negative voltage on HS 8-17 V supply voltage operating range UVLO for both high-side and low-side Fast propagation delay (< 35 ns) 2 ns typical delay matching Offered in DSO-8 -40ºC to 125ºC operating junction T° Benefits Best-in-class driving capability Strong 4 A source/ sink capability Strong 6 A pull down (no induced turn on) Tight propagation delay matching DSO-8 package, industry standard pin-out Integrated bootstrap diode Potential Applications Solar - Micro-Inverters & Power optimizers Telecom/Datacom half- and full-bridge power converters
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Power - Gate Driver ICs - 2EDL8034F5B - 2EDL8034F5B - Infineon Technologies AG
Neubiberg, Germany
Power - Gate Driver ICs - 2EDL8034F5B
2EDL8034F5B
Power - Gate Driver ICs - 2EDL8034F5B 2EDL8034F5B
The 2EDL8034F5B is designed to drive both high and low-side MOSFETs in a half-bridge configuration. The floating high-side driver is capable of driving a high-side MOSFET operating up to 120 V bootstrap voltage & provides 3 A current capability. The high-side bias voltage is generated using an integrated bootstrap diode. The inputs of the driver are TTL logic compatible and can withstand input common mode swing from -10 V up to 20 V. Summary of Features 4 A source / 6 A sink output current 120 V absolute maximum boot voltage Integrated bootstrap diode -10 V to 20 V input pin capability -5 A output pin reverse current cap. -12 V abs maximum negative voltage on HS 8-17 V supply voltage operating range UVLO for both high-side and low-side Fast propagation delay (< 35 ns) 2 ns typical delay matching Offered in DSO-8 -40ºC to 125ºC operating junction T° Benefits Best-in-class driving capability Strong 4 A source/ sink capability Strong 6 A pull down (no induced turn on) Tight propagation delay matching DSO-8 package, industry standard pin-out Integrated bootstrap diode Potential Applications Solar - Micro-Inverters & Power optimizers Telecom/Datacom half- and full-bridge power converters

The 2EDL8034F5B is designed to drive both high and low-side MOSFETs in a half-bridge configuration. The floating high-side driver is capable of driving a high-side MOSFET operating up to 120 V bootstrap voltage & provides 3 A current capability. The high-side bias voltage is generated using an integrated bootstrap diode. The inputs of the driver are TTL logic compatible and can withstand input common mode swing from -10 V up to 20 V.


Summary of Features

  • 4 A source / 6 A sink output current
  • 120 V absolute maximum boot voltage
  • Integrated bootstrap diode
  • -10 V to 20 V input pin capability
  • -5 A output pin reverse current cap.
  • -12 V abs maximum negative voltage on HS
  • 8-17 V supply voltage operating range
  • UVLO for both high-side and low-side
  • Fast propagation delay (< 35 ns)
  • 2 ns typical delay matching
  • Offered in DSO-8
  • -40ºC to 125ºC operating junction T°

Benefits

  • Best-in-class driving capability
  • Strong 4 A source/ sink capability
  • Strong 6 A pull down (no induced turn on)
  • Tight propagation delay matching
  • DSO-8 package, industry standard pin-out
  • Integrated bootstrap diode

Potential Applications

  • Solar - Micro-Inverters & Power optimizers
  • Telecom/Datacom half- and full-bridge power converters
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Gate Drivers
Product Number 2EDL8034F5B
Product Name Power - Gate Driver ICs - 2EDL8034F5B
Supply Voltage 8 to 17 volts
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