Infineon Technologies AG Power - Gate Driver ICs - 2ED3146MC12L 2ED3146MC12L

Description
EiceDRIVER™ Compact dual-channel isolated gate driver with 6.5 A sinking and 6 A sourcing peak output current in a 14-pin DSO wide body package for IGBTs, MOSFETsand SiC MOSFETs. It offers dead-time control (DTC) functionality and independent channel operation. This allows for operation as a dual-channel low-side driver, a dual-channel high-side driver or a half-bridge gate driver with a configurable dead-time. Summary of Features For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs 2300 V functional offset voltage capable for selected applications Galvanically isolated coreless transformer gate driver Up to 6.5 A typical peak output current 39 ns propagation delay 35 V absolute maximum output supply voltage High common-mode transient immunity CMTI > 200 kV/µs Active shutdown and short circuit clamping 3.3 V and 5 V input supply voltage Enable pin 12.5 V/ 13.6 V undervoltage lockout (UVLO) protection with hysteresis Benefits 8 mm input-to-output and 3.3 mm channel-to-channel creepage and clearance Tight part-to-part propogation delay skew of 8 ns max Tight channel-to-channel propogation delay skew of 5ns max Dual-channel configuation reduces footprint Dead time control UL 1577 VISO = 6.84 kV (rms) for 1 s, VISO = 5.7 kV (rms) for 1 min IEC 60747-17 (planned) with VIORM = 1767 V (peak, reinforced) Applications DIN rail power supplies Energy Storage Systems EV charging General purpose motor drive - variating frequency and voltage Motor Control Every driver needs a Power supply. That’s why Infineon now also offers the EiceDRIVER™ Power 2EP1xxR family, a full-bridge transformer driver IC housed in a compact TSSOP8 pin package that provides a simple power-supply alternative to generate an asymmetric output voltage to supply isolated gate drivers. Learn more about the transformer driver ICs Designers who used this product also designed with IMZ120R030M1H | Silicon Carbide MOSFET Discretes TLI4971-A120T5-U-E00 01 | Current sensors IMZ120R030M1H | Silicon Carbide MOSFET Discretes TLI4971-A120T5-U-E00 01 | Current sensors IMZ120R030M1H | Silicon Carbide MOSFET Discretes TLI4971-A120T5-U-E00 01 | Current sensors
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Description
EiceDRIVER™ Compact dual-channel isolated gate driver with 6.5 A sinking and 6 A sourcing peak output current in a 14-pin DSO wide body package for IGBTs, MOSFETsand SiC MOSFETs. It offers dead-time control (DTC) functionality and independent channel operation. This allows for operation as a dual-channel low-side driver, a dual-channel high-side driver or a half-bridge gate driver with a configurable dead-time. Summary of Features For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs 2300 V functional offset voltage capable for selected applications Galvanically isolated coreless transformer gate driver Up to 6.5 A typical peak output current 39 ns propagation delay 35 V absolute maximum output supply voltage High common-mode transient immunity CMTI > 200 kV/µs Active shutdown and short circuit clamping 3.3 V and 5 V input supply voltage Enable pin 12.5 V/ 13.6 V undervoltage lockout (UVLO) protection with hysteresis Benefits 8 mm input-to-output and 3.3 mm channel-to-channel creepage and clearance Tight part-to-part propogation delay skew of 8 ns max Tight channel-to-channel propogation delay skew of 5ns max Dual-channel configuation reduces footprint Dead time control UL 1577 VISO = 6.84 kV (rms) for 1 s, VISO = 5.7 kV (rms) for 1 min IEC 60747-17 (planned) with VIORM = 1767 V (peak, reinforced) Applications DIN rail power supplies Energy Storage Systems EV charging General purpose motor drive - variating frequency and voltage Motor Control Every driver needs a Power supply. That’s why Infineon now also offers the EiceDRIVER™ Power 2EP1xxR family, a full-bridge transformer driver IC housed in a compact TSSOP8 pin package that provides a simple power-supply alternative to generate an asymmetric output voltage to supply isolated gate drivers. Learn more about the transformer driver ICs Designers who used this product also designed with IMZ120R030M1H | Silicon Carbide MOSFET Discretes TLI4971-A120T5-U-E00 01 | Current sensors IMZ120R030M1H | Silicon Carbide MOSFET Discretes TLI4971-A120T5-U-E00 01 | Current sensors IMZ120R030M1H | Silicon Carbide MOSFET Discretes TLI4971-A120T5-U-E00 01 | Current sensors
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Suppliers

Company
Product
Description
Supplier Links
Power - Gate Driver ICs - 2ED3146MC12L - 2ED3146MC12L - Infineon Technologies AG
Neubiberg, Germany
Power - Gate Driver ICs - 2ED3146MC12L
2ED3146MC12L
Power - Gate Driver ICs - 2ED3146MC12L 2ED3146MC12L
EiceDRIVER™ Compact dual-channel isolated gate driver with 6.5 A sinking and 6 A sourcing peak output current in a 14-pin DSO wide body package for IGBTs, MOSFETsand SiC MOSFETs. It offers dead-time control (DTC) functionality and independent channel operation. This allows for operation as a dual-channel low-side driver, a dual-channel high-side driver or a half-bridge gate driver with a configurable dead-time. Summary of Features For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs 2300 V functional offset voltage capable for selected applications Galvanically isolated coreless transformer gate driver Up to 6.5 A typical peak output current 39 ns propagation delay 35 V absolute maximum output supply voltage High common-mode transient immunity CMTI > 200 kV/µs Active shutdown and short circuit clamping 3.3 V and 5 V input supply voltage Enable pin 12.5 V/ 13.6 V undervoltage lockout (UVLO) protection with hysteresis Benefits 8 mm input-to-output and 3.3 mm channel-to-channel creepage and clearance Tight part-to-part propogation delay skew of 8 ns max Tight channel-to-channel propogation delay skew of 5ns max Dual-channel configuation reduces footprint Dead time control UL 1577 VISO = 6.84 kV (rms) for 1 s, VISO = 5.7 kV (rms) for 1 min IEC 60747-17 (planned) with VIORM = 1767 V (peak, reinforced) Applications DIN rail power supplies Energy Storage Systems EV charging General purpose motor drive - variating frequency and voltage Motor Control Every driver needs a Power supply. That’s why Infineon now also offers the EiceDRIVER™ Power 2EP1xxR family, a full-bridge transformer driver IC housed in a compact TSSOP8 pin package that provides a simple power-supply alternative to generate an asymmetric output voltage to supply isolated gate drivers. Learn more about the transformer driver ICs Designers who used this product also designed with IMZ120R030M1H | Silicon Carbide MOSFET Discretes TLI4971-A120T5-U-E00 01 | Current sensors IMZ120R030M1H | Silicon Carbide MOSFET Discretes TLI4971-A120T5-U-E00 01 | Current sensors IMZ120R030M1H | Silicon Carbide MOSFET Discretes TLI4971-A120T5-U-E00 01 | Current sensors

EiceDRIVER™ Compact dual-channel isolated gate driver with 6.5 A sinking and 6 A sourcing peak output current in a 14-pin DSO wide body package for IGBTs, MOSFETsand SiC MOSFETs.

It offers dead-time control (DTC) functionality and independent channel operation. This allows for operation
as a dual-channel low-side driver, a dual-channel high-side driver or a half-bridge gate driver with a configurable dead-time.


Summary of Features

  • For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs
  • 2300 V functional offset voltage capable for selected applications
  • Galvanically isolated coreless transformer gate driver
  • Up to 6.5 A typical peak output current
  • 39 ns propagation delay
  • 35 V absolute maximum output supply voltage
  • High common-mode transient immunity CMTI > 200 kV/µs
  • Active shutdown and short circuit clamping
  • 3.3 V and 5 V input supply voltage
  • Enable pin
  • 12.5 V/ 13.6 V undervoltage lockout (UVLO) protection with hysteresis

Benefits

  • 8 mm input-to-output and 3.3 mm channel-to-channel creepage and clearance
  • Tight part-to-part propogation delay skew of 8 ns max
  • Tight channel-to-channel propogation delay skew of 5ns max
  • Dual-channel configuation reduces footprint
  • Dead time control
  • UL 1577 VISO = 6.84 kV (rms) for 1 s, VISO = 5.7 kV (rms) for 1 min
  • IEC 60747-17 (planned) with VIORM = 1767 V (peak, reinforced)

Applications

  • DIN rail power supplies
  • Energy Storage Systems
  • EV charging
  • General purpose motor drive - variating frequency and voltage
  • Motor Control

Every driver needs a Power supply. That’s why Infineon now also offers the EiceDRIVER™ Power 2EP1xxR family, a full-bridge transformer driver IC housed in a compact TSSOP8 pin package that provides a simple power-supply alternative to generate an asymmetric output voltage to supply isolated gate drivers.

Learn more about the transformer driver ICs


Designers who used this product also designed with


  • IMZ120R030M1H |
    Silicon Carbide MOSFET Discretes
  • TLI4971-A120T5-U-E0001 |
    Current sensors
  • IMZ120R030M1H |
    Silicon Carbide MOSFET Discretes
  • TLI4971-A120T5-U-E0001 |
    Current sensors
  • IMZ120R030M1H |
    Silicon Carbide MOSFET Discretes
  • TLI4971-A120T5-U-E0001 |
    Current sensors
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Gate Drivers
Product Number 2ED3146MC12L
Product Name Power - Gate Driver ICs - 2ED3146MC12L
Driver Type High-side
Output Current 6 amps
Supply Voltage -0.3000 to 17 volts
Propagation Delay 39 ns
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