EiceDRIVER™ Compact dual-channel isolated gate driver with 6.5 A sinking and 6 A sourcing peak output current in a 14-pin DSO wide body package for IGBTs, MOSFETsand SiC MOSFETs.
It offers dead-time control (DTC) functionality and independent channel operation. This allows for operation as a dual-channel low-side driver, a dual-channel high-side driver or a half-bridge gate driver with a configurable dead-time.
Summary of Features
For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs
2300 V functional offset voltage capable for selected applications
Galvanically isolated coreless transformer gate driver
Up to 6.5 A typical peak output current
39 ns propagation delay
35 V absolute maximum output supply voltage
High common-mode transient immunity CMTI > 200 kV/µs
Active shutdown and short circuit clamping
3.3 V and 5 V input supply voltage
Enable pin
12.5 V/ 13.6 V undervoltage lockout (UVLO) protection with hysteresis
Benefits
8 mm input-to-output and 3.3 mm channel-to-channel creepage and clearance
Tight part-to-part propogation delay skew of 8 ns max
Tight channel-to-channel propogation delay skew of 5ns max
Dual-channel configuation reduces footprint
Dead time control
UL 1577 VISO = 6.84 kV (rms) for 1 s, VISO = 5.7 kV (rms) for 1 min
IEC 60747-17 (planned) with VIORM = 1767 V (peak, reinforced)
Applications
DIN rail power supplies
Energy Storage Systems
EV charging
General purpose motor drive - variating frequency and voltage
Motor Control
Every driver needs a Power supply. That’s why Infineon now also offers the EiceDRIVER™ Power 2EP1xxR family, a full-bridge transformer driver IC housed in a compact TSSOP8 pin package that provides a simple power-supply alternative to generate an asymmetric output voltage to supply isolated gate drivers.
Learn more about the transformer driver ICs
Designers who used this product also designed with
IMZ120R030M1H | Silicon Carbide MOSFET Discretes
TLI4971-A120T5-U-E00
01 | Current sensors
IMZ120R030M1H | Silicon Carbide MOSFET Discretes
TLI4971-A120T5-U-E00
01 | Current sensors
IMZ120R030M1H | Silicon Carbide MOSFET Discretes
TLI4971-A120T5-U-E00
01 | Current sensors
EiceDRIVER™ Compact dual-channel isolated gate driver with 6.5 A sinking and 6 A sourcing peak output current in a 14-pin DSO wide body package for IGBTs, MOSFETsand SiC MOSFETs.
It offers dead-time control (DTC) functionality and independent channel operation. This allows for operation
as a dual-channel low-side driver, a dual-channel high-side driver or a half-bridge gate driver with a configurable dead-time.
Summary of Features
- For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs
- 2300 V functional offset voltage capable for selected applications
- Galvanically isolated coreless transformer gate driver
- Up to 6.5 A typical peak output current
- 39 ns propagation delay
- 35 V absolute maximum output supply voltage
- High common-mode transient immunity CMTI > 200 kV/µs
- Active shutdown and short circuit clamping
- 3.3 V and 5 V input supply voltage
- Enable pin
- 12.5 V/ 13.6 V undervoltage lockout (UVLO) protection with hysteresis
Benefits
- 8 mm input-to-output and 3.3 mm channel-to-channel creepage and clearance
- Tight part-to-part propogation delay skew of 8 ns max
- Tight channel-to-channel propogation delay skew of 5ns max
- Dual-channel configuation reduces footprint
- Dead time control
- UL 1577 VISO = 6.84 kV (rms) for 1 s, VISO = 5.7 kV (rms) for 1 min
- IEC 60747-17 (planned) with VIORM = 1767 V (peak, reinforced)
Applications
- DIN rail power supplies
- Energy Storage Systems
- EV charging
- General purpose motor drive - variating frequency and voltage
- Motor Control
Every driver needs a Power supply. That’s why Infineon now also offers the EiceDRIVER™ Power 2EP1xxR family, a full-bridge transformer driver IC housed in a compact TSSOP8 pin package that provides a simple power-supply alternative to generate an asymmetric output voltage to supply isolated gate drivers.
Learn more about the transformer driver ICs
Designers who used this product also designed with
- IMZ120R030M1H |
Silicon Carbide MOSFET Discretes
- TLI4971-A120T5-U-E0001 |
Current sensors
- IMZ120R030M1H |
Silicon Carbide MOSFET Discretes
- TLI4971-A120T5-U-E0001 |
Current sensors
- IMZ120R030M1H |
Silicon Carbide MOSFET Discretes
- TLI4971-A120T5-U-E0001 |
Current sensors