Infineon Technologies AG Gate Driver ICs 2ED2110S06M

Description
650 V high-side and low-side gate driver with integrated bootstrap diode 650 V high speed, high current high-side and low-side gate driver with typical 2.5 A source and sink currents in DSO-16 package for driving power MOSFETs and IGBTs. Based on our SOI-technology, the 2ED2110S06M has excellent ruggedness and noise immunity against negative transient voltages on VS pin. With no parasitic thyristor structures present in the device, no parasitic latch up can occur over all temperature and voltage conditions. Summary of Features Operating voltages (VS node) up to + 650 V Negative VS transient immunity of 100 V Integrated ultra-fast, low resistance bootstrap diode 90 ns propagation delay Floating channel designed for bootstrap operation Independent under voltage lockout (UVLO) for both channels Logic operational up to –11 V on VS Pin Negative voltage tolerance on inputs of –5 V Maximum supply voltage of 25 V 3.3 V, 5 V and 15 V input logic compatible Separate logic and power ground Benefits High current gate driver - suitable for high current power device, and high frequency application Integrated bootstrap diode - space savings, reduced BOM cost, smaller PCB at lower cost with simpler design 50% lower level-shift losses Excellent ruggedness and noise immunity against negative transient voltages on VS pin Applications Cordless power tools and outdoor power equipment Motor Control Photovoltaic Power tools Smart buildings
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Description
650 V high-side and low-side gate driver with integrated bootstrap diode 650 V high speed, high current high-side and low-side gate driver with typical 2.5 A source and sink currents in DSO-16 package for driving power MOSFETs and IGBTs. Based on our SOI-technology, the 2ED2110S06M has excellent ruggedness and noise immunity against negative transient voltages on VS pin. With no parasitic thyristor structures present in the device, no parasitic latch up can occur over all temperature and voltage conditions. Summary of Features Operating voltages (VS node) up to + 650 V Negative VS transient immunity of 100 V Integrated ultra-fast, low resistance bootstrap diode 90 ns propagation delay Floating channel designed for bootstrap operation Independent under voltage lockout (UVLO) for both channels Logic operational up to –11 V on VS Pin Negative voltage tolerance on inputs of –5 V Maximum supply voltage of 25 V 3.3 V, 5 V and 15 V input logic compatible Separate logic and power ground Benefits High current gate driver - suitable for high current power device, and high frequency application Integrated bootstrap diode - space savings, reduced BOM cost, smaller PCB at lower cost with simpler design 50% lower level-shift losses Excellent ruggedness and noise immunity against negative transient voltages on VS pin Applications Cordless power tools and outdoor power equipment Motor Control Photovoltaic Power tools Smart buildings
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Gate Driver ICs - 2ED2110S06M - Infineon Technologies AG
Neubiberg, Germany
Gate Driver ICs
2ED2110S06M
Gate Driver ICs 2ED2110S06M
650 V high-side and low-side gate driver with integrated bootstrap diode 650 V high speed, high current high-side and low-side gate driver with typical 2.5 A source and sink currents in DSO-16 package for driving power MOSFETs and IGBTs. Based on our SOI-technology, the 2ED2110S06M has excellent ruggedness and noise immunity against negative transient voltages on VS pin. With no parasitic thyristor structures present in the device, no parasitic latch up can occur over all temperature and voltage conditions. Summary of Features Operating voltages (VS node) up to + 650 V Negative VS transient immunity of 100 V Integrated ultra-fast, low resistance bootstrap diode 90 ns propagation delay Floating channel designed for bootstrap operation Independent under voltage lockout (UVLO) for both channels Logic operational up to –11 V on VS Pin Negative voltage tolerance on inputs of –5 V Maximum supply voltage of 25 V 3.3 V, 5 V and 15 V input logic compatible Separate logic and power ground Benefits High current gate driver - suitable for high current power device, and high frequency application Integrated bootstrap diode - space savings, reduced BOM cost, smaller PCB at lower cost with simpler design 50% lower level-shift losses Excellent ruggedness and noise immunity against negative transient voltages on VS pin Applications Cordless power tools and outdoor power equipment Motor Control Photovoltaic Power tools Smart buildings

650 V high-side and low-side gate driver with integrated bootstrap diode

650 V high speed, high current high-side and low-side gate driver with typical 2.5 A source and sink currents in DSO-16 package for driving power MOSFETs and IGBTs.

Based on our SOI-technology, the 2ED2110S06M has excellent ruggedness and noise immunity against negative transient voltages on VS pin. With no parasitic thyristor structures present in the device, no parasitic latch up can occur over all temperature and voltage conditions.


Summary of Features

  • Operating voltages (VS node) up to + 650 V
  • Negative VS transient immunity of 100 V
  • Integrated ultra-fast, low resistance bootstrap diode
  • 90 ns propagation delay
  • Floating channel designed for bootstrap operation
  • Independent under voltage lockout (UVLO) for both channels
  • Logic operational up to –11 V on VS Pin
  • Negative voltage tolerance on inputs of –5 V
  • Maximum supply voltage of 25 V
  • 3.3 V, 5 V and 15 V input logic compatible
  • Separate logic and power ground

Benefits

  • High current gate driver - suitable for high current power device, and high frequency application
  • Integrated bootstrap diode - space savings, reduced BOM cost, smaller PCB at lower cost with simpler design
  • 50% lower level-shift losses
  • Excellent ruggedness and noise immunity against negative transient voltages on VS pin

Applications

  • Cordless power tools and outdoor power equipment
  • Motor Control
  • Photovoltaic
  • Power tools
  • Smart buildings
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Gate Drivers
Product Number 2ED2110S06M
Product Name Gate Driver ICs
Driver Type High-side; Low-side
Output Current 2.5 amps
Supply Voltage 10 to 20 volts
Propagation Delay 110 ns
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