650 V, 0.7 A half-bridge gate driver with integrated bootstrap diode and shutdown in DSO-8 package
650 V half-bridge high speed power MOSFET and IGBT gate driver with typical 0.29 source current, and 0.7 sink current in DSO-8 package. The DSO-14 package version is also available: 2ED21094S06J.
Based on Infineon’s SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions.
Summary of Features
Operating voltages (VS node) upto + 650 V
Negative VS transient immunity of 100 V
Integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost
Floating channel designed for bootstrap operation
Independent under voltage lockout (UVLO) for both channels
IN, /SD logic input, shutdown input turns off both channels
Internal 540 ns dead time
740 / 200 ns propagation delay
Maximum supply voltage of 25 V
Logic operational up to –11 V on VS Pin
Negative voltage tolerance on inputs of –5 V
The floating channel can be used to drive an N-channel MOSFET, SiC MOSFET or IGBT in the high side configuration
Benefits
Integrated bootstrap diode(BSD)- Space saving, reduced BOM cost, smaller PCB at lower cost with simpler design
50% lower level-shift losses
Excellent ruggedness and noise immunity against negative transient voltages(-100 V) on VS pin
Applications
General purpose motor drive - variating frequency and voltage
Home appliances
Motor Control
Power conversion
Power tools
Find our Variations for 2ED2109S06F
Part No Package Input logic Interlock Deadtime
2ED2106S06F
DSO - 8
HIN, LIN
No None
2ED21064S06J
DSO - 14 HIN, LIN No
None
2ED2108S06F
DSO - 8 HIN, /LIN
Yes
Internal 540 ns
2ED21084S06J
DSO - 14 HIN, /LIN
Yes
Programmable 540 ns - 5000 ns
2ED21094S06J
DSO - 14 IN, /SD
Yes
Programmable 540 ns - 5000 ns
2ED21091S06F
DSO - 8
IN, DT/SD
Yes
Programmable 540 ns - 2700 ns
Part No Package Input logic Interlock Deadtime
650 V, 0.7 A half-bridge gate driver with integrated bootstrap diode and shutdown in DSO-8 package
650 V half-bridge high speed power MOSFET and IGBT gate driver with typical 0.29 source current, and 0.7 sink current in DSO-8 package. The DSO-14 package version is also available: 2ED21094S06J.
Based on Infineon’s SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions.
Summary of Features
- Operating voltages (VS node) upto + 650 V
- Negative VS transient immunity of 100 V
- Integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost
- Floating channel designed for bootstrap operation
- Independent under voltage lockout (UVLO) for both channels
- IN, /SD logic input, shutdown input turns off both channels
- Internal 540 ns dead time
- 740 / 200 ns propagation delay
- Maximum supply voltage of 25 V
- Logic operational up to –11 V on VS Pin
- Negative voltage tolerance on inputs of –5 V
- The floating channel can be used to drive an N-channel MOSFET, SiC MOSFET or IGBT in the high side configuration
Benefits
- Integrated bootstrap diode(BSD)- Space saving, reduced BOM cost, smaller PCB at lower cost with simpler design
- 50% lower level-shift losses
- Excellent ruggedness and noise immunity against negative transient voltages(-100 V) on VS pin
Applications
- General purpose motor drive - variating frequency and voltage
- Home appliances
- Motor Control
- Power conversion
- Power tools
Find our Variations for 2ED2109S06F
Part No Package Input logic Interlock Deadtime
2ED2106S06F
DSO - 8
HIN, LIN
No None
2ED21064S06J
DSO - 14 HIN, LIN No
None
2ED2108S06F
DSO - 8 HIN, /LIN
Yes
Internal 540 ns
2ED21084S06J
DSO - 14 HIN, /LIN
Yes
Programmable 540 ns - 5000 ns
2ED21094S06J
DSO - 14 IN, /SD
Yes
Programmable 540 ns - 5000 ns
2ED21091S06F
DSO - 8
IN, DT/SD
Yes
Programmable 540 ns - 2700 ns
Part No Package Input logic Interlock Deadtime
