Infineon Technologies AG Gate Driver ICs 1EDN7512B

Description
Rugged, cool and fast, 1-channel low-side 4/8A gate driver ICs 1-channel MOSFET gate driver ICs are the crucial link between control ICs and powerful MOSFET and GaN switching devices. Gate driver ICs enable high system level efficiencies, excellent power density and consistent system robustness. 1EDN family: Fast, precise, strong and compatible Highly efficient SMPS enabled by 5 ns short slew rates and ±5ns propagation delay precision for fast MOSFET and GaN switching Separate source and sink outputs simplify the application design Industry standard packages and pinout ease system design upgrades Summary of Features 1EDN family: The new reference in ruggedness and low power dissipation -10V robustness of control and enable inputs provides crucial safety margin when driving pulse transformers 5A reverse output current robustness eliminates the need for Schottky switching diodes when driving MOSFETs in TO-220 and TO-247 packages Cool driver ICs thanks to true rail-to-rail low impedance output stages 4V and 8V UVLO (Under Voltage Lock Out) options for instant MOSFET protection during start-up and under abnormal conditions Potential Applications PFC Synchronous rectification DC-DC converters Telecom bricks Power tools Industrial SMPS Motor control Wireless charging Applications 1-phase string inverter solutions 48 V intermediate bus converter (IBC) Adapters and chargers DIN rail power supplies Uninterruptible power supplies (UPS) Designers who used this product also designed with FM25W256-G | F-RAM (Ferroelectric RAM) IPW65R029CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC070N10NS5SC | N-Channel Power MOSFET IPN80R4K5P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 2N7002DW | Small signal/small power MOSFET IMBF170R1K0M1 | Silicon Carbide MOSFET Discretes IRF7343 | Dual MOSFET F3L600R10W4S7F_C22 | IGBT modules IPZ65R045C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R031CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IDL06G65C5 | CoolSiC™ Schottky Diodes BSC040N10NS5SC | N-Channel Power MOSFET IDL12G65C5 | CoolSiC™ Schottky Diodes IPP65R095C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC070N10LS5 | N-Channel Power MOSFET IPP60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IHW20N135R5 | IGBT discretes BSP125 | Small signal/small power MOSFET FM25W256-G | F-RAM (Ferroelectric RAM) IPW65R029CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC070N10NS5SC | N-Channel Power MOSFET IPN80R4K5P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 2N7002DW | Small signal/small power MOSFET IMBF170R1K0M1 | Silicon Carbide MOSFET Discretes IRF7343 | Dual MOSFET F3L600R10W4S7F_C22 | IGBT modules 1 2 3 4 5
Request a Quote Datasheet
Description
Rugged, cool and fast, 1-channel low-side 4/8A gate driver ICs 1-channel MOSFET gate driver ICs are the crucial link between control ICs and powerful MOSFET and GaN switching devices. Gate driver ICs enable high system level efficiencies, excellent power density and consistent system robustness. 1EDN family: Fast, precise, strong and compatible Highly efficient SMPS enabled by 5 ns short slew rates and ±5ns propagation delay precision for fast MOSFET and GaN switching Separate source and sink outputs simplify the application design Industry standard packages and pinout ease system design upgrades Summary of Features 1EDN family: The new reference in ruggedness and low power dissipation -10V robustness of control and enable inputs provides crucial safety margin when driving pulse transformers 5A reverse output current robustness eliminates the need for Schottky switching diodes when driving MOSFETs in TO-220 and TO-247 packages Cool driver ICs thanks to true rail-to-rail low impedance output stages 4V and 8V UVLO (Under Voltage Lock Out) options for instant MOSFET protection during start-up and under abnormal conditions Potential Applications PFC Synchronous rectification DC-DC converters Telecom bricks Power tools Industrial SMPS Motor control Wireless charging Applications 1-phase string inverter solutions 48 V intermediate bus converter (IBC) Adapters and chargers DIN rail power supplies Uninterruptible power supplies (UPS) Designers who used this product also designed with FM25W256-G | F-RAM (Ferroelectric RAM) IPW65R029CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC070N10NS5SC | N-Channel Power MOSFET IPN80R4K5P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 2N7002DW | Small signal/small power MOSFET IMBF170R1K0M1 | Silicon Carbide MOSFET Discretes IRF7343 | Dual MOSFET F3L600R10W4S7F_C22 | IGBT modules IPZ65R045C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R031CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IDL06G65C5 | CoolSiC™ Schottky Diodes BSC040N10NS5SC | N-Channel Power MOSFET IDL12G65C5 | CoolSiC™ Schottky Diodes IPP65R095C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC070N10LS5 | N-Channel Power MOSFET IPP60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IHW20N135R5 | IGBT discretes BSP125 | Small signal/small power MOSFET FM25W256-G | F-RAM (Ferroelectric RAM) IPW65R029CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC070N10NS5SC | N-Channel Power MOSFET IPN80R4K5P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 2N7002DW | Small signal/small power MOSFET IMBF170R1K0M1 | Silicon Carbide MOSFET Discretes IRF7343 | Dual MOSFET F3L600R10W4S7F_C22 | IGBT modules 1 2 3 4 5
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Suppliers

Company
Product
Description
Supplier Links
Gate Driver ICs - 1EDN7512B - Infineon Technologies AG
Neubiberg, Germany
Gate Driver ICs
1EDN7512B
Gate Driver ICs 1EDN7512B
Rugged, cool and fast, 1-channel low-side 4/8A gate driver ICs 1-channel MOSFET gate driver ICs are the crucial link between control ICs and powerful MOSFET and GaN switching devices. Gate driver ICs enable high system level efficiencies, excellent power density and consistent system robustness. 1EDN family: Fast, precise, strong and compatible Highly efficient SMPS enabled by 5 ns short slew rates and ±5ns propagation delay precision for fast MOSFET and GaN switching Separate source and sink outputs simplify the application design Industry standard packages and pinout ease system design upgrades Summary of Features 1EDN family: The new reference in ruggedness and low power dissipation -10V robustness of control and enable inputs provides crucial safety margin when driving pulse transformers 5A reverse output current robustness eliminates the need for Schottky switching diodes when driving MOSFETs in TO-220 and TO-247 packages Cool driver ICs thanks to true rail-to-rail low impedance output stages 4V and 8V UVLO (Under Voltage Lock Out) options for instant MOSFET protection during start-up and under abnormal conditions Potential Applications PFC Synchronous rectification DC-DC converters Telecom bricks Power tools Industrial SMPS Motor control Wireless charging Applications 1-phase string inverter solutions 48 V intermediate bus converter (IBC) Adapters and chargers DIN rail power supplies Uninterruptible power supplies (UPS) Designers who used this product also designed with FM25W256-G | F-RAM (Ferroelectric RAM) IPW65R029CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC070N10NS5SC | N-Channel Power MOSFET IPN80R4K5P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 2N7002DW | Small signal/small power MOSFET IMBF170R1K0M1 | Silicon Carbide MOSFET Discretes IRF7343 | Dual MOSFET F3L600R10W4S7F_C22 | IGBT modules IPZ65R045C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW60R031CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IDL06G65C5 | CoolSiC™ Schottky Diodes BSC040N10NS5SC | N-Channel Power MOSFET IDL12G65C5 | CoolSiC™ Schottky Diodes IPP65R095C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC070N10LS5 | N-Channel Power MOSFET IPP60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IHW20N135R5 | IGBT discretes BSP125 | Small signal/small power MOSFET FM25W256-G | F-RAM (Ferroelectric RAM) IPW65R029CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC070N10NS5SC | N-Channel Power MOSFET IPN80R4K5P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 2N7002DW | Small signal/small power MOSFET IMBF170R1K0M1 | Silicon Carbide MOSFET Discretes IRF7343 | Dual MOSFET F3L600R10W4S7F_C22 | IGBT modules 1 2 3 4 5

Rugged, cool and fast, 1-channel low-side 4/8A gate driver ICs

1-channel MOSFET gate driver ICs are the crucial link between control ICs and powerful MOSFET and GaN switching devices. Gate driver ICs enable high system level efficiencies, excellent power density and consistent system robustness.

1EDN family: Fast, precise, strong and compatible

  • Highly efficient SMPS enabled by 5 ns short slew rates and ±5ns propagation delay precision for fast MOSFET and GaN switching
  • Separate source and sink outputs simplify the application design
  • Industry standard packages and pinout ease system design upgrades

Summary of Features

1EDN family: The new reference in ruggedness and low power dissipation

  • -10V robustness of control and enable inputs provides crucial safety margin when driving pulse transformers
  • 5A reverse output current robustness eliminates the need for Schottky switching diodes when driving MOSFETs in TO-220 and TO-247 packages
  • Cool driver ICs thanks to true rail-to-rail low impedance output stages
  • 4V and 8V UVLO (Under Voltage Lock Out) options for instant MOSFET protection during start-up and under abnormal conditions

Potential Applications

  • PFC
  • Synchronous rectification
  • DC-DC converters
  • Telecom bricks
  • Power tools
  • Industrial SMPS
  • Motor control
  • Wireless charging

Applications

  • 1-phase string inverter solutions
  • 48 V intermediate bus converter (IBC)
  • Adapters and chargers
  • DIN rail power supplies
  • Uninterruptible power supplies (UPS)

Designers who used this product also designed with


  • FM25W256-G |
    F-RAM (Ferroelectric RAM)
  • IPW65R029CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSC070N10NS5SC |
    N-Channel Power MOSFET
  • IPN80R4K5P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • 2N7002DW |
    Small signal/small power MOSFET
  • IMBF170R1K0M1 |
    Silicon Carbide MOSFET Discretes
  • IRF7343 |
    Dual MOSFET
  • F3L600R10W4S7F_C22 |
    IGBT modules
  • IPZ65R045C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPW60R031CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IDL06G65C5 |
    CoolSiC™ Schottky Diodes
  • BSC040N10NS5SC |
    N-Channel Power MOSFET
  • IDL12G65C5 |
    CoolSiC™ Schottky Diodes
  • IPP65R095C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSC070N10LS5 |
    N-Channel Power MOSFET
  • IPP60R022S7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IHW20N135R5 |
    IGBT discretes
  • BSP125 |
    Small signal/small power MOSFET
  • FM25W256-G |
    F-RAM (Ferroelectric RAM)
  • IPW65R029CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSC070N10NS5SC |
    N-Channel Power MOSFET
  • IPN80R4K5P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • 2N7002DW |
    Small signal/small power MOSFET
  • IMBF170R1K0M1 |
    Silicon Carbide MOSFET Discretes
  • IRF7343 |
    Dual MOSFET
  • F3L600R10W4S7F_C22 |
    IGBT modules

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Gate Drivers
Product Number 1EDN7512B
Product Name Gate Driver ICs
Driver Type Low-side
Output Current 4 amps
Supply Voltage 4.2 to 20 volts
Propagation Delay 19 ns
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