The S9119-01 is a silicon PIN photodiode for visible to near-infrared detection in a TO-18 package with a potted transparent epoxy resin. The photosensitive area measures 0.88 × 0.88 mm. It has a peak sensitivity wavelength of 920 nm and a spectral response range of 320 to 1060 nm. At 870 nm and 10 V reverse bias, the photosensitivity is 0.63 A/W, with a dark current of up to 1 nA at 25 °C. The terminal capacitance is 5 pF at 10 V and 1 MHz, and the cutoff frequency is 80 MHz under 830 nm illumination with a 50 Ω load. The device operates from -30 °C to +85 °C and withstands a maximum reverse voltage of 30 V. It exhibits wide directivity with a -3 dB angular width exceeding 70°.
Si PIN photodiode for visible to near infrared
The S9119-01 is a wide directional Si PIN photodiode in a TO-18 package with a potted transparent epoxy resin.
Features
- Resin potting type
- Low dark current
- Low capacitance, high-speed response
- Wide directivity
| Hamamatsu Photonics Europe | |
|---|---|
| Product Category | Photodiodes |
| Product Number | S9119-01 |
| Product Name | Si photodiodes |
| Photodiode Type | PIN Photodiode |
| Photodiode Spectral Response | Visible; IR |
| Spectral Response Range | 320 to 1060 nm (3200 to 10600 Å) |
| Peak Sensitivity Wavelength | 920 nm (9200 Å) |
| Photodiode Material | Silicon |
