The G12430-032D is a 32-element InGaAs PIN photodiode array in a 40-pin ceramic DIP package for near-infrared spectroscopy. Each element has a 0.2 mm × 1 mm active area with 0.25 mm pitch. Spectral response ranges from 0.9 to 1.7 µm with peak sensitivity at 1.55 µm. Photosensitivity is 0.95 A/W at 1.55 µm. Dark current is 250 pA at 1 V reverse bias. Terminal capacitance is 35 pF at 1 MHz. Cutoff frequency is 60 MHz at 1.3 µm and 50 Ω load. Reverse voltage must not exceed 5 V. Operating temperature is -20 to +70 °C. The borosilicate glass window is resin-sealed with no AR coating. Package size is 52.0 mm × 98.0 mm with 2.54 mm lead pitch.
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The G12430-032D is a 32-element InGaAs PIN photodiode array in a 40-pin ceramic DIP package for near-infrared spectroscopy. Each element has a 0.2 mm × 1 mm active area with 0.25 mm pitch. Spectral response ranges from 0.9 to 1.7 µm with peak sensitivity at 1.55 µm. Photosensitivity is 0.95 A/W at 1.55 µm. Dark current is 250 pA at 1 V reverse bias. Terminal capacitance is 35 pF at 1 MHz. Cutoff frequency is 60 MHz at 1.3 µm and 50 Ω load. Reverse voltage must not exceed 5 V. Operating temperature is -20 to +70 °C. The borosilicate glass window is resin-sealed with no AR coating. Package size is 52.0 mm × 98.0 mm with 2.54 mm lead pitch.
