Hamamatsu Photonics Europe InGaAs APDs G8931-20

Description
High-speed response InGaAs APD The G8931 series are InGaAs APDs used for distance measurement, optical communication, and low-light-level detection. The G8931-20 features a large photosensitive area. (φ0.2 mm) Features - Large photosensitive area: φ0.2 mm - Low dark current - Low capacitance - High sensitivity
Request a Quote
Description
High-speed response InGaAs APD The G8931 series are InGaAs APDs used for distance measurement, optical communication, and low-light-level detection. The G8931-20 features a large photosensitive area. (φ0.2 mm) Features - Large photosensitive area: φ0.2 mm - Low dark current - Low capacitance - High sensitivity
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The G8931-20 is an InGaAs avalanche photodiode designed for distance measurement, optical communication, and low-light-level detection, featuring a 0.2 mm diameter photosensitive area and housed in a TO-18 package with a borosilicate glass window AR-coated for 1.55 µm. It operates with a spectral response range of 0.95 to 1.7 µm, peaking at 1.55 µm, and provides a typical gain of 30 at 1 µA photocurrent. The device has a breakdown voltage range of 40 to 60 V, a terminal capacitance of up to 2 pF at 90% of breakdown voltage, and a dark current of up to 200 nA at 90% of breakdown voltage. Its operating temperature range is -40 to +85 °C, with a storage temperature range of -55 to +125 °C. The breakdown voltage has a temperature coefficient of 0.11 V/°C.

Datasheet Summary
Powered by GS/AI

The G8931-20 is an InGaAs avalanche photodiode designed for distance measurement, optical communication, and low-light-level detection, featuring a 0.2 mm diameter photosensitive area and housed in a TO-18 package with a borosilicate glass window AR-coated for 1.55 µm. It operates with a spectral response range of 0.95 to 1.7 µm, peaking at 1.55 µm, and provides a typical gain of 30 at 1 µA photocurrent. The device has a breakdown voltage range of 40 to 60 V, a terminal capacitance of up to 2 pF at 90% of breakdown voltage, and a dark current of up to 200 nA at 90% of breakdown voltage. Its operating temperature range is -40 to +85 °C, with a storage temperature range of -55 to +125 °C. The breakdown voltage has a temperature coefficient of 0.11 V/°C.

Suppliers

Company
Product
Description
Supplier Links
InGaAs APDs - G8931-20 - Hamamatsu Photonics Europe
Herrsching am Ammersee, Germany
InGaAs APDs
G8931-20
InGaAs APDs G8931-20
High-speed response InGaAs APD The G8931 series are InGaAs APDs used for distance measurement, optical communication, and low-light-level detection. The G8931-20 features a large photosensitive area. (φ0.2 mm) Features - Large photosensitive area: φ0.2 mm - Low dark current - Low capacitance - High sensitivity

High-speed response InGaAs APD

The G8931 series are InGaAs APDs used for distance measurement, optical communication, and low-light-level detection.
The G8931-20 features a large photosensitive area. (φ0.2 mm)

Features
- Large photosensitive area: φ0.2 mm
- Low dark current
- Low capacitance
- High sensitivity

Supplier's Site Datasheet

Technical Specifications

  Hamamatsu Photonics Europe
Product Category Photodiodes
Product Number G8931-20
Product Name InGaAs APDs
Photodiode Type Avalanche Photodiode
Spectral Response Range 950 to 1700 nm (9500 to 17000 Å)
Peak Sensitivity Wavelength 1550 nm (15500 Å)
Photodiode Material Indium Gallium Arsenide
Unlock Full Specs
to access all available technical data

Similar Products

Si photodiodes - S8745-06 - Hamamatsu Photonics Europe
Hamamatsu Photonics Europe
Specs
Spectral Response Range 340 to 1100 nm (3400 to 11000 Å)
Peak Sensitivity Wavelength 960 nm (9600 Å)
Photodiode Material Silicon
View Details
2 suppliers
Linear InGaAs photodiode arrays - G7151-16 - Hamamatsu Photonics Europe
Specs
Spectral Response Range 900 to 1700 nm (9000 to 17000 Å)
Peak Sensitivity Wavelength 1550 nm (15500 Å)
Photodiode Material Indium Gallium Arsenide
View Details
InGaAs photodiodes - G14942-32 - Hamamatsu Photonics Europe
Hamamatsu Photonics Europe
Specs
Photodiode Type PIN Photodiode
Spectral Response Range 900 to 1700 nm (9000 to 17000 Å)
Peak Sensitivity Wavelength 1550 nm (15500 Å)
View Details
APD modules - C12702-04 - Hamamatsu Photonics Europe
Hamamatsu Photonics Europe
Specs
Photodiode Type Avalanche Photodiode
Active Area Diameter or Length 3 mm (0.1181 inch)
View Details